Substrate thinning process using temporary bond with low thickness variation
An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.
1 . An article comprising:
a support unit comprising:
a support substrate comprised of glass, glass ceramic, ceramic, or silicon and having a surface; and
a bonding layer directly bonded to the surface of the support substrate,
wherein a total thickness variation TTV across an entire width of the bonding layer is about 3.0 microns or less and a total thickness variation TTV across an entire width of the support unit is about 2.0 microns or less.
2 . The article of claim 1 , wherein the total thickness variation TTV across the width of the support unit is about 1.0 microns or less.
3 . The article of claim 2 , wherein the total thickness variation TTV across the width of the support unit is about 0.2 microns or less.
4 . The article of claim 1 , wherein:
a total thickness variation TTV across a width of the support substrate is about 1.0 micron or less, and
a total thickness variation TTV across a width of the bonding layer is about 1.0 micron or less.
5 . The article of claim 1 , wherein the support substrate has a surface roughness of about 1.0 nm or less.
6 . The article of claim 1 , further comprising a first substrate, the bonding layer coupling the support substrate with the first substrate.
7 . The article of claim 6 , wherein the first substrate comprises lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ), aluminum nitride (AlN), lead zirconate titanate (PZT) (Pb[Zr x Ti 1-x ]O 3 (0≤x≤1), or a combination thereof.
8 . The article of claim 6 , wherein the first substrate has a thickness of about 2.0 microns or less.
9 . The article of claim 1 , wherein the bonding layer has a thickness of about 100 nm or less.
10 . The article of claim 9 , wherein the thickness of the bonding layer is about 20 nm or less.
11 . The article of claim 1 , wherein the bonding layer comprises one or more surfactants, one or more polymers, one or more organic salts, one or more inorganic materials, or combinations thereof.
12 . The article of claim 11 , wherein the bonding layer consists of alternating layers of first and second layers, the first layer being a monolayer of a cationic polymer and the second layer being a monolayer of an anionic polymer.
13 . The article of claim 12 , wherein one of the first layers is directly attached to the support substrate.
14 . The article of claim 13 , wherein the bonding layer comprises a cationic surfactant with a head group comprising a charged nitrogen selected from a group consisting of primary, secondary, tertiary, or quaternary ammonium, pyridinium, and combinations thereof.
15 . The article of claim 1 , wherein a thickness of the support substrate is in a range from about 0.3 mm to about 1.0 mm.
16 . An article comprising:
a support unit comprising:
a support substrate comprised of glass, glass ceramic, ceramic, or silicon and having a surface; and
a bonding layer directly bonded to the surface of the support substrate,
wherein a total thickness variation TTV across an entire width of the bonding layer is about 3.0 microns or less and a total thickness variation TTV across a width of the support unit is about 2.0 microns or less;
a first substrate, the bonding layer coupling the support substrate with the first substrate; and
a device support wafer removably coupled with the support substrate.