Semiconductor device including a suspended reinforcing layer and method of manufacturing same
A semiconductor device includes a substrate, semiconductor dies on the substrate, molding compound and a reinforcing layer suspended within the molding compound. The reinforcing layer may for example be a copper foil formed in the molding compound over the semiconductor dies during the compression molding process. The reinforcing layer may have a structural rigidity which provides additional strength to the semiconductor device. The reinforcing layer may also be formed of a thermal conductor to draw heat away from a controller die within the semiconductor device.
1. A semiconductor device, comprising:
a substrate;
one or more semiconductor dies mounted on a surface of the substrate;
bond wires electrically coupling the one or more semiconductor dies to the substrate;
molding compound encapsulating the one or more semiconductor dies and bond wires; and
a reinforcing layer comprising a polymer, the reinforcing layer suspended in the molding compound beneath a surface of the molding compound and above a surface of the one or more semiconductor dies, the reinforcing layer comprising a keep-out window above the bond wires, the reinforcing layer configured to add strength and rigidity to the semiconductor device.
2. The semiconductor device of claim 1 , wherein the reinforcing layer is further configured to conduct heat away from the one or more semiconductor dies.
3. The semiconductor device of claim 1 , wherein the reinforcing layer is further configured to shield the semiconductor device against at least one of electromagnetic interference and radio frequency interference.
4. The semiconductor device of claim 1 , wherein the one or more semiconductor dies comprise one or more memory dies.
5. The semiconductor device of claim 4 , wherein the one or more semiconductor dies comprise a controller die surface mounted to the substrate next to the one or more memory dies.
6. The semiconductor device of claim 5 , wherein the reinforcing layer is a flat planar layer over the one or more memory dies and the controller die.
7. The semiconductor device of claim 5 , wherein the one or more memory dies extend above the substrate more than does the controller die, and wherein the reinforcing layer comprises:
a first section spaced a first distance over the one or more memory dies;
a second section spaced a second distance over the controller die; and
a third section, angled with respect to the first and second sections and connected between the first and second sections.
8. The semiconductor device of claim 7 , wherein the first spacing of the first section above the one or more semiconductor dies is equal to the second spacing of the second section above the controller die.
9. The semiconductor device of claim 7 , wherein at least one of the first, second and third sections are flat planar sections.
10. The semiconductor device of claim 1 , wherein the reinforcing layer has a different thickness across at least one of its length and width.
11. The semiconductor device of claim 1 , wherein the reinforcing layer further comprises a plurality of openings across its length and width.
12. A semiconductor device, comprising:
a substrate;
one or more memory dies mounted on a surface of the substrate, the one or more memory dies extending a first height above the substrate;
a controller die mounted on the surface of the substrate, next to the one or more memory dies, the controller die extending a second height above the substrate, the second height being less than the first height;
molding compound encapsulating the semiconductor device; and
a reinforcing layer, suspended in the molding compound beneath a surface of the molding compound and above the one or more memory dies and controller die, the reinforcing layer configured to add strength and rigidity to the semiconductor device, and the reinforcing layer comprising:
a first section spaced a first distance over the one or more memory dies;
a second section spaced a second distance over the controller die; and
a third section, angled with respect to the first and second sections and connected between the first and second sections;
wherein the first distance of the first section above the one or more memory dies is equal to the second distance of the second section above the controller die.
13. The semiconductor device of claim 12 , wherein reinforcing layer is formed of copper.
14. The semiconductor device of claim 12 , wherein the reinforcing layer is formed of a metal configured to add strength and rigidity to the plurality of semiconductor devices, conduct heat away from the plurality of semiconductor devices and shield the plurality of semiconductor devices against electromagnetic interference.
15. The semiconductor device of claim 12 , further comprising bond wires extending between die bond pads of the one or more memory dies and the substrate.
16. The semiconductor device of claim 15 , wherein the reinforcing layer further comprises a keep-out window positioned over the bond wires.
17. The semiconductor device of claim 16 , wherein the bond wires extend into the keep-out window.
18. A semiconductor device, comprising:
a substrate;
one or more semiconductor dies mounted on a surface of the substrate;
bond wires electrically coupling the one or more semiconductor dies to the substrate;
molding compound encapsulating the one or more semiconductor dies and bond wires; and
means for reinforcing the semiconductor device suspended in the molding compound beneath a surface of the molding compound, the reinforcing means comprised of a polymer and including a first section positioned above a surface of the one or more semiconductor dies, and the reinforcing means comprising a keep-out window distinct from the first section above the bond wires.