Interconnect structure and electronic device including the same
Provided are an interconnect structure and an electronic device including the same. The interconnect structure may include a conductive wiring having a certain pattern, a dielectric layer on side surfaces of the conductive wiring, a capping layer on the conductive wiring, and a graphene layer on the dielectric layer. The graphene layer may include a graphene material. A ratio of carbons having sp 3 bonds to carbons having sp 2 bonds in the graphene material is 1 or less.
1. An interconnect structure comprising:
a conductive wiring having a certain pattern;
a dielectric layer on side surfaces of the conductive wiring;
a capping layer on the conductive wiring; and
a graphene layer on the dielectric layer, wherein
the graphene layer comprises a graphene material, and
a ratio of carbons having sp 3 bonds to carbons having sp 2 bonds in the graphene material is 1 or less,
wherein the capping layer and the graphene layer comprise different materials,
wherein the graphene layer is on an upper surface of the dielectric layer and defines an opening over an upper surface of the conductive wiring, and
wherein the capping layer is on the upper surface of the conductive wiring and in the opening defined by the graphene layer, such that the graphene layer surrounds sidewalls of the capping layer.
2. The interconnect structure of claim 1 ,
wherein the graphene layer has a contact angle of about 80° to about 110°.
3. The interconnect structure of claim 1 ,
wherein a lower surface of the graphene layer, the upper surface of the conductive wiring, and a lower surface of the capping layer are coplanar.
4. The interconnect structure of claim 1 ,
wherein the graphene layer comprises about 1 atomic % to about 20 atomic % hydrogen.
5. The interconnect structure of claim 1 ,
wherein the graphene layer further comprises one or more of F, Cl, Br, and N, and
a content of the one or more of F, Cl, Br, and N is in a range of about 1 atomic % to about 20 atomic %.
6. The interconnect structure of claim 1 ,
wherein an intensity ratio of a D-band peak to a G-band peak in a Raman spectrum of the graphene layer is 3.5 or less.
7. The interconnect structure of claim 1 ,
wherein an intensity ratio of a 2D-band peak to a G-band peak in a Raman spectrum of the graphene layer is 0.2 or greater.
8. The interconnect structure of claim 1 ,
wherein an average grain size of the graphene material is about 0.5 nm to about 100 nm.
9. The interconnect structure of claim 1 ,
wherein a thickness of the graphene layer is about 1 nm to about 20 nm.
10. The interconnect structure of claim 1 ,
wherein a density of the graphene layer is about 1.6 g/cc to about 2.1 g/cc.
11. The interconnect structure of claim 1 ,
wherein the conductive wiring comprises one or more of Cu, Ru, Rh, Ir, Mo, W, Pd, Pt, Co, Ta, and Ti, or an alloy thereof, or a subcombination thereof, or a combination thereof.
12. The interconnect structure of claim 1 , further comprising:
a barrier layer between the dielectric layer and the conductive wiring.
13. The interconnect structure of claim 12 , further comprising:
a liner layer between the conductive wiring and the barrier layer.
14. The interconnect structure of claim 1 , wherein
the upper surface of the dielectric layer and the upper surface of the conductive wiring are coplanar.
15. An electronic device comprising:
a substrate; and
an interconnect structure on the substrate, wherein
the interconnect structure comprises a conductive wiring having a certain pattern, a dielectric layer on side surfaces of the conductive wiring, a capping layer on the conductive wiring, and a graphene layer on the dielectric layer, wherein
the graphene layer comprises a graphene material,
a ratio of carbons having sp3 bonds to carbons having sp2 bonds in the graphene material is 1 or less
wherein the capping layer and the graphene layer comprise different materials,
wherein the graphene layer is on an upper surface of the dielectric layer and defines an opening over an upper surface of the conductive wiring, and
wherein the capping layer is on the upper surface of the conductive wiring and in the opening defined by the graphene layer, such that the graphene layer surrounds sidewalls of the capping layer.
16. The electronic device of claim 15 ,
wherein the graphene layer has a contact angle of about 80° to about 110°.
17. The electronic device of claim 15 ,
wherein a lower surface of the graphene layer, the upper surface of the conductive wiring, and a lower surface of the capping layer are coplanar.
18. The electronic device of claim 15 ,
wherein the graphene layer comprises about 1 atomic % to about 20 atomic % hydrogen.
19. The electronic device of claim 15 ,
wherein the graphene layer further comprises one or more of F, Cl, Br, and N, and
a content of the one or more of F, Cl, Br, and N is in a range of about 1 atomic % to about 20 atomic %.
20. The electronic device of claim 15 ,
wherein an intensity ratio of a D-band peak to a G-band peak in a Raman spectrum of the graphene layer is 3.5 or less.
21. The electronic device of claim 15 ,
wherein an intensity ratio of a 2D-band peak to a G-band peak in a Raman spectrum of the graphene layer is 0.2 or greater.
22. The electronic device of claim 15 , wherein
the upper surface of the dielectric layer and the upper surface of the conductive wiring are coplanar.