Face-to-face through-silicon via multi-chip semiconductor apparatus with redistribution layer packaging and methods of assembling same
Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.
1. A process of assembling a semiconductor apparatus, comprising:
forming first and second electrical bumps on a metallization of a first semiconductive device, wherein the first semiconductive device includes an active surface and a backside surface, and wherein the metallization is part of the active surface;
forming a redistribution layer on the first semiconductive device backside surface, wherein the first semiconductive device includes a through-silicon via (TSV) that communicates from the backside surface to the metallization, the redistribution layer having a via in direct physical contact with the TSV, the redistribution layer having a trace that contacts the via, the trace in a trace level, and the redistribution layer having a plurality of bond pads below the trace level;
assembling a subsequent semiconductive device and a second semiconductive device to first and second electrical bumps on the active surface, wherein the second and subsequent semiconductive devices are assembled face-to-face to the first semiconductive device; and
wherein the first semiconductive device forms a footprint that shadows the subsequent semiconductive device, the second semiconductive device and the redistribution layer.
2. The process of claim 1 , further including:
contacting the first and second electrical bumps with a molding compound that also contacts the first, subsequent and second semiconductive devices; and
planarizing the molding compound at the subsequent and second semiconductive device backside surfaces.
3. The process of claim 1 , further including:
contacting the first and second electrical bumps with a molding compound that also contacts the first, subsequent and second semiconductive devices;
planarizing the molding compound at the subsequent and second semiconductive device backside surfaces; and
seating a heat sink at the subsequent and second semiconductive device backside surfaces.
4. The process of claim 1 , wherein the first semiconductive device is part of a semiconductive wafer including a plurality of semiconductive devices, further including after assembling the second semiconductive device:
contacting the first and second electrical bumps with a molding compound that also contacts the first, subsequent and second semiconductive devices; planarizing the molding compound at the subsequent and second semiconductive device backside surfaces; and
singulating the first semiconductive device from the semiconductive wafer to achieve a package with the subsequent and second semiconductive devices and the redistribution layer.
5. The process of claim 1 , wherein the first semiconductive device is part of a semiconductive wafer including a plurality of semiconductive devices, further including after assembling the second semiconductive device:
contacting the first and second electrical bumps with a molding compound that also contacts the first, subsequent and second semiconductive devices;
planarizing the molding compound at the subsequent and second semiconductive device backside surfaces; and
singulating the first semiconductive device from the semiconductive wafer to achieve a package with the subsequent and second semiconductive devices and the redistribution layer; and
seating a heat sink at the subsequent and second semiconductive device backside surfaces.
6. A method, comprising:
forming first and second electrical bumps on a metallization of a first semiconductive device, wherein the first semiconductive device includes an active surface and a backside surface, and wherein the metallization is formed on the active surface;
forming a redistribution layer in direct contact with the first semiconductive device backside surface, wherein the first semiconductive device includes a through-silicon via (TSV) that communicates from the backside surface to the metallization, the redistribution layer having a via in direct physical contact with the TSV, the redistribution layer having a trace that contacts the via, the trace in a trace level, and the redistribution layer having a plurality of bond pads below the trace level; and
assembling a processor die and a second die to the respective first and second electrical bumps face-to-face with the first semiconductive device.
7. The method of claim 6 , wherein assembling a processor die and a second die includes assembling such that the first semiconductive device forms a footprint that shadows the processor die and the second die.
8. The method of claim 6 , wherein assembling a processor die and a second die includes assembling such that the first semiconductive device forms a footprint that shadows the redistribution layer.
9. The method of claim 6 , further including forming the through-silicon via (TSV) in the first semiconductive device with a taper from a wider dimension at the backside surface to a narrower dimension at the active surface.
10. The method of claim 6 , wherein forming first and second electrical bumps on a metallization of a first semiconductive device includes forming first and second copper pillars.
11. The method of claim 6 , wherein assembling the processor die and the second die includes assembling the processor die and a memory controller hub die.
12. A method, comprising:
forming a plurality of first semiconductor devices at a wafer level, the first semiconductor devices including an active surface, a backside surface and a metallization on the active surface;
forming first and second electrical bumps on the metallization of the first semiconductive devices;
forming a redistribution layer in direct contact with the first semiconductive device backside surface, wherein the first semiconductive device includes a through-silicon via (TSV) that communicates from the backside surface to the metallization, the redistribution layer having a via in direct physical contact with the TSV, the redistribution layer having a trace that contacts the via, the trace in a trace level, and the redistribution layer having a plurality of bond pads below the trace level;
assembling a processor die and a second die to the respective first and second electrical bumps face-to-face with the first semiconductive device; and
singulating the first semiconductor devices into separate devices with a respective processor die and second die.
13. The method of claim 12 , further including at least partially encapsulating the processor die and the second die with a molding compound, and planarizing the molding compound at a backside of the processor die and the second die prior to singulating.
14. The method of claim 12 , further including attaching a ball grid array to an exposed surface of the redistribution layer prior to singulating.