Capacitor, electronic device including the same, and method of manufacturing the same
Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.
1. A capacitor comprising:
a first thin-film electrode layer;
a second thin-film electrode layer;
a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and
an interlayer between the dielectric layer and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a crystal with a structure of a same type as and a different composition from a crystal structure of at least one of the first thin-film electrode layer, the second thin-film electrode layer, or the dielectric layer,
wherein the interlayer comprises at least one of a first anionized layer, a second anionized layer, or a first neutral layer,
the first anionized layer including at least one of a monovalent cation, divalent cation, or trivalent cation of an atomic weight of 20 or more,
the second anionized layer including a monovalent cation, and
the first neutral layer including a plurality of trivalent cations, and
wherein a thickness of the interlayer is less than a thickness of the dielectric layer.
2. The capacitor of claim 1 , wherein the first anionized layer includes a composition represented by [B1O 2 ] −a , wherein B1 represents the least one monovalent cation, divalent cation, or trivalent cation, and
a is 1, 2, or 3.
3. The capacitor of claim 2 , wherein B1 is at least one of Li, Na, K, Rb, Cs, Mg, Be, Ba, Ca, Ga, or In.
4. The capacitor of claim 1 , wherein the first anionized layer includes a composition represented by at least one of [GaO 2 ] − , [InO 2 ] − , [BeO 2 ] −2 , [MgO 2 ] −2 , [BaO 2 ] −2 , [CaO 2 ] −2 , [LiO 2 ] −3 , [NaO 2 ] −3 , [KO 2 ] −3 , or [RbO 2 ] −3 .
5. The capacitor of claim 1 , wherein the interlayer comprises the first anionized layer, and further comprises:
a second neutral layer including a composition represented by [A1O], wherein A1 is a divalent cation.
6. The capacitor of claim 5 , wherein A1 is at least one of Sr, Ca, Ba, Mg, or Be.
7. The capacitor of claim 5 , wherein the composition of the second neutral layer is represented by at least one of [SrO], [CaO], [BaO], [MgO], or [BeO].
8. The capacitor of claim 1 , wherein
the interlayer comprises the first anionized layer and a second neutral layer,
the first anionized layer and the second neutral layer are alternately stacked, and
the first anionized layer and the second neutral layer comprise different metals from each other.
9. The capacitor of claim 1 , wherein the interlayer includes a metal oxide having a perovskite-type crystal structure and is represented by Formula 1:
[A1B1O x ] <Formula 1>
wherein, A1 is a divalent cation, B1 is the at least one monovalent cation, divalent cation, or trivalent cation, and 2.5<x≤3.0.
10. The capacitor of claim 1 , wherein
the interlayer includes a metal oxide represented by at least one of
[SrGaO x ], [CaGaO x ], [BaGaO x ], [PbGaO x ], [SrInO x ], [CaInO x ], [BaInO x ], [PbInO x ], [SrBeO x ], [CaBeO x ], [BaBeO x ], [PbBeO x ], [SrMgO x ], [CaMgO x ], [BaMgO x ], [PbMgO x ], [SrBaO x ], [CaBaO x ], [PBBaO x ], [SrCaO x ], [BaCaO x ], [PbCaO x ], [SrLiO x ], [CaLiO x ], [BaLiO x ], [PbLiO x ], [SrNaO x ], [CaNaO x ], [BaNaO x ], [PbNa x ], [SrKO x ], [CaKO x ], [BaKO x ], [PbKO x ], [SrRbO x ], [CaRbO x ], [BaRbO x ], or [PbRbO x ], and
wherein 2.5<x≤3.0.
11. The capacitor of claim 1 , wherein the interlayer includes the second anionized layer, and the second anionized layer includes a composition represented by [A 20 ]-, wherein A 2 is the monovalent cation of the second anionized layer.
12. The capacitor of claim 11 , wherein A2 is at least one of Li, Na, K, Rb, or Cs.
13. The capacitor of claim 11 , wherein the composition of the second anionized layer is represented by at least one of [LiO] − , [NaO] − , [KO] − , or [RbO] − .
14. The capacitor of claim 1 , wherein the interlayer comprises the second anionized layer and further comprises:
a third neutral layer including a composition represented by [B2O 2 ], wherein B2 is a tetravalent cation.
15. The capacitor of claim 14 , wherein B2 is at least one of Ti, Hf, or Zr.
16. The capacitor of claim 14 , wherein the composition of the third neutral layer is represented by at least one of [TiO 2 ], [ZrO 2 ], or [HfO 2 ].
17. The capacitor of claim 1 , wherein the interlayer includes a metal oxide having a perovskite-type crystal structure and is represented by Formula 2:
[A2B2O x ] <Formula 2>
wherein, in Formula 2, A2 is the monovalent cation of the second anionized layer, B2 is a tetravalent cation, and 2.5≤x≤3.0.
18. The capacitor of claim 1 , wherein the interlayer includes a metal oxide represented by at least one of [LiTiO x ], [NaTiO x ], [KTiO x ], [RbTiO x ], [LiZrO x ], NaZrO x ], [KzrO x ], [RbZrO x ], [LiHfO x ], [NaHfO x ], [KhfO x ], or [RbHfO x ], and
wherein 2.5<x≤3.0.
19. The capacitor of claim 1 , wherein the first neutral layer includes a metal oxide that has a perovskite-type crystal structure and is represented by Formula 3:
[A3B3O 3 ] <Formula 3>
wherein, in Formula 3, A3 and B2 are the plurality of trivalent cations.
20. The capacitor of claim 1 , wherein the interlayer includes a metal oxide represented by at least one of [ScAlO 3 ], [YalO 3 ], [LaAlO 3 ], [CeAlO 3 ], [PrAlO 3 ], [NdAlO 3 ], [SmAlO 3 ], [DyAlO 3 ], [ScGaO 3 ], [YgaO 3 ], [LaGaO 3 ], [CeGaO 3 ], [PrGaO 3 ], [NdGaO 3 ], [SmGaO 3 ], [DyGaO 3 ], [ScInO 3 ], [YinO 3 ], [LaInO 3 ], [CeInO 3 ], [PrInO 3 ], [NdInO 3 ], [SmInO 3 ], or [DyInO 3 ].
21. The capacitor of claim 1 , wherein the first neutral layer comprises:
a first cationized layer including a composition represented by [A3O] + ; and
a third anionized layer including a composition represented by [B3O 2 ] − ,
wherein A3 and B3 are the plurality of trivalent cations, and A3 and B3 are different metals from each other.
22. The capacitor of claim 21 , wherein
A3 is at least one of Sc, Y, La, Ce, Pr, Nd, Sm, or Dy, and
B3 is at least one of Al, Ga, or In.
23. The capacitor of claim 21 , wherein
the composition of the first cationized layer is represented by at least one of [ScO] + , [YO] + , [LaO] + , [CeO] + , [PrO] + , [NdO] + , [SmO] + , or [DyO] + ; and
the composition of the third anionized layer is represented by at least one of [AlO 2 ] − , [GaO 2 ] − , or [InO 2 ] − .
24. The capacitor of claim 1 , wherein
the interlayer comprises one to three unit cells,
the thickness of the interlayer is about 1Å to about 15Å,
a Schottky barrier height (SBH) between at least one of the first thin-film electrode layer and the dielectric layer or the second thin-film electrode layer and the dielectric layer is 1.5 eV or more.
25. The capacitor of claim 1 , wherein the dielectric layer includes an oxide that has a perovskite-type crystal structure and is represented by Formula 4:
A4B4O 3 <Formula 4>
wherein, in Formula 4, A4 is a monovalent, divalent, or trivalent cation, and B4 is a trivalent, tetravalent, or pentavalent cation.
26. The capacitor of claim 1 , wherein the dielectric layer includes an oxide represented by at least one of SrTiO 3 , CaTiO 3 , BaTiO 3 , SrHfO3, CaHfO 3 , BaHfO 3 , SrZrO 3 , CaZrO 3 , BaZrO 3 , PbTiO 3 , NaNbO 3 , NaTaO 3 , RbTaO 3 , RbNbO 3 , RbTaO 3 or EuTiO 3 .
27. The capacitor of claim 1 , wherein
the thickness of the dielectric layer is about 10 nm to about 100 nm,
the first thin-film electrode layer and the second thin-film electrode layer each independently have a thickness of about 10 nm to about 1000 nm, and
at least one of the first thin-film electrode layer and the second thin-film electrode layer has a perovskite-type crystal structure.
28. An electronic device comprising the capacitor of claim 1 .
29. The electronic device of claim 28 , wherein the electronic device is a semiconductor device.
30. The electronic device of claim 29 , wherein the semiconductor device is a memory device.
31. A method of manufacturing a capacitor, the method comprising:
providing a thin-film electrode layer;
epitaxially growing an interlayer on a surface of the thin-film electrode layer;
disposing a dielectric layer on the interlayer such that a thickness of the dielectric layer is greater than a thickness of the interlayer; and
disposing another thin-film electrode layer on the dielectric layer,
wherein the interlayer has a crystal with a structure of the same type as and a different composition from a crystal structure of at least one of the thin-film electrode layer or the dielectric layer that contact the interlayer,
the interlayer comprises at least one of a first anionized layer, a second anionized layer, or a first neutral layer,
the first anionized layer includes at least one of a monovalent cation, a divalent cation, or a trivalent cation that has an atomic weight of 20 or more,
the second anionized layer includes a monovalent cation, and
the first neutral layer includes a plurality of trivalent cations.
32. A capacitor including:
first and second thin-film electrode layers, at least one of the first and second thin-film electrode layers including a conductive perovskite-type crystal structure;
a dielectric layer between the first and second thin-film layers, the dielectric layer including a dielectric perovskite-type crystal structure; and
an interlayer connecting the dielectric perovskite-type crystal structure and the conductive perovskite-type crystal structure, wherein a thickness of the interlayer is less than a thickness of the dielectric layer,
wherein, one of the dielectric perovskite-type crystal structure or the conductive perovskite-type crystal structure includes a ternary oxide including an A cation located at a cuboctahedral site and a B cation located at a octahedral site, and
wherein the interlayer includes a first cation located at the cuboctahedral site and a second cation located at the octahedral site, and
wherein the first cation has a lower valency than the A cation at a corresponding A-cation site of the ternary oxide and/or the second cation has a lower valency than the B cation at a corresponding B-cation site of the ternary oxide.
33. The capacitor of claim 32 , wherein the A cation is a divalent cation and the first cation is a monovalent cation.
34. The capacitor of claim 32 , wherein the B cation is a tetravalent cation, and the second cation is at least one of a monovalent cation, divalent cation, or trivalent cation.
35. The capacitor of claim 32 , wherein
the interlayer includes an anionized layer and a neutral layer,
the anionized layer including the first cation and the second cation,
the neutral layer including an oxide with a perovskite-type crystal structure,
the neutral layer has cations of a same valency as the A cation and the B cation.
36. The capacitor of claim 32 , wherein
the interlayer comprises one to three unit cells, and
a Schottky barrier height (SBH) between the dielectric perovskite-type crystal structure and the conductive perovskite-type crystal structure connected by the interlayer is 1.5 eV or more.