Semiconductor device and method for manufacturing the same
A semiconductor device includes a predetermined number of leads, a semiconductor element electrically connected to the leads and supported by one of the leads, and a sealing resin that covers the semiconductor element and a part of each lead. Each lead includes some portions exposed from the sealing resin. A surface plating layer is formed on at least one of the exposed portions of the respective leads.
1. A semiconductor device comprising:
a first lead having an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction;
a semiconductor element provided with at least one electrode and supported by the first lead;
a second lead adjacent to the first lead;
a third lead adjacent to the first lead;
a sealing resin covering a part of the first lead, a part of the second lead, a part of the third lead, and the semiconductor element, the sealing resin being rectangular in plan view and including a first side surface, a second side surface opposite to the first side surface, a third side surface other than the first and the second side surface, and a bottom surface;
a first wire connecting the semiconductor element to the second lead; and
a second wire connecting the semiconductor element to the third lead,
wherein the first lead comprises an exposed portion that is exposed from the bottom surface of the sealing resin,
the second lead includes a first exposed portion exposed from the first side surface of the sealing resin,
the third lead includes a second exposed portion exposed from the second side surface of the sealing resin,
the first and second side surfaces of the sealing resin each include a first section and a second section, the first section being disposed outward with respect to the second section in plan view, the first exposed portion being located in the second section of the first side surface of the sealing resin, the second exposed portion being located in the second section of the second side surface of the sealing resin, wherein the second exposed portion and the second section of the second side surface have respective regions that are flush with each other.
2. The semiconductor device according to claim 1 , wherein each of the first exposed portion and the second exposed portion is formed with a plating layer.
3. The semiconductor device according to claim 2 , wherein the exposed portion of the first lead is rectangular in plan view.
4. The semiconductor device according to claim 3 , wherein the first and second sections of the first side surface each extend over an entire length of the first side surface in a direction perpendicular to the thickness direction.
5. The semiconductor device according to claim 4 , wherein the first and second sections of the second side surface each extend over an entire length of the second side surface in the direction perpendicular to the thickness direction.
6. The semiconductor device according to claim 5 , further comprising a third wire connecting the semiconductor element and the second lead, wherein the first wire and the third wire have a same potential.
7. The semiconductor device according to claim 6 , wherein the second wire has a gate potential.
8. The semiconductor device according to claim 7 , wherein the first wire and the third wire have a source potential.
9. The semiconductor device according to claim 8 , wherein the first and second side surfaces are each greater in length than the third side surface.
10. The semiconductor device according to claim 1 , wherein the first lead comprises a thick portion overlapping with the semiconductor element in plan view.
11. The semiconductor device according to claim 1 , wherein the first lead comprises a plurality of exposed portions that are exposed from the first side surface of the sealing resin.
12. The semiconductor device according to claim 11 , wherein the first lead comprises a plurality of exposed portions that are exposed from the second side surface of the sealing resin.
13. The semiconductor device according to claim 1 , wherein the second lead is smaller in area in plan view than the first lead.
14. The semiconductor device according to claim 1 , wherein the first lead comprises a linear edge facing the second lead in plan view, and the second lead is elongated along the linear edge.
15. The semiconductor device according to claim 1 , further comprising a fourth wire connecting the semiconductor element to the second lead, wherein the at least one electrode of the semiconductor element comprises a first electrode and a second electrode, the first wire being bonded to the first electrode and the fourth wire being bonded to the second electrode.
16. The semiconductor device according to claim 1 , wherein the sealing resin comprises a fourth side surface opposite to the third side surface, and the first lead comprises a portion that is exposed from the fourth side surface.
17. The semiconductor device according to claim 1 , wherein the second lead comprises at least one lower portion exposed from the bottom surface of the sealing resin.
18. The semiconductor device according to claim 17 , wherein the at least one lower portion of the second lead comprises a first lower portion and a second lower portion that are exposed from the bottom surface of the sealing resin.
19. The semiconductor device according to claim 18 , wherein the first lower portion and the second lower portion are spaced apart from each other in a direction parallel to the third side surface of the sealing resin.
20. The semiconductor device according to claim 19 , wherein the first lower portion and the second lower portion are different in area in plan view.