Palladium-coated copper bonding wire, wire bonding structure, semiconductor device, and manufacturing method of semiconductor device
The bonding wire being a Pd-coated copper bonding wire includes: a copper core material; and a Pd layer and containing a sulfur group element, in which with respect to the total of copper, Pd, and the sulfur group element, a concentration of Pd is 1.0 mass % to 4.0 mass % and a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of S is 5 mass ppm to 2 mass ppm, a concentration of Se is 5 mass ppm to 20 mass ppm, or a concentration of Te is 15 mass ppm to 50 mass ppm or less. A wire bonding structure includes a Pd-concentrated region with the concentration of Pd being 2.0 mass % or more relative to the total of Al, copper, and Pd near a bonding surface of an Al-containing electrode of a semiconductor chip and a ball bonding portion.
1. A wire bonding structure, comprising: an aluminum-containing electrode of a semiconductor chip; a bonding wire; and a ball bonding portion between the electrode and the bonding wire, wherein
the bonding wire is a palladium-coated copper bonding wire including: a core material containing copper as a main component; and a palladium layer on the core material and containing a sulfur group element, the palladium-coated copper bonding wire in which with respect to a total of copper, palladium, and the sulfur group element, a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less and a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and
the wire bonding structure includes a palladium-concentrated bonding region with the concentration of palladium being 2.0 mass % or more relative to a total of aluminum, copper, and palladium near a bonding surface of the electrode and the ball bonding portion.
2. The wire bonding structure according to claim 1 , wherein
the palladium-concentrated bonding region is present on lines parallel to a wire longitudinal direction, the lines each passing through a position at a at least distance of one-eighth of the maximum width of the ball bonding in a direction vertical to the wire longitudinal direction from each of both ends.
3. The wire bonding structure according to claim 1 , wherein
an occupancy ratio of the palladium-concentrated bonding region near the bonding surface is 25% or more.
4. A palladium-coated copper bonding wire, comprising:
a core material containing copper as a main component; and
a palladium layer on the core material,
the palladium-coated copper bonding wire containing a sulfur group element, wherein
with respect to the total of copper, palladium, and the sulfur group element of the palladium-coated copper bonding wire, a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less and a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and
when the palladium-coated copper bonding wire is ball bonded onto an aluminum electrode to fabricate a wire bonding structure, a palladium-concentrated bonding region with the concentration of palladium being 2.0 mass % or more relative to a total of aluminum, palladium, and copper is formed near a bonding surface of the ball bonding on the aluminum electrode.
5. The palladium-coated copper bonding wire according to claim 4 , wherein
an occupancy ratio of the palladium-concentrated bonding region near the bonding surface is 25% or more.
6. A semiconductor device, comprising:
a semiconductor chip;
an aluminum-containing aluminum electrode provided on the semiconductor chip;
a gold-coated or silver-coated external electrode provided outside the semiconductor chip; and
a bonding wire connecting the aluminum electrode and a surface of the external electrode, wherein
the bonding wire is made of a palladium-coated copper wire, and
the semiconductor device includes the wire bonding structure according to claim 1 near a bonding surface of the aluminum electrode and the bonding wire.
7. A semiconductor device, comprising:
a semiconductor chip;
an aluminum-containing aluminum electrode provided on the semiconductor chip;
a gold-coated or silver-coated external electrode provided outside the semiconductor chip; and
a bonding wire connecting the aluminum electrode and a surface of the external electrode, wherein
the bonding wire is made of the palladium-coated copper bonding wire according to claim 4 .
8. The semiconductor device according to claim 6 that is QFP (Quad Flat Packaging).
9. The semiconductor device according to claim 6 that is BGA (Ball Grid Array).
10. The semiconductor device according to claim 6 that is QFN (Quad For Non-Lead Packaging).
11. The semiconductor device according to claim 6 that is for automotive applications.
12. A manufacturing method of a semiconductor device, the semiconductor device comprising:
a semiconductor chip;
an aluminum-containing aluminum electrode provided on the semiconductor chip;
a gold-coated or silver-coated external electrode provided outside the semiconductor chip; and
a bonding wire connecting the aluminum electrode and a surface of the external electrode, in which
the bonding wire is made of a palladium-coated copper bonding wire including: a core material containing copper as a main component; and a palladium layer on the core material and containing a sulfur group element,
the palladium-coated copper bonding wire in which with respect to a total of copper, palladium, and the sulfur group element of the palladium-coated copper bonding wire, a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less and a total concentration of the sulfur group element is 5 mass ppm or more and 50 mass ppm or less,
the manufacturing method comprising:
forming a free air ball at a tip of the palladium-coated copper bonding wire and ball bonding the palladium-coated copper bonding wire to the aluminum electrode via the free air ball, and thereby, forming, near a bonding surface of the ball bonding on the electrode, a wire bonding structure including a palladium-concentrated bonding region with the concentration of palladium being 2.0 mass % or more relative to the total of aluminum, copper, and palladium;
and thereafter, second bonding a portion of the palladium-coated copper bonding wire apart from the free air ball by the length of the bonding wire to the surface of the external electrode.
13. The manufacturing method of the semiconductor device according to claim 12 , wherein
an occupancy ratio of the palladium-concentrated bonding region near the bonding surface to the maximum width of the ball bonding portion in a parallel direction is 25% or more.