Transversely-excited film bulk acoustic resonator fabrication using wafer-to-wafer bonding
An acoustic resonator device is formed using a wafer-to-wafer bonding process by etching recesses into a first surface of a piezoelectric substrate, a depth of the recesses greater than a target piezoelectric membrane thickness; then wafer-to-wafer bonding the first surface of the piezoelectric substrate to a handle wafer using a releasable bonding method. The piezoelectric substrate is then thinned to the target piezoelectric membrane thickness to form a piezoelectric plate and at least one conductor pattern is formed on the thinned piezoelectric plate. The side of the thinned piezoelectric plate having the conductor pattern is bonded to a carrier wafer using a metal-to-metal wafer bonding process and the handle wafer is removed.
1. A method comprising:
etching recesses into a first surface of a piezoelectric substrate, a depth of the recesses greater than a target piezoelectric membrane thickness;
bonding the first surface of the piezoelectric substrate to a handle wafer using a releasable bonding method;
thinning the piezoelectric substrate to the target piezoelectric membrane thickness to form a piezoelectric plate, the thinning of the piezoelectric substrate including forming openings extending through the thinned piezoelectric plate and to the handle wafer;
forming at least one conductor pattern on the thinned piezoelectric plate;
bonding a side of the thinned piezoelectric plate having the conductor pattern to a carrier wafer using a metal-to-metal wafer bonding process;
removing the handle wafer; and
after the handle wafer is removed, bonding contact pads of the carrier wafer to contact pads of a capping layer through the openings.
2. The method of claim 1 , wherein the forming of the at least one conductor pattern comprises forming an interdigital transducer (IDT) with interleaved fingers disposed on a location for a diaphragm to be formed over a cavity.
3. The method of claim 2 , wherein the bonding of the side of the thinned piezoelectric plate comprises forming the cavity under the thinned plate below the location for the diaphragm.
4. The method of claim 2 , wherein the forming of the at least one conductor pattern comprises forming a passivation layer over the interleaved fingers of the conductor pattern.
5. The method of claim 2 , wherein:
the piezoelectric plate and the conductor pattern are configured such that radio frequency signals applied to the conductor pattern excites a primary shear acoustic mode in the piezoelectric plate over the cavity, wherein a thickness of the diaphragm is selected to tune the primary shear acoustic modes in the piezoelectric plate.
6. The method of claim 1 , wherein the bonding of the side of the thinned piezoelectric plate comprises bonding a metal layer of the carrier wafer to a metal layer of the conductor pattern.
7. The method of claim 1 , wherein the etching of the recesses into the first surface of a piezoelectric substrate includes:
patterning the first surface of piezoelectric substrate; and
etching the patterned piezoelectric substrate to remove areas of the piezoelectric substrate to create openings for contact bumps.
8. The method of claim 1 , wherein a thickness of the thinned plate ts is between 100 nm and 1000 nm; a depth of the recesses tr is between 200 nm and 1500 nm; and the depth tr is greater than the thickness ts.
9. A method for fabricating an acoustic resonator comprising:
etching recesses into a first surface of a piezoelectric substrate, a depth of the recesses greater than a target thickness of a piezoelectric plate;
bonding the first surface of the piezoelectric substrate to a handle wafer using a releasable bond;
thinning the first surface of the piezoelectric substrate to thin the piezoelectric substrate to the target thickness to form the piezoelectric plate, the thinning of the piezoelectric substrate including forming openings extending through the thinned piezoelectric plate and to the handle wafer;
forming a first conductor pattern on the thinned first surface of the piezoelectric plate;
forming a second conductor pattern on the first conductor pattern;
bonding the second conductor pattern to a conductor pattern of a carrier wafer using a metal-to-metal wafer bonding process and so that the first conductor pattern is on a surface of the piezoelectric plate that is facing the carrier wafer;
removing the handle wafer; and
after the handle wafer is removed, bonding contact pads of the carrier wafer to contact pads of a capping layer through the openings.
10. The method of claim 9 , wherein the forming of the first conductor pattern comprises forming an interdigital transducer (IDT) with interleaved fingers disposed on a location for a diaphragm to be formed over a cavity; and wherein the forming of the second conductor pattern comprises forming contact pads on the first conductor pattern.
11. The method of claim 10 , wherein the bonding of the second conductor pattern to the conductor pattern of the carrier wafer forms the cavity under the piezoelectric plate below the location for the diaphragm.
12. The method of claim 10 , wherein:
the piezoelectric plate and the conductor pattern are configured such that radio frequency signals applied to the conductor pattern excites a primary shear acoustic mode in the piezoelectric plate over the cavity, wherein a thickness of the diaphragm is selected to tune the primary shear acoustic modes in the piezoelectric plate.
13. A method for forming an acoustic resonator comprising:
etching at least one recess into a first surface of a piezoelectric substrate, a depth of the at least one recess greater than a target piezoelectric membrane thickness;
bonding the first surface of the piezoelectric substrate to a handle wafer using a releasable bonding method;
thinning the piezoelectric substrate to the target piezoelectric membrane thickness to form a piezoelectric plate and to form at least one opening through the plate and to the handle wafer at the at least one recess;
forming at least two conductor patterns on the thinned piezoelectric plate, wherein forming the at least two conductor patterns comprises forming an interdigital transducer (IDT) with interleaved fingers disposed on a location for a diaphragm to be formed over a cavity;
bonding the at least two conductor patterns to a metal layer of a carrier wafer using a metal-to-metal wafer bonding process;
removing the handle wafer; and
after the handle wafer is removed, bonding at least one contact pad of the carrier wafer to at least one contact pad of a capping layer through the at least one opening.
14. The method of claim 13 , wherein the bonding of the at least two conductor patterns to the metal layer of the carrier wafer comprises forming the cavity between the diaphragm, the metal layer of the carrier wafer and a surface of the carrier wafer.
15. The method of claim 13 , wherein the forming of the at least two conductor patterns comprises forming a first conductor pattern including the IDT and forming a second conductor pattern on part of the first conductor pattern; and wherein the bonding of the at least two conductor patterns to the metal layer of the carrier wafer includes bonding the second conductor pattern to the metal layer of the carrier wafer using the metal-to-metal wafer bonding process.
16. The method of claim 13 , wherein:
the piezoelectric plate and the conductor pattern are configured such that radio frequency signals applied to the conductor pattern excites a primary shear acoustic mode in the piezoelectric plate over the cavity, wherein a thickness of the diaphragm is selected to tune the primary shear acoustic modes in the piezoelectric plate.