Semiconductor structure and manufacturing method thereof
A method includes: forming a first interposer die, wherein the first interposer die comprises a first substrate and a first redistribution layer (RDL) over the first substrate; bonding the first interposer die to a second RDL; encapsulating the second RDL and the first interposer die with a first encapsulating layer; thinning the first interpose die to expose the first RDL; and bonding a first semiconductor die to the first RDL.
1 . A method, comprising:
forming a first interposer die, the first interposer die comprising:
a first substrate; and
a first redistribution layer (RDL) over the first substrate;
bonding the first interposer die to a second RDL;
encapsulating the second RDL and the first interposer die with a first encapsulating layer;
thinning the first interpose die to expose the first RDL; and
bonding a first semiconductor die to the first RDL.
2 . The method of claim 1 , further comprising forming a plurality of interposer dies in a second substrate and separating the second substrate into a plurality of interposer dies including the first interposer die.
3 . The method of claim 2 , wherein the forming of the plurality of interposer dies comprises forming caps on the first RDL of each of the interposer dies.
4 . The method of claim 3 , wherein the forming of the plurality of interposer dies comprises forming metallization layers between each of the caps and the first RDL of each of the interposer dies.
5 . The method of claim 1 , wherein the thinning of the first interposer die comprises removing an entirety of the first substrate of the first interposer die, a portion of the first encapsulating layer over the first substrate, and another portion of the first encapsulating layer laterally surround the first substrate.
6 . The method of claim 5 , further comprising forming a plurality of first connectors on the first RDL prior to the bonding of the first semiconductor die and the first RDL, wherein the first interposer die is bonded and electrically coupled to the first semiconductor die through the plurality of first connectors.
7 . The method of claim 6 , further comprising forming a second encapsulating layer to laterally surround the plurality of first connectors.
8 . The method of claim 7 , wherein the second encapsulating layer tapers from a first end near the first RDL to a second end near the first semiconductor die.
9 . The method of claim 7 , further comprising forming a third encapsulating layer to laterally surround the first semiconductor die and the second encapsulating layer.
10 . The method of claim 7 , further comprising:
depositing a protection layer over the first RDL; and
forming a plurality of conductive vias penetrate the protection layer and electrically coupled to the first RDL prior to the formation of the plurality of first connectors,
wherein the plurality of conductive vias electrically coupling the first semiconductor die to the first RDL through the plurality of first connectors.
11 . A method, comprising:
bonding a plurality of interposer dies to a first redistribution layer (RDL), each of the interposer dies comprising a substrate and a second RDL below the substrate;
encapsulating the first RDL and the interposer dies with a molding material, wherein the molding material separates the plurality of interposer dies from each other;
reducing a thickness of the substrate of each of the interposer dies; and
electrically coupling the interposer dies to a first semiconductor die.
12 . The method of claim 11 , wherein the bonding of the interposer dies to the first RDL comprises electrically coupling the first RDL to the second RDL through a plurality of conductive vias.
13 . The method of claim 12 , wherein each of the interposer dies further comprises a plurality of caps to laterally surround the respective conductive vias.
14 . The method of claim 11 , wherein the substrate of each of the interposer dies comprises bulk silicon.
15 . The method of claim 14 , wherein the reducing of the thickness of the substrate of each of the interposer dies comprises removing an entirety of the substrate of each of the interposer dies.
16 . The method of claim 11 , further comprising forming a plurality of connectors between the interposer dies and the first semiconductor die.
17 . A method, comprising:
forming an interposer die using a first substrate, the interposer die comprising a first redistribution layer (RDL) over the first substrate;
bonding the interposer die to a second RDL;
thinning the interpose die;
forming first connectors over the interposer die on a side opposite to the second RDL; and
bonding a first semiconductor die with the first RDL through the first connectors.
18 . The method of claim 17 , further comprising encapsulating the second RDL and the interposer die with a first encapsulating material, wherein the thinning of the first RDL and the interposer die comprises thinning the first encapsulating material to exposes the first RDL.
19 . The method of claim 18 , further comprising encapsulating the first connectors using a second encapsulating material, wherein the second encapsulating material forms an inclined edge extending from the first RDL to the first semiconductor die.
20 . The method of claim 19 , wherein the first encapsulating material is different from the second encapsulating material.