Solid state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
The present technique aims to provide a solid-state imaging device that reduces shading and color mixing between pixels. The present invention also provides a method of manufacturing the solid-state imaging device. The present technique further relates to a solid-state imaging device that enables provision of an electronic apparatus that uses the solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a substrate, pixels each including a photoelectric conversion unit formed in the substrate, and a color filter layer formed on the light incidence surface side of the substrate. The solid-state imaging device also includes a device isolating portion that is formed to divide the color filter layer and the substrate for the respective pixels, and has a lower refractive index than the refractive indexes of the color filter layer and the substrate.
1. An imaging device comprising:
a semiconductor substrate;
a first photoelectric conversion region disposed in the semiconductor substrate;
a second photoelectric conversion region adjacent to the first photoelectric conversion region and disposed in the semiconductor substrate;
a first color filter disposed over the first photoelectric conversion region;
a second color filter disposed over the second photoelectric conversion region; and
an insulating film disposed between the first and second photoelectric conversion regions and between the first and second color filters.
2. The imaging device of claim 1 , wherein the insulating film comprises a first film and a second film.
3. The imaging device of claim 2 , wherein the second film is on sidewalls of the first film.
4. The imaging device of claim 3 , wherein the first film has a lower refractive index that the second film.
5. The imaging device of claim 4 , wherein the first film has a lower refractive index than the semiconductor substrate and the first and second color filters.
6. The imaging device of claim 3 , wherein the second film has a lower refractive index than the first and second color filters.
7. The imaging device of claim 2 , wherein the first film contacts the first and second color filters.
8. The imaging device of claim 3 , further comprising:
a metal film, wherein the first film is on sidewalls of the metal film.
9. The imaging device of claim 8 , further comprising:
a light absorbing material on the metal film and between the first and second color filters.
10. The imaging device of claim 9 , wherein the first and second color filters contact the light absorbing material.
11. The imaging device of claim 8 , wherein the metal film comprises Al or W.
12. An imaging device comprising:
a semiconductor substrate;
a first photoelectric conversion region disposed in the semiconductor substrate;
a second photoelectric conversion region adjacent to the first photoelectric conversion region and disposed in the semiconductor substrate;
a first color filter disposed over the first photoelectric conversion region;
a second color filter disposed over the second photoelectric conversion region; and
a metal film disposed between the first and second photoelectric conversion regions and between the first and second color filters.
13. The imaging device of claim 12 , further comprising:
a first film on sidewalls of the metal film.
14. The imaging device of claim 13 , further comprising:
a second film on sidewalls of the first film.
15. The imaging device of claim 14 , wherein the first film has a lower refractive index that the second film.
16. The imaging device of claim 15 , wherein the first film has a lower refractive index than the semiconductor substrate and the first and second color filters.
17. The imaging device of claim 14 , wherein the second film has a lower refractive index than the first and second color filters.
18. The imaging device of claim 12 , further comprising:
a light absorbing material on the metal film and between the first and second color filters.
19. The imaging device of claim 18 , wherein the first and second color filters contact the light absorbing material.
20. The imaging device of claim 12 , wherein the metal film comprises Al or W.