IP Library Granted Patent US 12,221,595
Granted Patent B2
US 12,221,595 · App. 17/420,569 · Granted Feb 11, 2025

Decomposing/cleaning composition, method for cleaning adhesive polymer, and method for producing device wafer

Inventors: Susumu Nakazaki (Tokyo, JP); Kuniaki Miyahara (Tokyo, JP); Tomoyuki Fukuyo (Tokyo, JP)
Assignee: Resonac Corporation
C11D7/5013B08B3/08C11D3/28C11D3/30C11D3/32C11D3/3445C11D3/3481C11D7/28C11D7/3209C11D7/3263C11D7/3281C11D7/34C11D7/50H01L21/02079B08B2220/01B08B2220/04C11D2111/22
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Quick Facts
Patent No.
US 12,221,595
App. No.
17/420,569
Granted
Feb 11, 2025
Kind
B2
Abstract

Provided is a decomposing/cleaning composition for an adhesive polymer having a high etching rate and suppressed infiltration into a contact interface between a substrate such as a device wafer and an adhesive layer such as a fixing tape. The decomposing/cleaning composition of one embodiment is a decomposing/cleaning composition for an adhesive polymer containing a quaternary alkylammonium fluoride or a quaternary alkylammonium fluoride hydrate and an aprotic solvent, wherein the aprotic solvent contains (A) an N-substituted amide compound having no active hydrogens on the nitrogen atoms and (B) at least one organic sulfur oxide selected from the group consisting of sulfoxide compounds and sulfone compounds.

Claims (26)

1. A decomposing cleaning composition of an adhesive polymer comprising a quaternary alkylammonium fluoride or a hydrate of a quaternary alkylammonium fluoride, and an aprotic solvent, wherein the aprotic solvent comprises

(A) an N-substituted amide compound having no active hydrogen on a nitrogen atom, and

(B) at least one organic sulfur oxide selected from the group consisting of a sulfoxide compound and a sulfone compound,

the content of the (A) N-substituted amide compound is 30 to 99% by mass and the content of the (B) organic sulfur oxide is 1 to 70% by mass, with respect to 100% by mass of the aprotic solvent,

the content of the quaternary alkylammonium fluoride is 0.1 to 15% by mass,

the (A) N-substituted amide compound is at least one selected from the group consisting of N-methylpyrrolidone, N-ethylpyrrolidone, and 1,3-dimethyl-2-imidazolidinone,

the (B) organic sulfur oxide is at least one selected from the group consisting of dimethyl sulfoxide and sulfolane, and

the quaternary alkylammonium fluoride is tetrabutylammonium fluoride.

2. The decomposing cleaning composition according to claim 1 , wherein the (A) N-substituted amide compound is N-methylpyrrolidone or N-ethylpyrrolidone.

3. The decomposing cleaning composition according to claim 1 , wherein the organic sulfur oxide compound is dimethyl sulfoxide.

4. The decomposing cleaning composition according to claim 1 , wherein the organic sulfur oxide compound is sulfolane.

5. The decomposing cleaning composition according to claim 1 , wherein the content of the (A) N-substituted amide compound is 50 to 99% by mass and the content of the (B) organic sulfur oxide is 1 to 50% by mass, with respect to 100% by mass of the aprotic solvent.

6. The decomposing cleaning composition according to claim 1 , wherein the content of the (A) N-substituted amide compound is 70 to 98% by mass and the content of the (B) organic sulfur oxide is 2 to 30% by mass, with respect to 100% by mass of the aprotic solvent.

7. The decomposing cleaning composition according to claim 1 , wherein the adhesive polymer is a polyorganosiloxane compound.

8. A method for cleaning an adhesive polymer on a substrate by using the decomposing cleaning composition according to claim 1 .

9. The method according to claim 8 , comprising carrying out the cleaning with the substrate in contact with an acrylic pressure sensitive adhesive.

10. A method for producing a device wafer comprising cleaning an adhesive polymer on a front surface of a device wafer by using the decomposing cleaning composition according to claim 1 .

11. The method according to claim 10 , comprising carrying out the cleaning with the device wafer in contact with an acrylic pressure sensitive adhesive.

12. The decomposing cleaning composition according to claim 1 , wherein the content of the aprotic solvent in the decomposing cleaning composition is 70 to 99.9% by mass.

13. The decomposing cleaning composition according to claim 1 , wherein the aprotic solvent comprises N-methylpyrrolidone and dimethyl sulfoxide.

14. The decomposing cleaning composition according to claim 1 , wherein the aprotic solvent comprises N-methylpyrrolidone and sulfolane.

15. The decomposing cleaning composition according to claim 1 , wherein the aprotic solvent comprises N-ethylpyrrolidone and dimethyl sulfoxide.

16. The decomposing cleaning composition according to claim 1 , wherein the aprotic solvent comprises N-ethylpyrrolidone and sulfolane.

17. The decomposing cleaning composition according to claim 1 , wherein the aprotic solvent comprises 1,3-dimethyl-2-imidazolidinone and dimethyl sulfoxide.

18. The decomposing cleaning composition according to claim 1 , wherein the aprotic solvent comprises 1,3-dimethyl-2-imidazolidinone and sulfolane.

19. The decomposing cleaning composition according to claim 1 , wherein the aprotic solvent comprises N-methylpyrrolidone, dimethyl sulfoxide, and sulfolane.

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
CHANGE OF NAME Recorded Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2021
From: NAKAZAKI, SUSUMU; MIYAHARA, KUNIAKI; FUKUYO, TOMOYUKI
To: SHOWA DENKO K.K.
Reel/Frame 056747/0221 →