Plasma processing apparatus
A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including an electrostatic chuck; a first ring disposed on the electrostatic chuck to surround a substrate on the electrostatic chuck and including an inner annular portion, an intermediate annular portion, and an outer annular portion, a top surface of the inner annular portion being higher than that of the intermediate annular portion, a top surface of the outer annular portion being higher than that of the inner annular portion; a second ring disposed on the intermediate annular portion; and an actuator configured to vertically move the second ring to maintain a top surface of the second ring at a first height greater than a height of the top surface of the inner annular portion and less than a height of the top surface of the outer annular portion.
1. A plasma processing apparatus comprising:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber, the substrate support including an electrostatic chuck;
a first ring disposed on the electrostatic chuck so as to surround a substrate to be disposed on the electrostatic chuck, the first ring including an inner annular portion, an intermediate annular portion, and an outer annular portion, a top surface of the inner annular portion being higher than a top surface of the intermediate annular portion, a top surface of the outer annular portion being higher than the top surface of the inner annular portion;
a second ring disposed on the top surface of the intermediate annular portion of the first ring and having a thickness equal to or less than the intermediate annular portion, wherein a top surface of the second ring is positioned at a first height and the first height is greater than a height of the top surface of the inner annular portion of the first ring and is less than a height of the top surface of the outer annular portion of the first ring; and
an actuator configured to vertically move the second ring so as to maintain the top surface of the second ring at the first height.
2. The plasma processing apparatus set forth in claim 1 ,
wherein a width of the second ring is equal to or less than a width of the intermediate annular portion of the first ring.
3. The plasma processing apparatus set forth in claim 1 ,
wherein the first ring and the second ring comprise silicon or silicon carbide.
4. The plasma processing apparatus set forth in claim 3 , further comprising:
a cover ring disposed so as to surround the first ring, the cover ring being composed of an insulating material.