Substrate processing apparatus and substrate processing method
View Patent ↗The present invention relates to a substrate processing apparatus and a substrate processing method. A substrate processing apparatus according to an embodiment of the present invention includes a chamber; a susceptor located inside the chamber to support a substrate to be processed; a first plasma control plate located in an upper area of a space inside the chamber; a second plasma control plate located below the first plasma control plate while being spaced apart from the first plasma control plate by a predetermined distance; and a plasma control power source connected to the first plasma control plate and the second plasma control plate.
1. A substrate processing apparatus comprising:
a chamber;
a plasma excitation unit located on an upper part of the chamber;
a susceptor located inside the chamber to support a substrate;
a first plasma control plate located above the susceptor and forming an excitation space between the upper part of the chamber and thereof;
a second plasma control plate located below the first plasma control plate and forming a control space between the first plasma control plate and thereof;
a plasma control power supply applying voltage to the first plasma control plate and the second plasma control plate;
an upper gas supply source supplying an excitation gas to the excitation space;
a lower gas supply source supplying a process gas to a process space between the second plasma control plate and the susceptor; and
a control unit configured to:
control the lower gas supply source so that the process gas is supplied to the process space to form a reaction layer on the substrate,
control the upper gas supply source so that the excitation gas is supplied to the excitation space, and
control the plasma control power so that a negative voltage is applied to the first plasma control plate and a positive voltage is applied to the second plasma control plate to etch the reaction layer.
2. The substrate processing apparatus of claim 1 , wherein each of the negative voltage and the positive voltage are a pulsed D.C. voltage.
3. The substrate processing apparatus of claim 1 , wherein the control unit controls a first plasma control power source and a second plasma control power source so that when the negative voltage is applied to the first plasma control plate, the voltage applied to the second plasma control plate changes from 0 V to the positive voltage and from the positive voltage to 0 V.
4. The substrate processing apparatus of claim 1 , wherein the process gas includes an inert gas, nitrogen, chlorine, and silicon.
5. The substrate processing apparatus of claim 1 , wherein the reaction layer comprises:
an oxygen layer formed on the substrate in atomic units; and
a silicon layer formed on an upper surface of the oxygen layer in atomic units.