IP Library Granted Patent US 12,491,604
Granted Patent B2
US 12,491,604 · App. 17/661,611 · Granted Dec 9, 2025

Chemical mechanical polishing pad

Inventors: Bainian Qian (Newark, DE); Marty W. DeGroot (Middletown, DE)
Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
B24B37/24H01L21/30625H01L21/31053
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Quick Facts
Patent No.
US 12,491,604
App. No.
17/661,611
Granted
Dec 9, 2025
Kind
B2
Abstract

A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

Claims (10)

1 . A chemical mechanical polishing pad adapted for polishing a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising:

a polishing layer adapted for polishing a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, comprising:

an isocyanate terminated urethane prepolymer having 8.75 to 9.25 wt % unreacted NCO groups; and,

a curative system consisting essentially of:

20 to 60 wt % of a high molecular weight polyol curative, wherein the high molecular weight polyol curative has a number average molecular weight, M N , of 10,000 to 12,000; and wherein the high molecular weight polyol curative has an average of 6 hydroxyl groups per molecule and a hydroxyl number (mg KOH/g) of about 30; and,

40 to 80 wt % of a difunctional curative wherein the polishing layer exhibits a density of greater than 0.6 g/cm 3 and the polishing layer includes polymeric microballoons having shell walls and a weight average diameter of 10 to 50 μm and wherein the polishing layer has an elongation to break of 125 to 300% as measured according to ASTM D412.

2 . The chemical mechanical polishing pad of claim 1 , wherein the curative system has a plurality of reactive hydrogen groups and the isocyanate terminated urethane prepolymer has a plurality of unreacted NCO groups; and wherein a stoichiometric ratio of the reactive hydrogen groups to the unreacted NCO groups is 0.85 to 1.15.

3 . The chemical mechanical polishing pad of claim 1 , wherein the isocyanate terminated urethane prepolymer has 8.95 to 9.25 wt % unreacted NCO groups.

4 . The chemical mechanical polishing pad of claim 1 , wherein the polishing surface has a groove pattern formed therein.

5 . The chemical mechanical polishing pad of claim 1 , wherein the M N of the high molecular weight polyol curative is about 11,400.

Assignments (5)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Jun 27, 2025
From: ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC.
To: DUPONT ELECTRONIC MATERIALS HOLDING, INC.
Reel/Frame 071765/0928 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 24, 2022
From: QIAN, BAINIAN
To: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.
Reel/Frame 059993/0886 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 24, 2022
From: DEGROOT, MARTY W.
To: DOW GLOBAL TECHNOLOGIES LLC
Reel/Frame 059993/0899 →
Continuity (3)
Continuation 16415464 · May 17, 2019
Continuation 14261893 · Apr 25, 2014
Related Publication 20220266416A1 · Aug 25, 2022
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