Variable depth edge ring for etch uniformity control
A substrate support includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller that calculates a desired pocket depth of the substrate support. Pocket depth corresponds to a distance between an upper surface of the edge ring and an upper surface of the substrate. Based on the desired pocket depth, the controller selectively controls an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.
1. A substrate support, comprising:
an inner portion arranged to support a substrate;
an edge ring surrounding the inner portion; and
a controller configured to
calculate a desired pocket depth of the substrate support using data indicative of a relationship between the desired pocket depth and at least one process parameter, wherein the desired pocket depth corresponds to a desired distance between an upper surface of the edge ring and an upper surface of the substrate, and
based on the desired pocket depth as calculated, selectively control an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.
2. The substrate support of claim 1 , wherein the edge ring is arranged on an outer portion of the substrate support and, to raise and lower the edge ring, the controller controls the actuator to raise and lower the outer portion.
3. The substrate support of claim 1 , wherein the edge ring includes an inner ring portion that is moveable independently of the edge ring.
4. The substrate support of claim 1 , wherein the inner portion corresponds to an electrostatic chuck.
5. The substrate support of claim 1 , wherein the actuator raises and lowers the at least one of the edge ring and the inner portion using one or more actuator pins.
6. The substrate support of claim 1 , wherein the controller calculates the desired pocket depth based on the at least one process parameter, wherein the at least one process parameter includes at least one of (i) a selected recipe or process to be performed on the substrate, (ii) characteristics of a processing chamber, (iii) a thickness of the substrate, (iv) a desired gas velocity profile, and (v) a desired etch uniformity.
7. The substrate support of claim 6 , wherein the controller includes a pocket depth calculation module that receives at least one input indicative of the at least one process parameter and calculates the desired pocket depth based on the input.
8. The substrate support of claim 7 , further comprising a memory that stores the data indicative of the relationship between the at least one process parameter and the desired pocket depth.
9. The substrate support of claim 8 , wherein the pocket depth calculation module (i) retrieves the data from the memory based on the input and (ii) calculates the desired pocket depth based on the retrieved data.
10. The substrate support of claim 9 , wherein the pocket depth calculation module calculates the desired pocket depth further based on at least one of a model and a lookup table stored in the memory.