Light emitting diodes with enhanced thermal sinking and associated methods of operation
Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.
1. A solid state lighting (SSL) device, comprising:
a substrate;
a plurality of SSL dies carried by the substrate, wherein each of the plurality of SSL dies includes an emissions area and is encapsulated by and in direct contact with a discrete layer of insulating material, the layer of insulating material being at least partially transparent;
a monolithic layer of conduction material encapsulating each of the plurality of SSL dies and completely filling a space laterally separating adjacent ones of the plurality of SSL dies, the conduction material in direct contact with the substrate under the space;
a converter material disposed over the monolithic layer of conduction material and positioned in line with the emissions area of each of the plurality of SSL dies such that emissions from the plurality of SSL dies pass through the converter material.
2. The SSL device of claim 1 wherein the substrate has a thermal conductivity greater than about 1.0 W/(m·K).
3. The SSL device of claim 1 wherein the conduction material has a thermal conductivity greater than about 1.0 W/(m·K).
4. The SSL device of claim 1 wherein the conduction material is at least partially transparent.
5. The SSL device of claim 1 wherein the monolithic layer of conduction material includes a first portion generally corresponding to a first SSL of the plurality, a second portion generally corresponding to a second SSL of the plurality, and a third portion corresponding to the space.
6. The SSL device of claim 1 wherein the substrate includes at least one of silicon (Si), gallium nitride (GaN), aluminum nitride (AlN), copper (Cu), aluminum (Al), tungsten (W), stainless steel (Fe), diamond (C), glass (SiO 2 ), silicon carbide (SiC), and aluminum oxide (Al 2 O 3 ).
7. The SSL device of claim 1 wherein the converter material includes a plurality of conductive materials positioned therein.
8. The SSL device of claim 1 wherein each of the plurality of SSL dies includes an N-type gallium nitride (GaN) material, an indium gallium nitride (InGaN) material, and a P-type GaN material on one another in series.
9. The SSL device of claim 1 wherein the converter material includes a phosphor.
10. The SSL device of claim 9 wherein the phosphor includes at least one of cerium(III)-doped yttrium aluminum garnet (“YAG”), neodymium-doped YAG, neodymium-chromium double-doped YAG, erbium-doped YAG, ytterbium-doped YAG, neodymium-cerium double-doped YAG, holmium-chromium-thulium triple-doped YAG, thulium-doped YAG, chromium(IV)-doped YAG, dysprosium-doped YAG, samarium-doped YAG, and terbium-doped YAG, CaS:Eu, CaAlSiN 3 :Eu, Sr 2 Si 5 N 8 :Eu, SrS:Eu, Ba 2 Si 5 N 8 :Eu, Sr 2 SiO 4 :Eu, SrSi 2 N 2 O 2 :Eu, SrGa 2 S 4 :Eu, SrAl 2 O 4 :Eu, Ba 2 SiO 4 :Eu, Sr 4 Al 14 O 25 :Eu, SrSiAl 2 O 3 N:Eu, BaMgAl 10 O 17 :Eu, Sr 2 P 2 O 7 :Eu, BaSO 4 :Eu, and SrB 4 O 7 :Eu.
11. The SSL device of claim 1 wherein the conductive material includes at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), and zinc oxide (ZnO).
12. A solid state lighting (SSL) device, comprising:
a substrate;
a plurality of SSL dies carried by the substrate, wherein each of the plurality of SSL dies includes an emissions area and is encapsulated by and in direct contact with a discrete layer of insulating material, the layer of insulating material being at least partially transparent;
a conduction material encapsulating each of the plurality of SSL dies and disposed in a space laterally separating adjacent ones of the plurality of SSL dies, the conduction material in direct contact with the substrate under the space;
a converter material disposed over each of the plurality of SSL dies and in direct contact with the conduction material, the converter material positioned in line with the emissions area of each of the plurality of SSL dies such that emissions from the plurality of SSL dies pass through the converter material.
13. The SSL device of claim 12 wherein the substrate has a thermal conductivity greater than about 1.0 W/(m·K).
14. The SSL device of claim 12 wherein the conduction material has a thermal conductivity greater than about 1.0 W/(m·K).
15. The SSL device of claim 12 wherein the conduction material is at least partially transparent.
16. The SSL device of claim 12 wherein the conduction material includes a first portion generally corresponding to a first SSL of the plurality, a second portion generally corresponding to a second SSL of the plurality, and a third portion disposed in an aperture located in the space.
17. The SSL device of claim 12 wherein the substrate includes at least one of silicon (Si), gallium nitride (GaN), aluminum nitride (AlN), copper (Cu), aluminum (Al), tungsten (W), stainless steel (Fe), diamond (C), glass (SiO 2 ), silicon carbide (SiC), and aluminum oxide (Al 2 O 3 ).
18. The SSL device of claim 12 wherein the converter material includes a plurality of conductive materials positioned therein.
19. The SSL device of claim 12 wherein each of the plurality of SSL dies includes an N-type gallium nitride (GaN) material, an indium gallium nitride (InGaN) material, and a P-type GaN material on one another in series.
20. The SSL device of claim 12 wherein the converter material includes a phosphor.