Solid-state imaging device having optical black region, method of manufacturing the same, and electronic apparatus
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
1. A light detecting device, comprising:
a semiconductor substrate including a first side as a light incident side and a second side opposite to the first side;
photoelectric conversion regions disposed in the semiconductor substrate;
an element isolation region disposed in the semiconductor substrate,
wherein the photoelectric conversion regions are separated by the element isolation region, and
wherein the element isolation region includes a p-type semiconductor region;
a wiring layer disposed under the second side of the semiconductor substrate; and
a metal film disposed above the first side of the semiconductor substrate,
wherein the metal film contacts the p-type semiconductor region in an optical black level region disposed in the semiconductor substrate.
2. The light detecting device according to claim 1 , wherein the element isolation region includes a trench.
3. The light detecting device according to claim 2 , wherein the trench extends from the second side to the first side of the semiconductor substrate.
4. The light detecting device according to claim 2 , wherein an insulation film is disposed in the trench.
5. The light detecting device according to claim 1 , wherein the element isolation region is configured to apply a voltage.
6. The light detecting device according to claim 1 , wherein the optical black level region is an area outside an effective pixel region.
7. The light detecting device according to claim 6 , wherein the semiconductor substrate is covered by the metal film in the optical black level region.
8. The light detecting device according to claim 1 , further comprising:
an insulation film disposed between the metal film and the semiconductor substrate.
9. The light detecting device according to claim 8 , wherein the insulation film includes hafnium oxide.
10. The light detecting device according to claim 1 , wherein the metal film includes a barrier metal layer.
11. The light detecting device according to claim 10 , wherein the barrier metal layer includes titanium.
12. The light detecting device according to claim 1 , wherein the metal film includes tungsten.
13. The light detecting device according to claim 1 , wherein the wiring layer includes a gate electrode and a plurality of interconnection layers provided beneath the gate electrode.
14. The light detecting device according to claim 1 , wherein the metal film is connected to ground potential.
15. An electronic apparatus, comprising:
an optical lens;
a signal processing circuit; and
a light detecting device including:
a semiconductor substrate including a first side as a light incident side and a second side opposite to the first side;
photoelectric conversion regions disposed in the semiconductor substrate;
an element isolation region disposed in the semiconductor substrate,
wherein the photoelectric conversion regions are separated by the element isolation region, and
wherein the element isolation region includes a p-type semiconductor region;
a wiring layer disposed under the second side of the semiconductor substrate; and
a metal film disposed above the first side of the semiconductor substrate,
wherein the metal film contacts the p-type semiconductor region in an optical black level region disposed in the semiconductor substrate.
16. The electronic apparatus according to claim 15 , wherein the element isolation region includes a trench.
17. The electronic apparatus according to claim 16 , wherein the trench extends from the second side to the first side of the semiconductor substrate.
18. The electronic apparatus according to claim 16 , wherein an insulation film is disposed in the trench.
19. The electronic apparatus according to claim 15 , wherein the optical black level region is an area outside an effective pixel region.
20. The electronic apparatus according to claim 19 , wherein the semiconductor substrate is covered by the metal film in the optical black level region.