Reflective mask blank for EUV lithography, mask blank for EUV lithography, and manufacturing methods thereof

1. A reflective mask blank for EUV lithography, comprising: a substrate;

a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order,

wherein the phase shift film comprises a layer 1 comprising ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N), and

wherein among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.

2. The reflective mask blank for EUV lithography according to claim 1 ,

wherein the layer 1 comprises from 40 to 99 at % of Ru and from 1 to 60 at % of O, or comprises from 30 to 98 at % of Ru, from 1 to 69 at % of O, and from 1 to 69 at % of N.

3. The reflective mask blank for EUV lithography according to claim 1 ,

wherein the layer 1 comprises from 30 to 98 at % of Ru and from 2 to 70 at % of N.

4. The reflective mask blank for EUV lithography according to claim 2 ,

wherein the layer 1 further comprises at least one element (X) selected from the group consisting of chromium (Cr), tantalum (Ta), titanium (Ti), rhenium (Re), tungsten (W), bismuth (Bi), manganese (Mn), platinum (Pt), copper (Cu), iridium (Ir), and vanadium (V) in a range of 20:1 to 1:5 in terms of a composition ratio (at %) (Ru:X) of Ru to X, and

wherein the layer 1 comprises from 40 to 99 at % of a total (Ru+X) of Ru and X and from 1 to 60 at % of O, or comprises 30 to 98 at % of a total (Ru+X) of Ru and X, from 1 to 69 at % of O, and from 1 to 69 at % of N.

5. The reflective mask blank for EUV lithography according to claim 3 ,

wherein the layer 1 further comprises at least one element (X) selected from the group consisting of Cr, Ta, Ti, Re, W, Bi, Mn, Pt, Cu, Ir, and V in a range of 20:1 to 1:5 in terms of a composition ratio (at %) (Ru:X) of Ru to X, and

wherein the layer 1 comprises from 30 to 90 at % of a total (Ru+X) of Ru and X and from 10 to 70 at % of N.

6. The reflective mask blank for EUV lithography according to claim 1 ,

wherein the phase shift film further comprises a layer 2 comprising at least one element (X) selected from the group consisting of Cr, Ta, Ti, Re, W, Bi, Mn, Pt, Cu, Ir, and V.

7. The reflective mask blank for EUV lithography according to claim 6 ,

wherein the layer 2 further comprises at least one element selected from the group consisting of O, N, boron (B), and carbon (C).

8. The reflective mask blank for EUV lithography according to claim 1 ,

wherein the phase shift film has a thickness of from 20 nm to 60 nm.

9. The reflective mask blank for EUV lithography according to claim 1 ,

wherein the layer 1 has a thickness of 10 nm or more.

10. The reflective mask blank for EUV lithography according to claim 1 ,

wherein a phase difference between a reflected light of EUV light from the multilayer reflective film and a reflected light of EUV light from the phase shift film is from 150° to 250°, and

wherein a relative reflectance between an EUV light ray reflectance on a surface of the phase shift film and an EUV light ray reflectance on a surface of the multilayer reflective film ((EUV light ray reflectance on phase shift film surface/EUV light ray reflectance on multilayer reflective film surface)×100) is from 2% to 37%.

11. The reflective mask blank for EUV lithography according to claim 1 , comprising a protective film for the multilayer reflective film formed between the multilayer reflective film and the phase shift film.

12. The reflective mask blank for EUV lithography according to claim 11 ,

wherein the protective film comprises at least one element selected from the group consisting of Ru, palladium (Pd), Ir, rhodium (Rh), Pt, zirconium (Zr), niobium (Nb), Ta, Ti, and silicon (Si).

13. The reflective mask blank for EUV lithography according to claim 12 ,

wherein the protective film further comprises at least one element selected from the group consisting of O, N, and B.

14. The reflective mask blank for EUV lithography according to claim 1 , comprising an etching mask film on the phase shift film,

wherein the etching mask film comprises at least one element selected from the group consisting of Nb, Ti, molybdenum (Mo), Ta, and Si.

15. The reflective mask blank for EUV lithography according to claim 14 ,

wherein the etching mask film further comprises at least one element selected from the group consisting of O, N, and B.

16. A reflective mask for EUV lithography, obtained by forming a pattern in the phase shift film of the reflective mask blank for EUV lithography according to claim 1 .

17. A method for manufacturing a reflective mask blank for EUV lithography, comprising:

forming, on a substrate, a multilayer reflective film for reflecting EUV light;

forming, on the multilayer reflective film, a phase shift film for shifting a phase of EUV light; and

forming an etching mask film on the phase shift film,

wherein the phase shift film comprises a layer 1 comprising ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N),

wherein among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having a highest intensity has a half value width FWHM of 1.0° or more, and

wherein the etching mask film is removable by cleaning with an acid or a base.

18. A method for manufacturing a reflective mask for EUV lithography, comprising forming a pattern by patterning the phase shift film in the reflective mask blank for EUV lithography manufactured by the manufacturing method of a reflective mask blank for EUV lithography according to claim 17 .