3D semiconductor device and structure with bonding
A 3D semiconductor device, the device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer, the third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, and where the device includes a plurality of capacitors.
1. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said device comprises a plurality of capacitors; and
power distribution lines,
wherein said capacitors are connected to at least one of said power distribution lines.
2. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said device comprises a plurality of capacitors, and
wherein said second level comprises at least one ElectroStatic Discharge (ESD) circuit.
3. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions,
wherein said device comprises a plurality of capacitors, and
wherein at least one of said second transistors comprises a high-k metal gate structure.
4. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions, and
wherein said second level comprises Radio Frequency (RF) circuits adapted for data communication.
5. The device according to claim 4 , further comprising:
a plurality of capacitors.
6. The device according to claim 4 ,
wherein said second level comprises a rectangular guard-ring structure, and
wherein said second transistors and said second interconnections are surrounded by said guard-ring structure.
7. The device according to claim 4 ,
wherein at least one of said second transistors comprises a raised source and a raised drain.
8. The device according to claim 4 ,
wherein said second level comprises at least one ElectroStatic Discharge (ESD) circuit.
9. The device according to claim 4 , further comprising:
at least one memory array,
wherein said second level comprises said at least one memory array,
wherein said first level comprises at least one control circuit, and
wherein said at least one control circuit controls read operations of said at least one memory array.
10. The device according to claim 4 , further comprising:
power distribution lines; and
a plurality of capacitors,
wherein at least one of said plurality of capacitors are connected to at least one of said power distribution lines.
11. A 3D semiconductor device, the device comprising:
a first level,
wherein said first level comprises a first layer, said first layer comprising first transistors, and
wherein said first level comprises a second layer, said second layer comprising first interconnections;
a second level overlaying said first level,
wherein said second level comprises a third layer, said third layer comprising second transistors, and
wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and
a plurality of connection paths,
wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors,
wherein said second level is bonded to said first level,
wherein said bonded comprises oxide to oxide bond regions,
wherein said bonded comprises metal to metal bond regions, and
wherein at least one of said first transistors comprises a transistor channel, said transistor channel comprising at least 1% non-silicon atoms.
12. The device according to claim 11 ,
wherein said first level comprises first dice lines,
wherein said second level comprises second dice lines, and
wherein said second dice lines are aligned to said first dice lines with a less than 1 micron alignment error.
13. The device according to claim 11 , further comprising:
power distribution lines; and
a plurality of capacitors,
wherein at least one of said plurality of capacitors is connected to at least one of said power distribution lines.
14. The device according to claim 11 ,
wherein said second level comprises Radio Frequency (RF) circuits adapted for data communication.
15. The device according to claim 11 , further comprising:
at least one memory array,
wherein said second level comprises said at least one memory array,
wherein said first level comprises at least one control circuit, and
wherein said at least one control circuit controls at least part of data written to said at least one memory array.
16. The device according to claim 11 ,
wherein at least one of said second transistors is a FinFET type transistor.