Data storage systems and methods for improved data relocation based on read-level voltages associated with error recovery
Apparatus, media, methods, and systems are disclosed for improved data relocation based on read-level voltages. A data storage system may include a non-volatile memory device including a source region and a destination region. The destination region may include a first destination block and a second destination block. A controller may read first data in the source region using a first read-level voltage, and read second data in the source region using a second read-level voltage. The controller may associate, based on the first and second read-level voltages, each of the first data and the second data with a respective one of the first and the second destination blocks. The controller may cause each of the first and second data to be stored in the associated one of the first and second destination blocks.
1. A computer-implemented method for a data storage system, the method comprising:
when first data from a source region is successfully read using a first voltage, associating an identifier of the first data with a first relocation buffer associated with a first destination block, and relocating the first data to the first destination block;
when second data from the source region is successfully read using a second voltage, associating an identifier of the second data with a second relocation buffer associated with a second destination block, and relocating the second data to the second destination block; and
when third data from the source region is successfully read using a third voltage, associating an identifier of the third data with the first or the second relocation buffer, depending on occupancy levels of the first and second relocation buffers associated with the first and second destination blocks respectively, and relocating the third data to one of the first and second relocation buffers, depending on the association of the identifier of the third data with the first or the second relocation buffer respectively,
wherein:
the first voltage is less than the third voltage, and the third voltage is less than the second voltage; and
the first voltage is designated to the first destination block, the second voltage is designated to the second destination block, and the third voltage is not designated to any of the first or second destination block.
2. The computer-implemented method of claim 1 , wherein:
the first and second destination blocks are pre-designated to the first and second voltages, respectively, prior to reading the first and second data;
the first and second destination blocks are pre-designated to a first program-erase cycle count and a second program-erase cycle count, respectively, prior to reading the first and second data, wherein the first program-erase cycle count is greater than the second program-erase cycle count;
prior to successfully reading any data from the source region using the first voltage, all data successfully read from first and second source blocks of the source region using the first voltage, are predetermined and required to be relocated to the first destination block; and
prior to successfully reading any data from the source region using the second voltage, all data successfully read from the first and second source blocks of the source region using the second voltage, are predetermined and required to be relocated to the second destination block.
3. The computer-implemented method of claim 2 , wherein the first and second destination blocks are pre-designated to the first and second relocation buffers, respectively, prior to reading the first and second data.
4. The computer-implemented method of claim 1 , wherein:
the data storage system comprises: the source region having a first source block and a second source block different from the first source block; a destination region having the first destination block and the second destination block different from the first destination block; and a relocation region having the first relocation buffer and the second relocation buffer different from the first relocation buffer; and
the data storage system comprises non-volatile memory device including the source region and the destination region.
5. The computer-implemented method of claim 1 , wherein:
when a data is unsuccessfully read using the third voltage, occupancy levels of the first and second relocation buffers for relocating the data are not determined;
when the first data is successfully read using the first voltage, occupancy levels of the first and second relocation buffers for relocating the first data are not determined, and
when the second data is successfully read using the second voltage, occupancy levels of the first and second relocation buffers for relocating the second data are not determined.
6. The computer-implemented method of claim 1 , wherein a destination region, having the first and second destination blocks, is logically grouped into the first and second destination blocks predetermined based on program-erase cycle counts.
7. The computer-implemented method of claim 1 , wherein the third voltage is a read-level voltage determined based on a program-erase cycle count of a non-volatile memory device including a destination region having the first and second destination blocks.
8. The computer-implemented method of claim 1 , comprising:
reading a first one of a plurality of code words using the third voltage, wherein the plurality of code words are included in one of a logical pages included in the source region;
reading a second one of the plurality of code words using a fourth voltage that is different from the third voltage; and
storing the first and second ones of the plurality of code words to a same one of the first and second destination blocks, based on occupancy levels of the first and second relocation buffers associated with the first and second destination blocks.
9. The computer-implemented method of claim 1 , wherein:
the data storage system comprises the first relocation buffer associated with the first destination block and the second relocation buffer associated with the second destination block; and
the one of the first and second relocation buffers, for relocating the third data, has a smaller amount of unoccupied data space than the other one of the first and second relocation buffers.
10. The computer-implemented method of claim 1 , wherein:
prior to successfully reading any data from the source region using the first voltage, all data successfully read from any source blocks of the source region using the first voltage are predetermined and required to be relocated to the first destination block and not to the second destination block, regardless of occupancy levels of the first and second relocation buffers associated with the first and second destination blocks respectively; and
prior to successfully reading any data from the source region using the second voltage, all data successfully read from any source blocks of the source region using the second voltage are predetermined and required to be relocated to the second destination block and not to the first destination block, regardless of occupancy levels of the first and second relocation buffers associated with the first and second destination blocks respectively.
11. A data storage system, comprising:
memory comprising a source region and a destination region having a first destination block and a second destination block; and
one or more controllers configured to cause:
when first data from the source region is successfully read using a first voltage, associating an identifier of the first data with a first relocation buffer associated with the first destination block, and relocating the first data to the first destination block;
when second data from the source region is successfully read using a second voltage, associating an identifier of the second data with a second relocation buffer associated with the second destination block, and relocating the second data to the second destination block; and
when third data from the source region is successfully read using a third voltage, associating an identifier of the third data with the first or the second relocation buffer, depending on occupancy levels of the first and second relocation buffers associated with the first and second destination blocks respectively, and relocating the third data to one of the first and second relocation buffers, depending on the association of the identifier of the third data with the first or the second relocation buffer respectively,
wherein:
the first voltage is less than the third voltage, and the third voltage is less than the second voltage; and
the first voltage is designated to the first destination block, the second voltage is designated to the second destination block, and the third voltage is not designated to any of the first or second destination block.
12. The data storage system of claim 11 , wherein:
the first and second destination blocks are pre-designated to the first and second voltages, respectively, prior to reading the first and second data;
the first and second destination blocks are pre-designated to a first program-erase cycle count and a second program-erase cycle count, respectively, prior to reading the first and second data, wherein the first program-erase cycle count is greater than the second program-erase cycle count;
prior to successfully reading any data from the source region using the first voltage, all data successfully read from first and second source blocks of the source region using the first voltage, are predetermined and required to be relocated to the first destination block; and
prior to successfully reading any data from the source region using the second voltage, all data successfully read from the first and second source blocks of the source region using the second voltage, are predetermined and required to be relocated to the second destination block.
13. The data storage system of claim 12 , wherein the first and second destination blocks are pre-designated to the first and second relocation buffers, respectively, prior to reading the first and second data.
14. The data storage system of claim 11 , wherein the one or more controllers are configured to cause:
when a data is unsuccessfully read using the third voltage, not determining occupancy levels of the first and second relocation buffers for relocating the data;
when the first data is successfully read using the first voltage, not determining occupancy levels of the first and second relocation buffers for relocating the first data, and
when the second data is successfully read using the second voltage, not determining occupancy levels of the first and second relocation buffers for relocating the second data.
15. The data storage system of claim 11 , wherein the third voltage is a read-level voltage determined based on a program-erase cycle count of memory including the destination region.
16. The data storage system of claim 11 , wherein:
prior to successfully reading any data from the source region using the first voltage, all data successfully read from any source blocks of the source region using the first voltage are predetermined and required to be relocated to the first destination block and not to the second destination block, regardless of occupancy levels of the first and second relocation buffers associated with the first and second destination blocks respectively; and
prior to successfully reading any data from the source region using the second voltage, all data successfully read from any source blocks of the source region using the second voltage are predetermined and required to be relocated to the second destination block and not to the first destination block, regardless of occupancy levels of the first and second relocation buffers associated with the first and second destination blocks respectively.
17. An apparatus, comprising:
when first data from a source region is successfully read using a first voltage, means for associating an identifier of the first data with a first relocation buffer associated with a first destination block, and relocating the first data to the first destination block;
when second data from the source region is successfully read using a second voltage, means for associating an identifier of the second data with a second relocation buffer associated with a second destination block, and relocating the second data to the second destination block; and
when third data from the source region is successfully read using a third voltage, means for associating an identifier of the third data with the first or the second relocation buffer, depending on occupancy levels of the first and second relocation buffers associated with the first and second destination blocks respectively, and relocating the third data to one of the first and second relocation buffers, depending on the association of the identifier of the third data with the first or the second relocation buffer respectively,
wherein:
the first voltage is less than the third voltage, and the third voltage is less than the second voltage; and
the first voltage is designated to the first destination block, the second voltage is designated to the second destination block, and the third voltage is not designated to any of the first or second destination block.
18. The apparatus of claim 17 , wherein:
the first and second destination blocks are pre-designated to the first and second voltages, respectively, prior to reading the first and second data;
the first and second destination blocks are pre-designated to a first program-erase cycle count and a second program-erase cycle count, respectively, prior to reading the first and second data, wherein the first program-erase cycle count is greater than the second program-erase cycle count;
prior to successfully reading any data from the source region using the first voltage, all data successfully read from first and second source blocks of the source region using the first voltage, are predetermined and required to be relocated to the first destination block; and
prior to successfully reading any data from the source region using the second voltage, all data successfully read from the first and second source blocks of the source region using the second voltage, are predetermined and required to be relocated to the second destination block.
19. The apparatus of claim 17 , wherein:
when a data is unsuccessfully read using the third voltage, occupancy levels of the first and second relocation buffers for relocating the data are not determined;
when the first data is successfully read using the first voltage, occupancy levels of the first and second relocation buffers for relocating the first data are not determined, and
when the second data is successfully read using the second voltage, occupancy levels of the first and second relocation buffers for relocating the second data are not determined.
20. The apparatus of claim 17 , wherein:
prior to successfully reading any data from the source region using the first voltage, all data successfully read from any source blocks of the source region using the first voltage are predetermined and required to be relocated to the first destination block and not to the second destination block, regardless of occupancy levels of the first and second relocation buffers associated with the first and second destination blocks respectively; and
prior to successfully reading any data from the source region using the second voltage, all data successfully read from any source blocks of the source region using the second voltage are predetermined and required to be relocated to the second destination block and not to the first destination block, regardless of occupancy levels of the first and second relocation buffers associated with the first and second destination blocks respectively.