Memory system component that enables clock-to-strobe skew compensation
An integrated circuit device outputs a sequence of differently delayed calibration data timing signals to a DRAM component via a data-signal timing line as part of a timing calibration operation and then stores a delay value, based on at least one of the calibration data timing signals, that compensates for a difference in signal propagation times over the data-signal timing line and a command/address-signal timing line. After the timing calibration operation, the integrated circuit device outputs write data to the DRAM component and outputs a write data timing signal, delayed according to the delay value, to via the data-signal timing line to time reception of the first write data within the DRAM.
1. An integrated circuit device comprising:
a clock signal driver to output a clock signal to a dynamic random access memory device (DRAM) via a clock signal line; and
a data timing signal driver to output to the DRAM via a data timing signal line:
a sequence of calibration data timing signals having respective phase offsets relative to the clock signal to enable, during a timing calibration operation, identification of a phase offset of one of the calibration data timing signals that compensates for a difference in signal propagation times over the clock signal line and data timing signal line; and
during a memory write operation, a write data timing signal having the identified phase offset.
2. The integrated circuit device of claim 1 wherein the identified phase offset provides increased write data timing margin relative to phase offsets of others of the calibration data timing signals.
3. The integrated circuit device of claim 1 wherein the one of the calibration data timing signals having the identified phase offset arrives at the DRAM with less skew relative to arrival of the clock signal at the DRAM than others of the calibration data timing signals.
4. The integrated circuit device of claim 1 wherein the data timing signal driver to output the sequence of calibration data timing signals having respective phase offsets relative to the clock signal comprises a chain of delay elements and circuitry to select, during each of a sequence of time intervals that transpires during the timing calibration operation, an output of a respective delay element within the chain of delay elements and circuitry to transmit the output of the respective delay element onto the data timing signal line.
5. The integrated circuit device of claim 1 further comprising signaling circuitry to effect a sequence of dummy write operations within the DRAM as part of the timing calibration operation and wherein the data timing signal driver to output the sequence of calibration data timing signals to the DRAM via the data timing signal line during the timing calibration operation comprises circuitry to output each of the calibration data timing signals to the DRAM via the data timing signal line as part of a respective one of the dummy write operations.
6. The integrated circuit device of claim 5 further comprising signaling circuitry to effect, during the timing calibration operation, a sequence of memory read operations within the DRAM corresponding to the sequence of dummy write operations, and circuitry to determine, based on information obtained via the sequence of memory read operations, which calibration data timing signals within the sequence of calibration data timing signals enabled successful completion of the dummy write operations.
7. The integrated circuit device of claim 6 further comprising circuitry to identify the phase offset that compensates for the difference in signal propagation times over the clock signal line and data timing signal line based at least in part on the determination of which calibration data timing signals within the sequence of calibration data timing signals enabled successful completion of the dummy write operations.
8. The integrated circuit device of claim 1 further comprising a data signal driver to output a data signal to the DRAM during the memory write operation at a time indicated by the one of the calibration data timing signals having the identified phase offset.
9. The integrated circuit device of claim 1 wherein the data timing signal driver to output the sequence of calibration data timing signals having respective phase offsets relative to the clock signal comprises circuitry to output a sequence of calibration data timing signals having respective phase offsets that collectively span an interval equal to or greater than a period of the clock signal.
10. A method of operation within an integrated circuit device, the method comprising:
outputting a clock signal to a dynamic random access memory device (DRAM) via a clock signal line; and
outputting to the DRAM, via a data timing signal line and during a timing calibration operation, a sequence of calibration data timing signals having respective phase offsets relative to the clock signal to enable identification of a phase offset of one of the calibration data timing signals that compensates for a difference in signal propagation times over the clock signal line and data timing signal line; and
outputting to the DRAM, via the data timing signal line and during a memory write operation, a write data timing signal having the identified phase offset.
11. The method of claim 10 wherein the identified phase offset provides increased write data timing margin relative to phase offsets of others of the calibration data timing signals.
12. The method of claim 10 wherein the one of the calibration data timing signals having the identified phase offset arrives at the DRAM with less skew relative to arrival of the clock signal at the DRAM than others of the calibration data timing signals.
13. The method of claim 10 wherein outputting the sequence of calibration data timing signals having respective phase offsets relative to the clock signal comprises selecting, during each of a sequence of time intervals that transpires during the timing calibration operation, an output of a respective delay element within a chain of delay elements and transmitting the output of the respective delay element onto the data timing signal line.
14. The method of claim 10 further comprising outputting signals to perform a sequence of dummy write operations as part of the timing calibration operation and wherein outputting the sequence of calibration data timing signals to the DRAM via the data timing signal line during the timing calibration operation comprises outputting each of the calibration data timing signals to the DRAM via the data timing signal line as part of a respective one of the dummy write operations.
15. The method of claim 14 further comprising determining, through execution of memory read operations directed to the DRAM during the timing calibration operation, which calibration data timing signals within the sequence of calibration data timing signals enabled successful completion of the dummy write operations.
16. The method of claim 15 further comprising identifying the phase offset that compensates for the difference in signal propagation times over the clock signal line and data timing signal line based at least in part on the determination of which calibration data timing signals within the sequence of calibration data timing signals enabled successful completion of the dummy write operations.
17. The method of claim 10 further comprising outputting a data signal to the DRAM during the memory write operation at a time indicated by the one of the calibration data timing signals having the identified phase offset.
18. The method of claim 10 wherein outputting the sequence of calibration data timing signals having respective phase offsets relative to the clock signal comprises outputting a sequence of calibration data timing signals having respective phase offsets that collectively span an interval equal to or greater than a period of the clock signal.
19. The method of claim 10 wherein outputting the sequence of calibration data timing signals having respective phase offsets relative to the clock signal comprises outputting a sequence of calibration data timing signals having respective phase offsets temporally staggered relative to one another by a predetermined fraction of a period of the clock signal.
20. An integrated circuit device comprising:
means for outputting a clock signal to a dynamic random access memory device (DRAM) via a clock signal line; and
means for outputting to the DRAM, via a data timing signal line and during a timing calibration operation, a sequence of calibration data timing signals having respective phase offsets relative to the clock signal to enable identification of a phase offset of one of the calibration data timing signals that compensates for a difference in signal propagation times over the clock signal line and data timing signal line; and
means for outputting to the DRAM, via the data timing signal line and during a memory write operation, a write data timing signal having the identified phase offset.