Semiconductor device and protection circuit including diode and buried wiring
A semiconductor device includes a first wiring; a first circuit region provided with a first power supply wiring and a first ground wiring; a second circuit region provided with a second power supply wiring and a second ground wiring; and a bidirectional diode connected between the first and second ground wirings, and provided with first and second diodes. The first diode includes a first impurity region of a first conductive type, connected to the second ground wiring, and a second impurity region of a second conductive type, connected to the first ground wiring. The second diode includes a third impurity region of the second conductive type connected to the second ground wiring, and a fourth impurity region of the first conductive type connected to the first ground wiring. Any of the first to fourth impurity regions, or any combination of the impurity regions is connected to the first wiring.
1. A semiconductor device comprising:
a substrate;
a first groove formed in the substrate;
a second groove formed in the substrate;
a first wiring formed in the first groove;
a second wiring formed in the second groove;
a dummy-wiring formed in the substrate, and insulated from the first wiring and from the second wiring;
a first circuit region provided with a first power supply wiring, and a first ground wiring;
a second circuit region provided with a second power supply wiring, and a second ground wiring; and
a bidirectional diode connected between the first ground wiring and the second ground wiring, and provided with a first diode and a second diode, wherein:
the first diode includes
a first impurity region of a first conductive type, electrically connected to the second ground wiring, and
a second impurity region of a second conductive type, different from the first conductive type, electrically connected to the first ground wiring,
the second diode includes
a third impurity region of the second conductive type, electrically connected to the second ground wiring, and
a fourth impurity region of the first conductive type, electrically connected to the first ground wiring,
the first impurity region, the second impurity region, the third impurity region, or the fourth impurity region, or any combination of the impurity regions is connected to the first wiring,
one of the first impurity region and the second impurity region is connected to the first wiring,
one of the third impurity region and the fourth impurity region is connected to the second wiring,
the first impurity region, the second impurity region, the third impurity region, and the fourth impurity region are formed in any of a plurality of fins formed on the substrate, and
a number of first fins, of the plurality of fins, connected to the first wiring is less than a number of second fins adjacent to the first fins.
2. The semiconductor device according to claim 1 , further comprising:
a first guard ring portion surrounding the first diode in a plan view; and
a second guard ring portion surrounding the second diode in a plan view.
3. The semiconductor device according to claim 1 ,
wherein the first wiring and the second wiring are connected to each other.
4. The semiconductor device according to claim 1 , further comprising:
a third wiring formed in the substrate, the other of the first impurity region and the second impurity region being connected to the third wiring; and
a fourth wiring formed in the substrate, the other of the third impurity region and the fourth impurity region being connected to the fourth wiring.
5. The semiconductor device according to claim 4 , wherein the third wiring and the fourth wiring are connected to each other.
6. The semiconductor device according to claim 1 ,
wherein the first diode includes a fifth impurity region of the first conductive type, formed in the substrate,
wherein the second diode includes a sixth impurity region of the second conductive type, formed in the substrate,
wherein the first impurity region and the second impurity region are arranged separated from each other on the fifth impurity region, and
wherein the third impurity region and the fourth impurity region are arranged separated from each other on the sixth impurity region.
7. The semiconductor device according to claim 6 ,
wherein in a plan view, the first wiring extends in a direction different from a direction in which the first impurity region and the second impurity region are aligned, and
wherein in a plan view, the first wiring extends in a direction different from a direction in which the third impurity region and the fourth impurity region are aligned.
8. The semiconductor device according to claim 6 ,
wherein in a plan view, the first wiring extends in a direction parallel to a direction in which the first impurity region and the second impurity region are aligned, and
wherein in a plan view, the first wiring extends in a direction parallel to a direction in which the third impurity region and the fourth impurity region are aligned.
9. The semiconductor device according to claim 1 ,
wherein the first impurity region and the second impurity region are arranged adjacent to each other on the substrate, and
wherein the third impurity region and the fourth impurity region are arranged adjacent to each other on the substrate.
10. The semiconductor device according to claim 9 ,
wherein in a plan view, the first wiring extends in a direction different from a direction in which the first impurity region and the second impurity region are aligned, and
wherein in a plan view, the first wiring extends in a direction different from a direction in which the third impurity region and the fourth impurity region are aligned.
11. The semiconductor device according to claim 9 ,
wherein in a plan view, the first wiring extends in a direction parallel to a direction in which the first impurity region and the second impurity region are aligned, and
wherein in a plan view, the first wiring extends in a direction parallel to a direction in which the third impurity region and the fourth impurity region are aligned.
12. A semiconductor device comprising:
a substrate;
a first wiring formed in the substrate;
a second wiring formed in the substrate;
a first circuit region provided with a first power supply wiring, and a first ground wiring;
a second circuit region provided with a second power supply wiring, and a second ground wiring; and
a bidirectional diode connected between the first ground wiring and the second ground wiring, and provided with a first diode and a second diode, wherein:
the first diode includes
a first impurity region of a first conductive type, electrically connected to the second ground wiring, and
a second impurity region of a second conductive type, different from the first conductive type, electrically connected to the first ground wiring,
the second diode includes
a third impurity region of the second conductive type, electrically connected to the second ground wiring, and
a fourth impurity region of the first conductive type, electrically connected to the first ground wiring,
the first impurity region, the second impurity region, the third impurity region, or the fourth impurity region, or any combination of the impurity regions is connected to the first wiring,
one of the first impurity region and the second impurity region is connected to the first wiring,
one of the third impurity region and the fourth impurity region is connected to the second wiring,
the first impurity region, the second impurity region, the third impurity region, and the fourth impurity region are formed in any of a plurality of fins formed on the substrate, and
a number of first fins, of the plurality of fins, connected to the first wiring is less than a number of second fins adjacent to the first fins.
13. The semiconductor device according to claim 12 ,
wherein a power supply potential is supplied to the first wiring from a rear surface of the substrate, and
wherein the power supply potential is supplied to the second wiring from the rear surface of the substrate.
14. The semiconductor device according to claim 12 , wherein the first wiring and the second wiring are connected to each other.
15. The semiconductor device according to claim 12 , further comprising:
a third wiring formed in the substrate, the other of the first impurity region and the second impurity region being connected to the third wiring; and
a fourth wiring formed in the substrate, the other of the third impurity region and the fourth impurity region being connected to the fourth wiring.
16. The semiconductor device according to claim 15 , wherein the third wiring and the fourth wiring are connected to each other.
17. The semiconductor device according to claim 12 ,
wherein the first diode includes a fifth impurity region of the first conductive type, formed in the substrate,
wherein the second diode includes a sixth impurity region of the second conductive type, formed in the substrate,
wherein the first impurity region and the second impurity region are arranged separated from each other on the fifth impurity region, and
wherein the third impurity region and the fourth impurity region are arranged separated from each other on the sixth impurity region.
18. The semiconductor device according to claim 17 ,
wherein in a plan view, the first wiring extends in a direction different from a direction in which the first impurity region and the second impurity region are aligned, and
wherein in a plan view, the first wiring extends in a direction different from a direction in which the third impurity region and the fourth impurity region are aligned.
19. The semiconductor device according to claim 17 ,
wherein in a plan view, the first wiring extends in a direction parallel to a direction in which the first impurity region and the second impurity region are aligned, and
wherein in a plan view, the first wiring extends in a direction parallel to a direction in which the third impurity region and the fourth impurity region are aligned.
20. The semiconductor device according to claim 12 ,
wherein the first impurity region and the second impurity region are arranged adjacent to each other on the substrate, and
wherein the third impurity region and the fourth impurity region are arranged adjacent to each other on the substrate.
21. The semiconductor device according to claim 20 ,
wherein in a plan view, the first wiring extends in a direction different from a direction in which the first impurity region and the second impurity region are aligned, and
wherein in a plan view, the first wiring extends in a direction different from a direction in which the third impurity region and the fourth impurity region are aligned.
22. The semiconductor device according to claim 20 ,
wherein in a plan view, the first wiring extends in a direction parallel to a direction in which the first impurity region and the second impurity region are aligned, and
wherein in a plan view, the first wiring extends in a direction parallel to a direction in which the third impurity region and the fourth impurity region are aligned.
23. The semiconductor device according to claim 12 , further comprising:
a first guard ring portion surrounding the first diode in a plan view; and
a second guard ring portion surrounding the second diode in a plan view.
24. The semiconductor device according to claim 23 ,
wherein a power supply potential is supplied to the first wiring from above the first guard ring portion, and
wherein a power supply potential is supplied to the second wiring from above the second guard ring portion.
25. The semiconductor device according to claim 23 ,
wherein a power supply potential is supplied to the first wiring from outside the first guard ring portion in a plan view, and
wherein a power supply potential is supplied to the second wiring from outside the second guard ring portion in a plan view.