Polishing solution, polishing solution set, polishing method, and defect suppressing method

1. A polishing liquid comprising: abrasive grains; a first nitrogen-containing compound; a second nitrogen-containing compound; and water, wherein

the first nitrogen-containing compound contains at least one selected from the group consisting of (I) a compound having an aromatic ring containing one nitrogen atom in a ring and a hydroxyl group, (II) a compound having an aromatic ring containing one nitrogen atom in a ring and a functional group containing a nitrogen atom, (III) a compound having a 6-membered ring containing two nitrogen atoms in a ring, (IV) a compound having a benzene ring and a ring containing a nitrogen atom in the ring, and (V) a compound having a benzene ring to which two or more functional groups containing a nitrogen atom are bonded, and

an HLB value of the second nitrogen-containing compound is 7 or more.

2. The polishing liquid according to claim 1 , wherein the first nitrogen-containing compound contains the compound (II).

3. The polishing liquid according to claim 1 , wherein the first nitrogen-containing compound contains the compound (III).

4. The polishing liquid according to claim 1 , wherein the first nitrogen-containing compound contains nicotinamide.

5. The polishing liquid according to claim 4 , wherein the abrasive grains contain cerium oxide.

6. The polishing liquid according to claim 1 , wherein the second nitrogen-containing compound contains polyoxyethylene beef tallow alkylamine.

7. The polishing liquid according to claim 1 , wherein a content of the abrasive grains is 0.7 to 20% by mass.

8. The polishing liquid according to claim 1 , wherein the HLB value of the second nitrogen-containing compound is 17 or more.

9. The polishing liquid according to claim 1 , wherein the first nitrogen-containing compound contains aminopyridine.

10. The polishing liquid according to claim 1 , wherein the first nitrogen-containing compound contains pyrazinamide.

11. The polishing liquid according to claim 1 , wherein the second nitrogen-containing compound contains a compound represented by General Formula (X) below:

[In the formula, R 1 , R 2 , and R 3 each independently represent a polyoxyalkylene group or a hydrocarbon group which may have a substituent].

12. The polishing liquid according to claim 11 , wherein the second nitrogen-containing compound contains a compound in which one or two of R 1 , R 2 , and R 3 in the above General Formula (X) are a polyoxyethylene group.

13. The polishing liquid according to claim 1 , wherein the second nitrogen-containing compound contains at least one selected from the group consisting of polyoxyethylene oleylamine, polyoxyethylene laurylamine, polyoxyethylene stearylamine, polyoxyethylene beef tallow alkylamine, and polyoxyethylene alkylpropylenediamine.

14. The polishing liquid according to claim 1 , further comprising a polymer compound (A) having at least one selected from the group consisting of a carboxylic acid group and a carboxylate group.

15. The polishing liquid according to claim 1 , further comprising a nonionic polymer compound (B).

16. The polishing liquid according to claim 1 , further comprising a basic compound.

17. The polishing liquid according to claim 16 , wherein a content of the basic compound is 0.04 mol/kg or less.

18. The polishing liquid according to claim 1 , wherein the abrasive grains contain a cerium compound.

19. The polishing liquid according to claim 1 , wherein the abrasive grains contain cerium oxide.

20. The polishing liquid according to claim 1 , wherein a content of the abrasive grains is 0.01 to 20% by mass.

21. The polishing liquid according to claim 1 , wherein a pH is more than 4.0.

22. A polishing liquid set comprising:

constituent components of the polishing liquid according to claim 1 stored while being divided into a first liquid and a second liquid,

the first liquid containing the abrasive grains and water,

the second liquid containing the first nitrogen-containing compound, the second nitrogen-containing compound, and water.

23. A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to claim 1 .

24. The polishing method according to claim 23 , wherein the surface to be polished contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon.

25. A defect suppression method suppressing occurrence of defects in polishing of a surface to be polished containing a stopper material, the method comprising:

a step of polishing a surface to be polished by using the polishing liquid according to claim 1 .

26. The defect suppression method according to claim 25 , wherein the stopper material contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon.

27. A polishing method comprising a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 22 .

28. The polishing method according to claim 27 , wherein the surface to be polished contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon.

29. A defect suppression method suppressing occurrence of defects in polishing of a surface to be polished containing a stopper material, the method comprising:

a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 22 .

30. The defect suppression method according to claim 29 , wherein the stopper material contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon.