IP Library › Granted Patent US 12,431,491
Granted Patent B2
US 12,431,491 · App. 17/607,462 · Granted Sep 30, 2025

Silicon oxide composite for lithium secondary battery anode material and method for manufacturing same

Inventors: Seung Min Oh (Siheung-Si, KR); Jeong Gyu Park (Siheung-Si, KR); Hyeon Soo Park (Siheung-Si, KR); Young Min Jeon (Siheung-Si, KR); Jong Chan Lim (Siheung-Si, KR)
Assignee: DAEJOO ELECTRONIC MATERIALS CO., LTD.
H01M4/48H01M4/04H01M4/131H01M4/1391H01M4/364H01M10/052H01M2004/021
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Quick Facts
Patent No.
US 12,431,491
App. No.
17/607,462
Granted
Sep 30, 2025
Kind
B2
Abstract

The present invention relates to a silicon oxide composite for a lithium secondary battery anode material and a method for manufacturing same and, more specifically, to a silicon oxide composite for a lithium secondary battery anode material and a method for manufacturing same, wherein the silicon oxide composite comprises a Si cluster and MgxSiOy(0≤x≤3, 0≤y≤5) formed on a peripheral portion of the Si cluster.

Claims (15)

1. A silicon oxide composite for a lithium secondary battery anode material, comprising:

a Si cluster; and

magnesium silicate, which is indicated as MgxSiOy (0.5≤x≤2, 2.5≤y≤4), formed on a peripheral portion of the Si cluster, wherein the Si; cluster and the Mg x SiO y (0.5≤x≤2, 2.5≤y≤4) formed on a peripheral portion of the Si cluster form a core-shell structure,

wherein the Si cluster is prepared by using a Si/SiO x /SiO 2 raw material powder mixture, and wherein the silicon oxide composite comprises Mg in a ratio of 2 to 10 parts by weight relative to 100 parts by weight of the total weight of the silicon oxide composite.

2. The silicon oxide composite of claim 1 , wherein the domain size of the Si (220) by the Si cluster is 12 nm or less.

3. The silicon oxide composite of claim 1 , wherein in X-ray diffraction pattern analysis, a peak belonging to a Si crystal appears in a range of a diffraction angle 28°<2θ<29°, and wherein a peak belonging to a MgSiO 3 crystal appears in a range of a diffraction angle 30.5°<2θ<31.5°.

4. The silicon oxide composite of claim 1 , wherein in XRD analysis, full width at half maximum (FWHM) of Si (111) by the Si cluster is in a range of a 0.7 (deg) to 1.5 (deg).

5. The silicon oxide composite of claim 1 , wherein the silicon oxide composite comprises a Mg 2 SiO 4 (foresterite) crystal, and the content of the Mg 2 SiO 4 (foresterite) crystal is smaller than that of a MgSiO 3 (enstatite) crystal.

6. The silicon oxide composite of claim 1 , wherein the peak intensity ratio between the Mg 2 SiO 4 (foresterite) crystal phase and the MgSiO 3 (enstatite) crystal phase (I Mg2SiO4 /I MgSiO3 ) is in a range of 0 to 0.5 or less.

7. The silicon oxide composite of claim 1 , wherein the silicon oxide composite comprises a carbon film on the surface.

8. The silicon oxide composite of claim 7 , wherein an average thickness of the carbon film is in a range of 5 nm to 100 nm.

9. An anode for a lithium secondary battery provided with the silicon oxide composite for a secondary battery anode material according to claim 1 .

10. The anode for a lithium secondary battery of claim 9 , wherein when the battery is charged twice, the peak in the vicinity of 0.45 V in the dQ/dV curve is greater than that at 0.25 V.

11. The anode for a lithium secondary battery of claim 10 , wherein after the battery is discharged twice, the XRD peak derived from Mg x SiO y does not appear.

12. A lithium secondary battery, which comprises the anode for a lithium secondary battery provided with a silicon oxide composite for a secondary battery anode material of claim 9 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2021
From: OH, SEUNG MIN; PARK, JEONG GYU; PARK, HYEON SOO; JEON, YOUNG MIN; LIM, JONG CHAN
To: DAEJOO ELECTRONIC MATERIALS CO., LTD.
Reel/Frame 057957/0705 →
Priority Claims (1)
KR 10-2019-0049943 · Apr 29, 2019 · national
Continuity (1)
Related Publication 20220209228A1 · Jun 30, 2022
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