Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
There is provided a technique that includes: (a) supplying a silicon- and ligand-containing gas to a substrate having a surface on a first base and second base are exposed to adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first and second base; (b) supplying a fluorine-containing gas to the substrate after the silicon is absorbed, to cause the silicon to react with the fluorine-containing gas to modify the surface to be F-terminated; and (c) supplying a film-forming gas to the substrate after the surface is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.
1. A method of manufacturing a semiconductor device, comprising:
(a) supplying a silicon- and ligand-containing gas to a substrate having a surface on which a first base and a second base are exposed to thereby adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first base and the second base;
(b) supplying a fluorine-containing gas to the substrate after the silicon is adsorbed on the surface of the one of the first base and the second base, to thereby cause the silicon adsorbed on the surface of the one of the first base and the second base to react with the fluorine-containing gas to modify the surface of the one of the first base and the second base to be F-terminated; and
(c) supplying a film-forming gas to the substrate after the surface of the one of the first base and the second base is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.
2. The method of claim 1 , wherein (a) is performed under a condition in which the adsorption of the silicon on the surface of the one of the first base and the second base is self-limited.
3. The method of claim 1 , wherein (a) is performed under a condition that the silicon- and ligand-containing gas does not undergo gas phase decomposition.
4. The method of claim 1 , wherein (a) is performed under a condition that the silicon contained in the silicon- and ligand-containing gas is chemically adsorbed on the surface of the one of the first base and the second base.
5. The method of claim 1 , wherein in (a), the silicon contained in the silicon- and ligand-containing gas is adsorbed on the surface of the one of the first base and the second base while suppressing adsorption of the silicon on the surface of the other of the first base and the second base.
6. The method of claim 1 , wherein the one of the first base and the second base before supplying the silicon- and ligand-containing gas has a hydroxyl group-terminated surface, and the other of the first base and the second base before supplying the silicon- and ligand-containing gas has a non-hydroxyl group-terminated surface.
7. The method of claim 1 , wherein ligand in the silicon- and ligand-containing gas is an amino group.
8. The method of claim 1 , wherein the silicon- and ligand-containing gas is an aminosilane-based gas.
9. The method of claim 1 , wherein the silicon- and ligand-containing gas is an aminosilane-based gas containing one amino group in one molecule.
10. The method of claim 1 , wherein the silicon- and ligand-containing gas is a monoaminosilane gas.
11. The method of claim 1 , wherein in (b), the surface of the one of the first base and the second base is modified without being etched.
12. The method of claim 1 , wherein in (b), the surface of the one of the first base and the second base is modified while suppressing the surface of the other of the first base and the second base from being modified.
13. The method of claim 1 , wherein in (c), the film is formed on the surface of the other of the first base and the second base without forming the film on the surface of the one of the first base and the second base.
14. The method of claim 1 , wherein the first base includes an oxygen-containing film, and the second base includes an oxygen-free film.
15. The method of claim 1 , wherein the first base includes an oxide film, and the second base includes a nitride film.
16. The method of claim 1 , wherein the first base includes a film containing silicon and oxygen, and the second base includes a film containing silicon and nitrogen.
17. The method of claim 1 , wherein the one of the first base and the second base is the first base, and the other of the first base and the second base is the second base.
18. The method of claim 1 , wherein at least one selected from the group of (a), (b) and (c) is performed in a non-plasma atmosphere.
19. The method of claim 1 , wherein after performing (c), the F-termination is removed from the surface of the one of the first base and the second base.
20. A substrate processing method, comprising:
(a) supplying a silicon- and ligand-containing gas to a substrate having a surface on which a first base and a second base are exposed to thereby adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first base and the second base;
(b) supplying a fluorine-containing gas to the substrate after the silicon is adsorbed on the surface of the one of the first base and the second base, to thereby cause the silicon adsorbed on the surface of the one of the first base and the second base to react with the fluorine-containing gas to modify the surface of the one of the first base and the second base to be F-terminated; and
(c) supplying a film-forming gas to the substrate after the surface of the one of the first base and the second base is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.
21. A substrate processing apparatus comprising:
a process chamber in which a substrate having a surface on which a first base and a second base are exposed is processed;
a silicon- and ligand-containing gas supply system configured to supply a silicon- and ligand-containing gas to the substrate in the process chamber;
a fluorine-containing gas supply system configured to supply a fluorine-containing gas to the substrate in the process chamber;
a film-forming gas supply system configured to supply a film-forming gas to the substrate in the process chamber; and
a controller configured to be capable of controlling the silicon- and ligand-containing gas supply system, the fluorine-containing gas supply system, and the film-forming gas supply system to perform a process in the process chamber, the process including:
(a) supplying the silicon- and ligand-containing gas to the substrate, to thereby adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first base and the second base;
(b) supplying the fluorine-containing gas to the substrate after the silicon is adsorbed on the surface of the one of the first base and the second base, to thereby cause the silicon adsorbed on the surface of the one of the first base and the second base to react with the fluorine-containing gas to modify the surface of the one of the first base and the second base to be F-terminated; and
(c) supplying the film-forming gas to the substrate after the surface of the one of the first base and the second base is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.
22. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:
(a) supplying a silicon- and ligand-containing gas to a substrate having a surface on which a first base and a second base are exposed, to thereby adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first base and the second base;
(b) supplying a fluorine-containing gas to the substrate after the silicon is adsorbed on the surface of the one of the first base and the second base, to thereby cause the silicon adsorbed on the surface of the one of the first base and the second base to react with the fluorine-containing gas to modify the surface of the one of the first base and the second base to be F-terminated; and
(c) supplying a film-forming gas to the substrate after the surface of the one of the first base and the second base is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.