High-temperature chip
One aspect relates to a high-temperature sensor, having a coated substrate. The substrate contains a zirconium oxide or a zirconium oxide ceramic, at least one resistance structure and at least two connection contacts. The connection contacts electrically contact the resistance structure. The substrate is coated with an insulation layer. The insulation layer contains a metal oxide layer, the resistance structure and the free regions of the insulation layer, on which no resistance structure is arranged, are coated at least in regions with a ceramic intermediate layer, and a protective layer and/or a cover is arranged on the ceramic intermediate layer. At least one opening is formed in the insulation layer, which exposes at least sections of a surface of the substrate.
1. A temperature sensor comprising:
a coated substrate, wherein the substrate contains a zirconium oxide or a zirconium oxide ceramic;
at least one resistance structure; and
at least two terminal contacts;
wherein the terminal contacts make electrical contact with the resistance structure;
wherein the substrate is coated with an insulation layer;
wherein the insulation layer contains a metal oxide layer, the resistance structure and the exposed areas of the insulation layer, on which no resistance structure is arranged, are at least partially coated with a ceramic intermediate layer, and a protective layer or a cover is arranged on the ceramic intermediate layer; and
wherein at least one opening is formed in the insulation layer, which opening exposes a surface of the substrate at least in sections.
2. The temperature sensor according to claim 1 , wherein the at least one opening is designed in the shape of slots, wherein the width of the slots is between 5 μm and 1 mm.
3. The temperature sensor according to claim 1 , wherein the at least one opening is designed in the shape of slots, wherein the width of the slots is between 20 μm and 100 μm.
4. The temperature sensor according to claim 2 , wherein the slots of the at least one opening have longitudinal extensions formed parallel or perpendicular to a longitudinal extension of the substrate, or wherein the slots of the at least one opening have longitudinal extensions formed parallel to one another.
5. The temperature sensor according to claim 1 , wherein the at least one opening exposes at least one side surface of the substrate.
6. The temperature sensor according to claim 1 , wherein the at least one opening completely surrounds the resistance structure.
7. The temperature sensor according to claim 1 , wherein the at least one opening partially frames at least one of the two terminal contacts of the resistance structure.
8. The temperature sensor according to claim 1 , wherein the at least one opening is filled with a material of the protective layer.
9. The temperature sensor according to claim 1 , wherein the zirconium oxide or the zirconium oxide in the zirconium oxide ceramic is stabilized with oxides of a trivalent and a pentavalent metal, or at least one electrode is arranged on at least one terminal contact next to the resistance structure on the insulation layer, wherein the electrode or electrodes are formed as one piece with the resistance structure.
10. The temperature sensor according to claim 1 , wherein the insulation layer is an aluminum oxide layer.
11. The temperature sensor according to claim 1 , wherein the ceramic intermediate layer has a thickness between 1 μm and 50 μm.
12. The temperature sensor according to claim 1 , wherein the ceramic intermediate layer has a thickness between 4 μm and 10 μm.
13. The temperature sensor according to claim 1 , wherein the protective layer includes a glass or a glass ceramic or the cover is a ceramic plate.
14. The temperature sensor according to claim 1 , wherein the resistance structure includes a platinum material or a platinum alloy, or a platinum-based alloy.