Resist material and pattern forming method
It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R 1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R 1 may be the same or different. R 11 represents a hydrogen atom or an alkyl group optionally having a substituent. R 2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y 1 represents a single bond or a linking group.
1. A resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101):
wherein R 1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R 1 may be the same or different; R 11 represents a hydrogen atom or an alkyl group optionally having a substituent; R 2 represents a fluorine atom, a chlorine atom, or a bromine atom; and Y 1 represents a single bond or a linking group.
2. The resist material according to claim 1 , wherein the polymer further comprises a unit derived from a structure represented by the following formula (102):
wherein X 1 represents an alkyl group optionally having a substituent, an acyl group optionally having a substituent, or an allyl group optionally having a substituent; R 3 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y 2 represents a single bond or a linking group.
3. The resist material according to claim 1 , wherein the polymer further comprises a unit derived from a structure represented by the following formula (103):
wherein X 2 represents an aryl group optionally having a substituent; R 4 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y 3 represents a single bond or a linking group.
4. The resist material according to claim 1 , wherein, in the formula (101), R 11 is a hydrogen atom.
5. The resist material according to claim 2 , wherein, in the formula (102), R 3 represents a fluorine atom, a chlorine atom, or a bromine atom.
6. A resist film formed from the resist material according to claim 1 , wherein the resist film is formed by applying the resist material on a substrate and heating.
7. A pattern forming method, comprising:
applying the resist material according to claim 1 onto a substrate to form a resist film,
exposing, and
developing.
8. The pattern forming method according to claim 7 , further comprising:
introducing a metal before the developing.
9. The pattern forming method according to claim 7 , wherein, in the exposing, an electromagnetic wave having a wavelength of 15 nm or less is applied to the resist film.
10. The pattern forming method according to claim 7 , wherein a developing solution used in the developing comprises at least one selected from the group consisting of an ester compound, a ketone compound, and an alcohol compound.
11. A resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101), wherein the polymer further comprises a unit derived from a structure represented by the following formula (102):
wherein R 1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R 1 may be the same or different; R 11 represents a hydrogen atom or an alkyl group optionally having a substituent; R 2 represents a fluorine atom, a chlorine atom, or a bromine atom; and Y 1 represents a single bond or a linking group;
wherein X 1 represents an alkyl group optionally having a substituent, an acyl group optionally having a substituent, or an allyl group optionally having a substituent; R 3 represents a fluorine atom, a chlorine atom, or a bromine atom, or a halogenated alkyl group; and Y 2 represents a single bond or a linking group.
12. The resist material according to claim 11 , wherein the polymer further comprises a unit derived from a structure represented by the following formula (103):
wherein X 2 represents an aryl group optionally having a substituent; R 4 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y 3 represents a single bond or a linking group.
13. The resist material according to claim 11 , wherein, in the formula (101), R 11 is a hydrogen atom.
14. A resist film formed from the resist material according to claim 11 , wherein the resist film is formed by applying the resist material on a substrate and heating.
15. A pattern forming method, comprising:
applying the resist material according to claim 11 onto a substrate to form a resist film,
exposing, and
developing.
16. The pattern forming method according to claim 15 , further comprising:
introducing a metal before the developing.
17. The pattern forming method according to claim 15 , wherein, in the exposing, an electromagnetic wave having a wavelength of 15 nm or less is applied to the resist film.
18. The pattern forming method according to claim 15 , wherein a developing solution used in the developing comprises at least one selected from the group consisting of an ester compound, a ketone compound, and an alcohol compound.