Multi-chip system-in-package
A system-in-package includes an interposer substrate having a first side and a second side opposite the first side, and a redistribution layer disposed on the first side. The redistribution layer includes a plurality of contact pads and a plurality of interconnections disposed on the first side. The plurality of interconnections is electrically connected to a plurality of terminals disposed on the second side opposite the first side. A first semiconductor die is disposed on the first side and electrically coupled to a first of the plurality of contact pads and a first of the plurality of interconnections disposed on the first side of the interposer substrate. A second semiconductor die is disposed on the first side. The second semiconductor die is electrically coupled to a second of the plurality of contact pads and a second of the plurality of interconnections disposed on the first side of the interposer substrate.
1 . A method, comprising:
forming a wafer-level interposer substrate having a first side and a second side opposite the first side, the wafer-level interposer substrate includes a support structure in an edge area on the first side;
forming a through-substrate via (TSV) extending between the first side and the second side of the wafer-level interposer substrate;
flip chip mounting at least two semiconductor die on the first side of the wafer-level interposer substrate;
encapsulating the at least two semiconductor die mounted on the first side of the wafer-level interposer substrate in a layer of molding material; and
singulating a wafer-level assembly of the wafer-level interposer substrate and the layer of molding material encapsulating the at least two semiconductor die mounted on the wafer-level interposer substrate to produce at least one individual system-in-package including the at least two semiconductor die.
2 . The method of claim 1 , wherein the wafer-level interposer substrate is a silicon wafer, and wherein forming the wafer-level interposer substrate includes thinning the silicon wafer to a thickness of less than about 50 μm.
3 . The method of claim 2 , wherein thinning the silicon wafer includes forming substrate protrusions extending perpendicularly from the second side of the wafer-level interposer substrate.
4 . The method of claim 1 , wherein forming the wafer-level interposer substrate includes forming a redistribution layer including a plurality of contact pads and interconnection pads on the first side of the wafer-level interposer substrate.
5 . The method of claim 1 , wherein forming the TSV extending between the first side and the second side of the wafer-level interposer substrate includes disposing conductive material in the TSV to form a conductive path between the first side and the second side of the wafer-level interposer substrate.
6 . The method of claim 1 , further comprising:
attaching conductive bumps to terminals disposed on the second side of the wafer-level interposer substrate.
7 . A method, comprising:
disposing a redistribution layer including contact pads and interconnection pads on a first side of a semiconductor wafer;
mounting a first semiconductor die and a second semiconductor die on the redistribution layer on the first side of the semiconductor wafer;
encapsulating the first semiconductor die and the second semiconductor die on the first side of the semiconductor wafer in a layer of molding material;
thinning the semiconductor wafer from a second side opposite the first side;
forming at least a through-semiconductor via (TSV) extending between the first side and the second side of the semiconductor wafer;
forming an interconnection including a terminal on the second side of thinned semiconductor wafer; and
singulating an assembly of the semiconductor wafer and the layer of molding material to produce an individual unit of a system-in-package (SiP) that includes the first semiconductor die and the second semiconductor die integrated on the semiconductor wafer.
8 . The method of claim 7 , wherein thinning the semiconductor wafer from the second side opposite the first side includes forming substrate protrusions extending from the second side of the semiconductor wafer.
9 . The method of claim 7 , wherein thinning the semiconductor wafer from the second side opposite the first side includes disposing a dam-like support structure made of a molding material in an edge area on the first side of the semiconductor wafer.
10 . A method, comprising:
disposing a redistribution layer on a first side of a substrate, the redistribution layer including a plurality of contact pads and a plurality of interconnections on the first side, the plurality of interconnections being electrically connected to a plurality of terminals disposed on a second side of the substrate opposite the first side;
disposing a first semiconductor die on the first side, the first semiconductor die being electrically coupled to a first of the plurality of contact pads and a first of the plurality of interconnections of the redistribution layer;
disposing a second semiconductor die on the first side, the second semiconductor die being electrically coupled to a second of the plurality of contact pads and a second of the plurality of interconnections of the redistribution layer; and
disposing a third semiconductor die on and coupled to the second semiconductor die, wherein a bottom side of the third semiconductor die is exposed through a layer of molding material disposed on the first side.
11 . The method of claim 10 further comprising:
forming a through substrate via providing a conductive pathway for electrical interconnection between the first side and the second side of the substrate.
12 . The method of claim 11 , wherein the through substrate via is at least partially filled with electrically conductive material including at least one of a metal paste and a laminate of titanium nitride (TiN) and aluminum (Al) or copper (Cu).
13 . The method of claim 10 , wherein the substrate has a thickness of less than 50 micrometers.
14 . The method of claim 10 further comprising:
forming a layer of molding material disposed on the first side of the substrate, the layer of molding material encapsulating the first semiconductor die and the second semiconductor die.
15 . The method of claim 14 , wherein the layer of molding material has a thickness in a range of 100 to 150 micrometers.
16 . The method of claim 10 , wherein the second semiconductor die is disposed on the first side in a flip chip orientation.
17 . The method of claim 10 further comprising:
disposing a conductive bump on at least one of the plurality of terminals disposed on the second side.
18 . The method of claim 10 wherein the third semiconductor die is disposed in a flip chip orientation on and is electrically coupled to the second semiconductor die.
19 . The method of claim 18 , wherein the first semiconductor die, the second semiconductor die, and the third semiconductor die are encapsulated in the layer of molding material disposed on the first side.
20 . The method of claim 19 , further including disposing a heat slug on the bottom side of the third semiconductor die.
21 . A method, comprising:
forming a wafer-level interposer substrate having a first side and a second side opposite the first side, wherein the wafer-level interposer substrate is a silicon wafer thinned to a thickness of less than about 50 μm;
forming a through-substrate via (TSV) extending between the first side and the second side of the wafer-level interposer substrate;
flip chip mounting at least two semiconductor die on the first side of the wafer-level interposer substrate;
encapsulating the at least two semiconductor die mounted on the first side of wafer-level interposer substrate in a layer of molding material; and
singulating a wafer-level assembly of the wafer-level interposer substrate and the layer of molding material encapsulating the at least two semiconductor die mounted on the wafer-level interposer substrate to produce at least one individual system-in-package including the at least two semiconductor die.
22 . The method of claim 21 , wherein thinning the silicon wafer includes forming substrate protrusions extending perpendicularly from the second side of the wafer-level interposer substrate.
23 . The method of claim 21 , wherein forming the wafer-level interposer substrate includes forming a redistribution layer including a plurality of contact pads and interconnection pads on the first side of the wafer-level interposer substrate.
24 . The method of claim 21 , wherein forming the wafer-level interposer substrate includes disposing a dam-like support structure made of molding material in an edge area on the first side of the wafer-level interposer substrate.