IP Library Granted Patent US 12,098,300
Granted Patent B2
US 12,098,300 · App. 17/431,635 · Granted Sep 24, 2024

Polishing liquid and polishing method

Inventors: Ai Fujimatsu (Tokyo, JP); Mamiko Iwano (Tokyo, JP); Nao Yamamura (Tokyo, JP)
Assignee: RESONAC CORPORATION
C09G1/02H01L21/31053
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Quick Facts
Patent No.
US 12,098,300
App. No.
17/431,635
Granted
Sep 24, 2024
Kind
B2
Abstract

An aspect of the present invention is a polishing liquid containing abrasive grains, a copolymer, and a liquid medium, in which the copolymer has a structure unit derived from at least one styrene compound selected from the group consisting of styrene and a styrene derivative and a structure unit derived from acrylic acid, a content of the copolymer is more than 0.01% by mass and 0.2% by mass or less based on the total amount of the polishing liquid, and a pH of the polishing liquid is more than 4.5.

Claims (32)

1. A polishing liquid comprising abrasive grains, a copolymer, and a liquid medium, wherein

a zeta potential of the abrasive grains is negative,

the copolymer comprises a structure unit derived from at least one styrene compound selected from the group consisting of styrene and a styrene derivative and a structure unit derived from acrylic acid,

a content of the copolymer is more than 0.01% by mass and less than 0.1% by mass based on the total amount of the polishing liquid, and

a pH of the polishing liquid is more than 4.5.

2. The polishing liquid according to claim 1 , wherein the pH of the polishing liquid is 7.5 or less.

3. The polishing liquid according to claim 1 , further comprising a water-soluble polymer.

4. The polishing liquid according to claim 1 , wherein a ratio of the structure unit derived from the styrene compound in the copolymer is 10 mol % or more.

5. The polishing liquid according to claim 1 , wherein a ratio of the structure unit derived from the styrene compound in the copolymer is 50 mol % or less.

6. The polishing liquid according to claim 1 , wherein the copolymer comprises a structure unit derived from styrene.

7. The polishing liquid according to claim 6 , wherein the content of the copolymer is more than 0.01% by mass and less than 0.1% by mass.

8. The polishing liquid according to claim 1 , wherein the abrasive grains comprise at least one selected from the group consisting of ceria, silica, alumina, zirconia, and yttria.

9. The polishing liquid according to claim 1 , further comprising a hydrogen phosphate compound.

10. The polishing liquid according to claim 1 , wherein a ratio of at least one group selected from the group consisting of a sulfonic acid group and a sultanate group in the copolymer is less than 5 mol%.

11. The polishing liquid according to claim 1 , wherein a content of the copolymer is more than 6 parts by mass with respect to 100 parts by mass of the abrasive grains.

12. The polishing liquid according to claim 1 , wherein the polishing liquid is used for polishing a surface to be polished comprising silicon oxide.

13. The polishing liquid according to claim 1 , wherein a content of the abrasive grains is 1.0% by mass or less based on the total amount of the polishing liquid.

14. A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to claim 1 .

15. The polishing method according to claim 14 , wherein the surface to be polished comprises silicon oxide.

16. A polishing method for a surface to be polished comprising an insulating material and silicon nitride, the polishing method comprising:

a step of selectively polishing the insulating material with respect to the silicon nitride by using the polishing liquid according to claim 1 .

17. The polishing method according to claim 16 , wherein the insulating material comprises silicon oxide.

18. A polishing liquid comprising abrasive grains, a copolymer, and a liquid medium, wherein

the copolymer comprises a structure unit derived from at least one styrene compound selected from the group consisting of styrene and a styrene derivative and a structure unit derived from acrylic acid,

a ratio of the structure unit derived from the styrene compound in the copolymer is 10 mol % or more,

a content of the copolymer is more than 0.01% by mass and less than 0.1% by mass based on the total amount of the polishing liquid, and

a pH of the polishing liquid is more than 4.5.

19. A polishing liquid comprising abrasive grains, a copolymer, and a liquid medium, wherein

the copolymer comprises a structure unit derived from at least one styrene compound selected from the group consisting of styrene and a styrene derivative and a structure unit derived from acrylic acid,

a ratio of the structure unit derived from the styrene compound in the copolymer is 50 mol % or less,

a content of the copolymer is more than 0.01% by mass and less than 0.1% by mass based on the total amount of the polishing liquid, and

a pH of the polishing liquid is more than 4.5.

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
CHANGE OF NAME Recorded Mar 8, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062992/0805 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 17, 2021
From: FUJIMATSU, AI; IWANO, MAMIKO; YAMAMURA, NAO
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 057204/0290 →
Continuity (1)
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