IP Library Granted Patent US 11,763,911
Granted Patent B2
US 11,763,911 · App. 17/494,129 · Granted Sep 19, 2023

On-chip-copy for integrated memory assembly

Inventors: Eran Sharon (Rishon Lezion, IL); Idan Alrod (Herzliya, IL)
Assignee: Western Digital Technologies, Inc.
G11C29/44G11C29/12005G11C29/42G11C29/78G11C2029/1202
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Quick Facts
Patent No.
US 11,763,911
App. No.
17/494,129
Granted
Sep 19, 2023
Kind
B2
Abstract

A non-volatile memory system comprises an integrated memory assembly in communication with a memory controller. The integrated memory assembly includes a memory die bonded to a control die. The control die includes one or more control circuits for controlling the operation of the memory die. The control circuits are configured to receive a request to copy data on the memory die, read codewords on the memory die in response to the request, decode the codewords to identify errors in the codewords, correcting the errors in the codewords, and program the codewords back into the memory die. In one embodiment, the codewords read are stored in the memory die as single bit per memory cell data and the codewords programmed back into the memory die after correcting errors are programmed as multiple bit per memory cell data.

Claims (68)

1. A method, comprising:

transferring codewords that are stored in non-volatile memory cells on a memory die to a control die bonded to the memory die, the codewords are stored in the non-volatile memory cells on the memory die as single bit per memory cell data;

on the control die, decoding the transferred codewords to identify one or more errors;

on the control die, fixing the identified errors in the codewords; and

after fixing the identified errors in the codewords, programming the codewords to the memory die as multiple bit per memory cell data such that multiple non-volatile memory cells of the memory die store data from multiple codewords.

2. The method of claim 1 , wherein:

the programming the codewords comprises programming using a multi-pass programming process;

the multi-pass programming process comprises programming a first subset of the codewords during a first pass of the multi-pass programming process and programming a second subset of the codewords during a later pass of the multi-pass programming process that is subsequent to the first pass; and

the decoding the transferred codewords comprises decoding the second subset of the codewords on the control die while programming the first subset of the codewords on the memory die during the first pass of the multi-pass programming process.

3. The method of claim 1 , wherein:

each of the codewords comprises data bits and parity bits; and

the fixing the identified errors in the codewords and programming the codewords comprises changing the data bits or the parity bits, without removing the parity bits and without performing an encoding process, and programming the codewords with the changed data bits or the parity bits.

4. The method of claim 1 , further comprising:

receiving a command from a memory controller that is connected to and separate from the control die; and

the transferring codewords, decoding, fixing and programming are performed in response to the command.

5. The method of claim 4 , wherein:

the transferring codewords, decoding, fixing and programming are performed without the codewords being transferred to the memory controller.

6. The method of claim 4 , wherein:

the memory controller is configured to decode codewords using a first decoding technique; and

the control die performs the decoding the transferred codewords using a second decoding technique, the first decoding technique decodes codewords at a first resolution, the second decoding technique decodes codewords at a second resolution that is lower than the first resolution, the second decoding technique uses less power than the first decoding technique.

7. The method of claim 4 , wherein:

the command is a block level command to perform an on-chip-copy from one or more source blocks of the non-volatile memory cells to one or more target blocks of the non-volatile memory cells.

8. The method of claim 7 , further comprising:

sending an acknowledgement from the control die to the memory controller indicating that the on-chip-copy was successfully performed; and

the transferring codewords, decoding, fixing and programming are performed without the codewords being transferred to the memory controller.

9. A method, comprising:

receiving a command from a memory controller to copy data stored on a first semiconductor die, the command is received at a second semiconductor die, the memory controller is connected to and separate from the second semiconductor die, the memory controller is also separate from the first semiconductor die, the second semiconductor die is bonded to the first semiconductor die;

in response to the command, transferring codewords from a first set of non-volatile memory cells on the first semiconductor to the second semiconductor die;

on the second semiconductor die, decoding the transferred codewords to identify one or more errors;

on the second semiconductor die, fixing the identified errors and creating updated codewords; and

programming the updated codewords from the second semiconductor to non-volatile memory cells on the first semiconductor die.

10. The method of claim 9 , wherein:

the first semiconductor die is a memory die comprising a non-volatile memory array, the non-volatile memory array includes the non-volatile memory cells; and

the second semiconductor die is a control die directly bonded to the memory die.

11. The method of claim 9 , wherein:

each of the codewords comprises data bits and parity bits; and

the fixing the identified errors comprises changing the data bits or the parity bits, without removing the parity bits and without performing an encoding process.

12. The method of claim 9 , wherein:

the first semiconductor die is a memory die comprising a non-volatile memory array, the non-volatile memory array includes the non-volatile memory cells;

the second semiconductor die is a control die directly bonded to the memory die to form a first integrated memory assembly;

the control die includes an interface for connecting to and communicating with the memory controller; and

the memory controller is connected to multiple integrated assemblies, all of which include a control die bonded to a memory die.

13. The method of claim 12 , wherein:

the transferring codewords, decoding, fixing and programming are performed without the codewords being transferred to the memory controller.

14. The method of claim 13 , wherein:

the memory controller is configured to decode codewords using a first decoding technique; and

the control die performs the decoding the transferred codewords using a second decoding technique, the first decoding technique decodes codewords at a first resolution, the second decoding technique decodes codewords at a second resolution that is lower than the first resolution, the second decoding technique uses lower power than the first decoding technique.

15. A method, comprising:

receiving a request to copy data stored on a memory die, the request is received at a control die from a memory controller connected to and separate from the control die, the control die is bonded to the memory die, memory die includes non-volatile memory cells;

in response to the request to copy data, reading codewords from the memory die, the codewords are encoded versions of the data;

on the control die, decoding the transferred codewords to identify one or more errors;

on the control die, fixing the identified errors and creating updated codewords; and

programming the updated codewords to the memory die;

the receiving the request, reading codewords, decoding, fixing and programming are performed without transferring the codewords to the memory controller.

16. The method of claim 15 , wherein:

the programming the codewords comprises programming using a multi-pass programming process;

the multi-pass programming process comprises programming a first subset of the updated codewords during a first pass of the multi-pass programming process and programming a second subset of the updated codewords during a later pass of the multi-pass programming process that is subsequent to the first pass; and

the decoding the transferred codewords comprises decoding a subset of the codewords on the control die while programming the first subset of the codewords on the memory die during the first pass of the multi-pass programming process.

17. The method of claim 15 , wherein:

each of the codewords comprises data bits and parity bits; and

the fixing the identified errors in the codewords comprises changing the data bits or the parity bits, without removing the parity bits and without performing an encoding process.

18. The method of claim 15 , wherein:

the memory controller is configured to decode codewords using a first decoding technique; and

the control die performs the decoding the transferred codewords using a second decoding technique, the first decoding technique decodes codewords at a first resolution, the second decoding technique decodes codewords at a second resolution that is lower than the first resolution, the second decoding technique uses less power than the first decoding technique.

19. The method of claim 15 , wherein:

the request to copy data is a block level command to perform an on-chip-copy from one or more source blocks of the non-volatile memory cells to one or more target blocks of the non-volatile memory cells.

20. The method of claim 19 , further comprising:

after the programming, sending an acknowledgement from the control die to the memory controller indicating that the on-chip-copy was successfully performed.

Assignments (10)
PARTIAL RELEASE OF SECURITY INTERESTS Recorded Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →
SECURITY AGREEMENT Recorded Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →
PATENT COLLATERAL AGREEMENT Recorded Aug 23, 2024
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS THE AGENT
Reel/Frame 068762/0494 →
CHANGE OF NAME Recorded Jun 27, 2024
From: SANDISK TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067982/0032 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2024
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067567/0682 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
RELEASE OF SECURITY INTEREST AT REEL 058426 FRAME 0815 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058965/0679 →
SECURITY INTEREST Recorded Dec 9, 2021
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 058426/0815 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2021
From: SHARON, ERAN; ALROD, IDAN
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 057702/0840 →