IP Library › Granted Patent US 12,334,544
Granted Patent B2
US 12,334,544 · App. 17/512,053 · Granted Jun 17, 2025

Negative electrode material and electrochemical apparatus and electronic apparatus containing the negative electrode material

Inventors: Ting Yi (Ningde, CN); Hang Cui (Ningde, CN); Yuansen Xie (Ningde, CN)
Assignee: NINGDE AMPEREX TECHNOLOGY LIMITED
H01M4/366H01M4/483H01M4/587H01M4/622H01M4/625H01M10/0525H01M2004/021H01M2004/027
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,334,544
App. No.
17/512,053
Granted
Jun 17, 2025
Kind
B2
Abstract

A negative electrode material of this application includes silicon-based particles, where the silicon-based particles include: a silicon oxide SiO x , where x is 0.5 to 1.6; and a carbon layer, where the carbon layer covers at least a portion of a surface of the silicon oxide SiO x . In a Raman spectrum, a ratio of a height I 1350 of the silicon-based particles at a peak of 1350 cm −1 to a height I 1580 at a peak of 1580 cm −1 satisfies 0<I 1350 /I 1580 <5, and a ratio of a height I 510 at a peak of 510 cm −1 to the height I 1350 at the peak of 1350 cm −1 satisfies 0<I 510 /I 1350 <12. A lithium ion battery prepared from the negative electrode active material has improved first efficiency, cycling performance, and rate performance.

Claims (31)

1. A negative electrode material, wherein the negative electrode material comprises silicon-based particles, and the silicon-based particles comprise:

a silicon oxide SiO x , wherein x is 0.5 to 1.6; and

a carbon layer, wherein the carbon layer covers at least a portion of a surface of the silicon oxide SiO x ;

wherein in a Raman spectrum, a ratio of a height I 1350 of the silicon-based particles at a peak of 1350 cm −1 to a height I 1580 at a peak of 1580 cm −1 is 0<I 1350 /I 1580 <5; and

a ratio of a height I 510 at a peak of 510 cm −1 to the height I 1350 at the peak of 1350 cm −1 is 2.3<I 510 /I 1350 <12.

2. The negative electrode material according to claim 1 , wherein the silicon oxide SiO x comprises SiO, SiO 2 , nano-Si grains, or any combination thereof.

3. The negative electrode material according to claim 1 , wherein a specific surface area of the silicon-based particles is 2.5 m 2 /g to 15 m 2 /g.

4. The negative electrode material according to claim 1 , wherein a thickness of the carbon layer is 3 nm to 40 nm.

5. The negative electrode material according to claim 1 , wherein an average particle size of the silicon-based particles is 500 nm to 30 μm.

6. A negative electrode, wherein the negative electrode comprises a current collector and a coating on the current collector, and the coating comprises silicon-based particles;

wherein the silicon-based particles comprise:

a silicon oxide SiO x , wherein x is 0.5 to 1.5;

wherein the silicon-based particles further comprise a carbon layer, wherein the carbon layer covers at least a portion of a surface of the silicon oxide SiO x ; and

wherein in a Raman spectrum, a ratio of a height I 510 at a peak of 510 cm −1 to the height I 1350 at the peak of 1350 cm −1 is 2.3<I 510 /I 1350 <12.

7. The negative electrode according to claim 6 , wherein in the Raman spectrum, a ratio of a height I 1350 of the silicon-based particles at a peak of 1350 cm −1 to a height I 1580 at a peak of 1580 cm −1 is 0<I 1350 /I 1580 <5.

8. The negative electrode according to claim 6 , wherein the current collector comprises copper, aluminum, nickel, copper alloy, aluminum alloy, nickel alloy, or any combination thereof.

9. The negative electrode according to claim 6 , wherein an X-ray diffraction pattern of the coating comprises a [004] diffraction pattern and a [110] diffraction pattern, a ratio of a c-axis length C004 of a unit cell length acquired from the [004] diffraction pattern to an a-axis length C110 of a unit cell length acquired from the [110] diffraction pattern, C004/C110, is an orientation index (OI) value of the coating, and the OI value is 7.5<OI<18.

10. The negative electrode according to claim 6 , wherein a specific surface area of the silicon-based particles is 2.5 m 2 /g to 15 m 2 /g.

11. The negative electrode according to claim 6 , wherein the coating further comprises a binder, wherein the binder comprises polyacrylate, polyimide, polyamide, polyamide imide, polyvinylidene fluoride, styrene butadiene rubber, sodium alginate, polyvinyl alcohol, polytetrafluoroethylene, polyacrylonitrile, sodium carboxymethyl cellulose, potassium carboxymethyl cellulose, or any combination thereof.

12. The negative electrode according to claim 6 , wherein a peeling strength between the coating and the current collector is greater than or equal to 20 N/m.

13. The negative electrode according to claim 6 , wherein the coating further comprises graphite particles, wherein

a percentage of a quantity of silicon-based particles adjacent to the graphite particles in a total quantity of the silicon-based particles is greater than or equal to 40%; and

a distance between the silicon-based particles and the adjacent graphite particles is less than or equal to 500 nm.

14. The negative electrode according to claim 13 , wherein a weight ratio of the silicon-based particles to the graphite particles is 0.07 to 0.7.

15. The negative electrode according to claim 13 , wherein a thickness of the carbon layer is 3 nm to 40 nm.

16. The negative electrode according to claim 13 , wherein an X-ray diffraction pattern of the coating comprises a [004] diffraction pattern and a [110] diffraction pattern, a ratio of a c-axis length C004 of a unit cell length acquired from the [004] diffraction pattern to an a-axis length C110 of a unit cell length acquired from the [110] diffraction pattern, C004/C110, is an orientation index (OI) value of the carbon coating, and the OI value is 7.5<OI<18.

17. The negative electrode according to claim 13 , wherein, in the Raman spectrum, a ratio of a height I 1350 of the silicon-based particles at a peak of 1350 cm −1 to a height I 1580 at a peak of 1580 cm −1 is 0<I 1350 /I 1580 <5.

18. A method of preparing the negative electrode material according to claim 1 , wherein the method comprises:

heating the silicon oxide SiO x to 200° C. to 1500° C. in an inert gas atmosphere;

injecting a carbon source gas and heating the gas at 200° C. to 1500° C. for 30 min to 120 min to acquire solids; and

pulverizing and sieving the solids.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2021
From: YI, TING; CUI, HANG; XIE, YUANSEN
To: NINGDE AMPEREX TECHNOLOGY LIMITED
Reel/Frame 057933/0733 →
Continuity (2)
Continuation PCTCN2019121736 · Nov 28, 2019
Related Publication 20220052324A1 · Feb 17, 2022
References Cited (41)
US 9812739B2 · Kefei · 2017 [cited by applicant]
US 10263279B2 · Yushin et al. · 2019 [cited by applicant]
US 20030215711A1 · Aramata · 2003 [cited by examiner]
US 20170110722A1 · Lee et al. · 2017 [cited by applicant]
US 20180198159A1 · Azami · 2018 [cited by examiner]
CN 101504980A · 2009 [cited by applicant]
CN 102792493A · 2012 [cited by applicant]
CN 103081188A · 2013 [cited by applicant]
CN 103094560A · 2013 [cited by applicant]
CN 103618071A · 2014 [cited by applicant]
CN 105981203A · 2016 [cited by applicant]
CN 106463696A · 2017 [cited by applicant]
CN 107046125 · 2017 [cited by examiner]
CN 107046125A · 2017 [cited by applicant]
CN 107710465A · 2018 [cited by applicant]
CN 107845785A · 2018 [cited by applicant]
CN 109524650A · 2019 [cited by applicant]
CN 109616614A · 2019 [cited by applicant]
CN 109841814A · 2019 [cited by applicant]
CN 110034284A · 2019 [cited by applicant]
CN 111162268A · 2020 [cited by applicant]
EP 2869367A1 · 2015 [cited by applicant]
EP 3965192A1 · 2022 [cited by applicant]
JP 2012227154A · 2012 [cited by applicant]
JP 2015043316A · 2015 [cited by applicant]
JP 2016164870A · 2016 [cited by applicant]
JP 2018147672A · 2018 [cited by applicant]
KR 100794192 · 2008 [cited by examiner]
WO 2019031597A1 · 2019 [cited by applicant]
English translation of CN Publication 107046125, Aug. 2017. [cited by examiner]
English translation of KR Publication 100794192, Jan. 2008. [cited by examiner]
Extended European Search Report for EP application No. 19953982.6, dated May 2, 2022. [cited by applicant]
Notice of Reasons for Refusal, JP application No. 2021-517941, dated May 17, 2022. [cited by applicant]
Decision to Grant a Patent, JP application No. 2021-517941, dated Dec. 6, 2022. [cited by applicant]
Third Office Action of CN Application No. 201911198111.7, dated Aug. 25, 2021. [cited by applicant]
Notification to Grant Patent Right for Invention, CN Application No. 201911198111.7, dated Jan. 5, 2022. [cited by applicant]
ISR for International Application PCT-CN2019-121736 mailed Aug. 26, 2020. [cited by applicant]
Written Opinion for International Application PCT-CN2019-121736 mailed Aug. 26, 2020. [cited by applicant]
First Office Action for Counterpart Application No. CN201911198111.7 mailed Sep. 23, 2020. [cited by applicant]
Second Office Action for Counterpart Application No. CN201911198111.7 mailed Apr. 8, 2021. [cited by applicant]
Third Office Action for Counterpart Application No. CN201911198111.7 mailed Aug. 25, 2021. [cited by applicant]