Method of manufacturing semiconductor device
According to one embodiment, a method of manufacturing a semiconductor device, includes forming a first insulating layer, an oxide semiconductor layer, a second insulating layer, a buffer layer and a metal layer sequentially on a base, forming a patterned resist on the metal layer, etching the buffer layer and the metal layer using the resist as a mask to expose an upper surface of the second insulating layer, reducing a volume of the resist to expose an upper surface along a side surface of the metal layer, etching the metal layer using the resist as a mask, to form a gate electrode and to expose an upper surface of the buffer layer, and carrying out ion implantation on the oxide semiconductor layer using the gate electrode as a mask.
1. A method of manufacturing a semiconductor device, comprising:
forming a first insulating layer, an oxide semiconductor layer, a second insulating layer, a buffer layer and a metal layer sequentially on a base;
forming a patterned resist on the metal layer;
etching the buffer layer and the metal layer using the resist as a mask to expose an upper surface of the second insulating layer;
reducing a volume of the resist to expose an upper surface along a side surface of the metal layer;
etching the metal layer using the resist as a mask, to form a gate electrode including a first side surface and to expose an upper surface along a second side surface of the buffer layer; and
carrying out ion implantation on the oxide semiconductor layer using the gate electrode as a mask.
2. The manufacturing method of claim 1 , wherein
the buffer layer is a silicon oxide layer.
3. The manufacturing method of claim 1 , wherein
the buffer layer is an oxide semiconductor layer.
4. The manufacturing method of claim 1 , wherein
a width from the first side surface to the second side surface is 0.5 μm or greater.