Data storage device and method for memory operation and iterative polling
A controller of the data storage system may poll a non-volatile memory component to determine an operational status of the non-volatile memory component after a memory operation has been initiated in the non-volatile memory component. The controller may, in response to determining the operational status of the non-volatile memory component is busy, update a polling interval based on a polling factor. The controller may re-poll the non-volatile memory component to determine the operational status of the non-volatile memory component after expiration of the updated polling interval. The controller may repeat the updating of the polling interval and the re-polling of the non-volatile memory component until the operational status of the non-volatile memory component is determined to be ready or until a predetermined number of iterations of the updating and re-polling have been performed if, in response to the re-polling, the operational status is determined to be busy.
1. A method for a data storage system, comprising:
initiating a memory operation in a non-volatile memory component;
polling the non-volatile memory component;
determining an operational status of the non-volatile memory component based on the polling; and
when the operational status of the non-volatile memory component is busy, or until a predetermined number of processes has occurred, performing one or more of the processes, wherein each of the processes comprises: altering a polling interval based on a polling factor wherein the polling factor is based on a distribution of memory operation completion times; re-polling the non-volatile memory component; and determining the operational status of the non-volatile memory component based on the re-polling.
2. The method of claim 1 , comprising: determining that the altered polling interval meets a polling interval threshold, wherein the re-polling of the non-volatile memory component is repeated without altering the polling interval in response to determining that the altered polling interval meets the polling interval threshold.
3. The method of claim 1 , wherein the processes comprise iterations.
4. The method of claim 1 , comprising: altering a data table to indicate an iteration of re-polling in response to which the operational status of the non-volatile memory component is determined to be ready, wherein the distribution of memory operation completion times is based on the data table.
5. The method of claim 1 , wherein the altering the polling interval comprises altering the polling interval in response to determining that the operational status of the non-volatile memory component is busy.
6. The method of claim 1 , comprising: determining whether a waiting period has lapsed after the memory operation has been initiated in the non-volatile memory component, wherein the non-volatile memory component is polled after the waiting period has lapsed.
7. The method of claim 6 , wherein the waiting period is greater than the polling interval.
8. A data storage system, comprising:
a non-volatile memory component; and
one or more controllers configured to cause:
initiating a memory operation in the non-volatile memory component;
polling the non-volatile memory component;
determining an operational status of the non-volatile memory component based on the polling; and
when the operational status of the non-volatile memory component is busy, or until a predetermined number of processes has occurred, performing one or more of the processes, wherein each of the processes comprises: altering a polling interval based on a polling factor wherein the polling factor is based on a distribution of memory operation completion times; re-polling the non-volatile memory component; and determining the operational status of the non-volatile memory component based on the re-polling.
9. The data storage system of claim 8 , wherein the one or more controllers are configured to cause: determining that the altered polling interval meets a polling interval threshold, wherein the re-polling of the non-volatile memory component is repeated without altering the polling interval in response to determining that the altered polling interval meets the polling interval threshold.
10. The data storage system of claim 8 , wherein the processes comprise iterations.
11. The data storage system of claim 8 , wherein the one or more controllers are configured to cause: altering a data table to indicate an iteration of re-polling in response to which the operational status of the non-volatile memory component is determined to be ready, wherein the distribution of memory operation completion times is based on the data table.
12. The data storage system of claim 8 , wherein the altering the polling interval comprises altering the polling interval in response to determining that the operational status of the non-volatile memory component is busy.
13. The data storage system of claim 8 , wherein the one or more controllers are configured to cause: determining whether a waiting period has lapsed after the memory operation has been initiated in the non-volatile memory component; and polling the non-volatile memory component after the waiting period has lapsed.
14. An apparatus, comprising:
means for initiating a memory operation in a non-volatile memory component;
means for polling the non-volatile memory component;
means for determining an operational status of the non-volatile memory component based on the polling; and
when the operational status of the non-volatile memory component is busy, or until a predetermined number of processes has occurred, means for performing one or more of the processes, wherein each of the processes comprises: altering a polling interval based on a polling factor wherein the polling factor is based on a distribution of memory operation completion times; re-polling the non-volatile memory component; and determining the operational status of the non-volatile memory component based on the re-polling.
15. The apparatus of claim 14 , comprising: means for determining that the altered polling interval meets a polling interval threshold, wherein the re-polling of the non-volatile memory component is repeated without altering the polling interval in response to determining that the altered polling interval meets the polling interval threshold.