IP Library Granted Patent US 11,979,990
Granted Patent B2
US 11,979,990 · App. 17/415,030 · Granted May 7, 2024

Wiring board and method for manufacturing the same

Inventors: Masaya Toba (Tokyo, JP); Kazuhiko Kurafuchi (Tokyo, JP); Takashi Masuko (Tokyo, JP); Kazuyuki Mitsukura (Tokyo, JP); Shinichiro Abe (Tokyo, JP)
Assignee: RESONAC CORPORATION
H05K3/181C23C18/1605C23C18/165C23C18/20C23C18/32C23C18/38H05K1/032H05K2201/068
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Quick Facts
Patent No.
US 11,979,990
App. No.
17/415,030
Granted
May 7, 2024
Kind
B2
Abstract

A method for manufacturing a wiring board according to the present disclosure includes: in the following order, (a) a step of irradiating an insulating layer composed of a resin composition with active energy rays; (b) a step of adsorbing an electroless plating catalyst to the insulating layer; and (c) a step of forming a metal layer on a surface of the insulating layer by electroless plating, in which in the step (a), a modified region having a thickness of 20 nm or more in a depth direction from the surface of the insulating layer and voids communicating from the surface of the insulating layer is formed by irradiation of the active energy rays.

Claims (25)

1. A method for manufacturing a wiring board, the method comprising, in a following order:

(a) a step of irradiating an insulating layer composed of a resin composition with active energy rays;

(b) a step of adsorbing an electroless plating catalyst to the insulating layer; and

(c) a step of forming a metal layer on a surface of the insulating layer by electroless plating, wherein

in the step (a), a modified region having a thickness of 20 nm or more in a depth direction from the surface of the insulating layer and voids communicating from the surface of the insulating layer is formed by irradiation of the active energy rays.

2. The method for manufacturing a wiring board according to claim 1 , wherein in the step (c), the metal layer is formed using an electroless copper plating solution.

3. The method for manufacturing a wiring board according to claim 1 , wherein in the step (c), the metal layer is formed using an electroless copper-nickel-phosphorus plating solution.

4. The method for manufacturing a wiring board according to claim 1 , wherein the active energy rays are ultraviolet rays having a wavelength of 254 nm or less.

5. The method for manufacturing a wiring board according to claim 1 , wherein an arithmetic average roughness Ra of the surface of the insulating layer after the step (c) is 100 nm or less.

6. The method for manufacturing a wiring board according to claim 1 , wherein a nickel content rate of the metal layer is 0.25 to 20% by mass.

7. A wiring board comprising:

an insulating layer composed of a resin composition; and

a metal wiring provided on a surface of the insulating layer, wherein

the insulating layer has a modified region having a thickness of 20 nm or more in a depth direction from the surface, and

copper contained in the metal wiring is dispersed in the modified region.

8. The wiring board according to claim 7 , wherein a part of the metal wiring is formed by electroless plating, and

an electroless plating catalyst is dispersed in the modified region.

9. The wiring board according to claim 7 , wherein an average roughness Ra of the surface of the insulating layer is 100 nm or less.

10. The wiring board according to claim 7 , wherein the resin composition is a cured product of a thermosetting resin composition.

11. The wiring board according to claim 7 , wherein the resin composition is a cured product of a photosensitive resin composition.

12. The wiring board according to claim 7 , further comprising a support substrate the insulating layer being formed on,

wherein the support substrate is wafer-shaped and has a diameter of 200 mm, 300 mm or 450 mm.

13. The wiring board according to claim 7 , further comprising a support substrate the insulating layer being formed on,

wherein the support substrate is rectangular panel-shaped and has a side of 300 to 700 mm.

14. The wiring board according to claim 7 , wherein the insulating layer has a thermal expansion coefficient of 80×10 −6 /K or less.

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
CHANGE OF NAME Recorded Mar 8, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062992/0805 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 23, 2021
From: TOBA, MASAYA; KURAFUCHI, KAZUHIKO; MASUKO, TAKASHI; MITSUKURA, KAZUYUKI; ABE, SHINICHIRO
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 056956/0537 →
Cited By (1)
US 12,695,757