Semiconductor device performing row hammer refresh operation
An apparatus includes a memory cell array including a plurality of word lines each coupled to a plurality of memory cells, and a control circuit which is configured to activate first and second internal signals in a time-division manner in response to a first external command A first number of the word lines arc selected in response to the first internal signal, and a second number of the word line is selected in response to the second internal signal. The second number is smaller than the first number.
1. A method comprising:
receiving a first external command;
consecutively activating a row active signal;
synchronously activating a first internal signal and a refresh signal responsive to a first activation of the row active signal; and
activating a row hammer refresh signal responsive to a second activation of the row active signal.
2. The method of claim 1 , further comprising:
receiving a temperature signal indicating a low temperature state;
receiving a second external command;
consecutively activating the row active signal; and
activating the row hammer refresh signal twice responsive to a second activation of the row active signal.
3. The method of claim 2 , wherein the temperature signal is received by a state control circuit.
4. The method of claim 2 , wherein the temperature signal is provided by a mode register.
5. The method of claim 2 , wherein the first internal signal and the refresh signal are activated responsive to a first activation of the row active signal when an external command has been received a predetermined number of times.
6. The method of claim 1 , further comprising:
receiving a temperature signal indicating a high temperature state;
receiving a second external command;
consecutively activating the row active signal; and
synchronously activating a first internal signal and a refresh signal responsive to a first activation of the row active signal.
7. The method of claim 6 , wherein the row hammer refresh signal is activated responsive to a second activation of the row active signal when an external command has been received a predetermined number of times.
8. The method of claim 1 , further comprising:
generating a refresh address and a row hammer refresh address;
providing the refresh address when the first internal signal and the refresh signal are activated; and
providing the row hammer refresh address when the row hammer refresh signal is activated.
9. The method of claim 8 , wherein the refresh address corresponds to a plurality of word lines in a memory bank and the row hammer refresh address corresponds to a single word line in the memory bank.
10. The method of claim 1 , further comprising receiving a temperature signal indicating a normal temperature state.
11. A method comprising:
receiving a first internal signal and a refresh signal;
selecting a first plurality of word lines in a memory bank responsive, at least in part, to the first internal signal and the refresh signal;
receiving a row hammer refresh signal; and
selecting a single word line in the memory bank responsive, at least in hart, to the row hammer refresh signal,
wherein the first internal social, the refresh signal, and the row hammer refresh signal are received responsive to a first external command.
12. The method of claim 11 , wherein each one of the first plurality of word lines is in a different memory mat of the memory hank.
13. The method of claim 11 , further comprising:
receiving a refresh address, wherein the first plurality of word lines selected correspond to the refresh address.
14. The method of claim 11 , further comprising:
receiving a row hammer address, wherein the single word line selected corresponds to the row hammer address.
15. The method of claim 11 , wherein the first plurality of word lines are selected during a first time period, the single word line is selected during a second time period.
16. The method of claim 14 , wherein the first and second time periods do not overlap.
17. The method of claim 10 , further comprising:
responsive to a second external command:
receiving a second internal signal and a second refresh signal; and
selecting a second plurality of word lines in a second memory hank responsive, at least in part, to the second internal signal and the second refresh signal.
18. The method of claim 16 , further comprising:
responsive to the second external command:
receiving a second row hammer refresh signal; and
selecting a second single word line in the second memory bank responsive, at least in part, to the second row hammer refresh signal.
19. The method of claim of claim 17 , wherein the single word line and the second single word line are selected during a same time period.
20. The method of claim 10 , wherein the single word line is in a different memory mat than each one of the first plurality of word lines.