IP Library › Granted Patent US 12,424,584
Granted Patent B2
US 12,424,584 · App. 17/452,753 · Granted Sep 23, 2025

Direct bonding methods and structures

Inventor: Cyprian Emeka Uzoh (San Jose, CA)
Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
H01L24/80H01L2224/80019H01L2224/80895H01L2224/80896
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Quick Facts
Patent No.
US 12,424,584
App. No.
17/452,753
Granted
Sep 23, 2025
Kind
B2
Abstract

A bonding method can include polishing a first bonding layer of a first element for direct bonding, the first bonding layer comprises a first conductive pad and a first non-conductive bonding region. After the polishing, a last chemical treatment can be performed on the polished first bonding layer. After performing the last chemical treatment, the first bonding layer of the first element can be directly bonded to a second bonding layer of a second element without an intervening adhesive, including directly bonding the first conductive pad to a second conductive pad of the second bonding layer and directly bonding the first non-conductive bonding region to a second nonconductive bonding region of the second bonding layer. No treatment or rinse is performed on the first bonding layer between performing the last chemical treatment and directly bonding.

Claims (42)

1. A bonding method comprising:

polishing a first bonding layer of a first element for direct bonding, the first bonding layer comprises a first conductive pad and a first non-conductive bonding region;

after the polishing, performing a last chemical treatment of the polished first bonding layer; and

after performing the last chemical treatment, directly bonding the first bonding layer of the first element to a second bonding layer of a second element without an intervening adhesive, including directly bonding the first conductive pad to a second conductive pad of the second bonding layer and directly bonding the first non-conductive bonding region to a second nonconductive bonding region of the second bonding layer, wherein no treatment or rinse is performed on the first bonding layer between performing the last chemical treatment and directly bonding.

2. The bonding method of claim 1 , further comprising activating the first bonding layer for direct bonding.

3. The bonding method of claim 2 , wherein the activating is performed before performing the last chemical treatment.

4. The bonding method of claim 2 , wherein activating comprises exposing the first bonding layer to a plasma.

5. The bonding method of claim 4 , wherein activating comprises exposing the first bonding layer to a nitrogen-containing plasma.

6. The bonding method of claim 1 , wherein performing the last chemical treatment comprises exposing the first bonding layer to a chemical species comprising at least one of boron, phosphorus, manganese, arsenic, peroxide, selenium, carbon, and fluorine or fluoride source.

7. The bonding method of claim 6 , wherein a concentration of the chemical species is in a range of 1 ppm to 1,000 ppm.

8. The bonding method of claim 6 , wherein performing the last chemical treatment comprises exposing the first bonding layer to a source of boron.

9. The bonding method of claim 7 , wherein performing the last chemical treatment comprises exposing the first bonding layer to very dilute borane dimethylamine (BDMA).

10. The bonding method of claim 7 , wherein performing the last chemical treatment comprises exposing the first bonding layer to boric acid.

11. The bonding method of claim 6 , wherein performing the last chemical treatment comprises exposing the first bonding layer to very dilute phosphoric acid.

12. The bonding method of claim 6 , wherein performing the last chemical treatment comprises exposing the first bonding layer to a chemical treatment comprising very dilute buffered hydrofluoric acid (BHF).

13. The bonding method of claim 12 , wherein a pH of the BHF is in a range of 4 to 6.5.

14. The bonding method of claim 1 , wherein performing the last chemical treatment comprises exposing the first bonding layer to a chemical treatment comprising tetramethyl ammonium hydroxide.

15. The bonding method of claim 14 , wherein the last chemical treatment has a pH in a range of 7 to 11.

16. The bonding method of claim 14 , wherein a concentration of the tetramethyl ammonium hydroxide is less than 55 ppm.

17. The bonding method of claim 1 , wherein performing the last chemical treatment comprises exposing the first bonding layer to a chemical treatment comprising one or more of tetramethyl ammonium hydroxide (C4H12N), tert-butylammonium hydroxide, tetraethylammonium hydroxide, ethyltrimethylammonium hydroxide, boric anhydride, boric acid, borane-ammonia (H6BN), borane trimethylamine complex, borane dimethyl amine complex (C2H10BN), tetrahydroxydiboron solution, mannitol (C6H14O6), and ascorbic acid (C6H8O6).

18. The bonding method of claim 1 , further comprising activating the second bonding layer before directly bonding.

19. The bonding method of claim 18 , further comprising, after the activating the second bonding layer, performing a last chemical treatment of the second bonding layer.

20. The bonding method of claim 1 , wherein the directly bonding is performed without activating the second bonding layer.

21. The bonding method of claim 1 , wherein the first element comprises a wafer, the method further comprising providing a protective layer over the first bonding layer and singulating the wafer into a plurality of singulated integrated device dies.

22. A bonded structure formed by the bonding method of claim 1 , wherein the first and second elements are directly bonded along a bonding interface, the bonding interface comprising sediment from the last chemical treatment.

23. The bonding method of claim 1 , wherein the last chemical treatment comprises a chemically active species that reacts with or adsorbs to a polished surface of the polished first bonding layer.

24. The bonding method of claim 1 , wherein the last chemical treatment does not comprise pure water.

25. A bonding method comprising:

polishing a first bonding layer of a first element for direct bonding;

after the polishing, performing a last chemical treatment of the polished first bonding layer, the last treatment comprising tetramethyl ammonium hydroxide; and

after performing the last chemical treatment, directly bonding the first bonding layer of the first element to a second bonding layer of a second element without an intervening adhesive.

26. The bonding method of claim 25 , wherein no liquid treatment is performed on the first bonding layer between performing the last chemical treatment and directly bonding.

27. The bonding method of claim 25 , wherein the last chemical treatment comprises a glass-forming species having a concentration of less than 200 ppm.

28. A bonding method comprising:

activating a first bonding layer of a first element for direct bonding;

after the activating, performing a last chemical treatment of the activated first bonding layer; and

after performing the last treatment, directly bonding a first nonconductive region of the first bonding layer of the first element to a second nonconductive region of a second bonding layer of a second element without an intervening adhesive and directly bonding a first contact pad of the first bonding layer to a second contact pad of the second bonding layer without an intervening adhesive, wherein no treatment or rinse is performed on the first bonding layer between performing the last chemical treatment and directly bonding.

29. The bonding method of claim 28 , wherein no liquid treatment is performed on the first bonding layer between performing the last chemical treatment and directly bonding.

30. The bonding method of claim 28 , wherein no chemical treatment is performed on the first bonding layer between performing the last chemical treatment and directly bonding.

31. The bonded structure of claim 22 , wherein the sediment comprises at least a local peak concentration of a dilute chemical used in the chemical treatment.

32. The bonding method of claim 28 , wherein the last chemical treatment comprises a chemically active species that reacts with or adsorbs to an activated surface of the activated first bonding layer.

33. The bonding method of claim 28 , wherein the last chemical treatment does not comprise pure water.

Assignments (3)
SECURITY INTEREST Recorded May 19, 2023
From: ADEIA GUIDES INC.; ADEIA MEDIA HOLDINGS LLC; ADEIA MEDIA SOLUTIONS INC.; ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.; ADEIA SEMICONDUCTOR SOLUTIONS LLC; ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 063707/0884 →
CHANGE OF NAME Recorded May 9, 2023
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 063589/0202 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 29, 2021
From: UZOH, CYPRIAN EMEKA
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 058503/0573 →
Continuity (2)
Provisional Application 63107228 · Oct 29, 2020
Related Publication 20220139867A1 · May 5, 2022
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