Deposition of silicon-based dielectric films
A processing method comprises positioning a substrate in a processing chamber and setting a temperature of the substrate to a range of 50° C. to 500° C.; conducting an atomic layer deposition (ALD) cycle on the substrate; and repeating the ALD cycle to form a silicon oxide film. The ALD cycle comprises: exposing the substrate to an aminosilane precursor in the processing chamber by pulsing a flow of the aminosilane precursor; purging the processing chamber of the aminosilane precursor; exposing the substrate to an oxidizing agent by pulsing a flow of the oxidizing agent for a duration in a range of greater than or equal to 100 milliseconds to less than or equal to 3 seconds; and purging the processing chamber of the oxidizing agent.
1. A processing method comprising:
conducting an atomic layer deposition (ALD) cycle on a substrate at a temperature in a range of from 50° C. to 500° C., the ALD cycle comprising:
exposing the substrate to an aminosilane precursor in the processing chamber by pulsing a flow of the aminosilane precursor;
purging the processing chamber of the aminosilane precursor;
conducting a nitrogen treatment including a nitrogen-containing plasma or a hydrazine-containing base on the substrate;
exposing the substrate to an oxidizing agent by pulsing a flow of the oxidizing agent; and
purging the processing chamber of the oxidizing agent; and
repeating the ALD cycle to form a silicon oxide (SiO 2 ) film.
2. The method of claim 1 , wherein the aminosilane precursor is an aminodisilane or a mono-substituted aminosilane.
3. The method of claim 2 , wherein the aminodisilane has a general formula of Si 2 X 4 (N(R 1 R 2 ))(N(R 3 R 4 )) where each X is independently selected from the group consisting of: hydrogen (H) and a halide, the halide being selected from the group consisting of: fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); and each of R 1 to R 4 is independently selected from a linear or branched C1-C10 alkyl groups, or the mono-substituted aminosilane has a general formula of H 3 Si:NY 3 , wherein each Y is independently a linear or branched C1-C10 alkyl group.
4. The method of claim 2 , wherein the aminosilane precursor is the aminodisilane, comprising 1,2-bis(diisopropylamino)aminodisilane (BDIPADS).
5. The method of claim 2 , wherein the aminosilane precursor is the mono-substituted aminosilane comprising di(sec-butylamino) silane (DSBAS).
6. The method of claim 1 , wherein the oxidizing agent comprises ozone (O 3 ), hydrogen peroxide (H 2 O 2 ), or oxygen-containing plasma.
7. The method of claim 1 , further comprising conducting an oxygen plasma treatment after conducting a plurality of ALD cycles.
8. The method of claim 1 , further comprising conducting a thermal annealing treatment of the silicon dioxide film in an oxygen-containing environment after conducting a plurality of ALD cycles.
9. The method of claim 1 , further comprising conducting a microwave plasma treatment of the silicon dioxide film in an oxygen-containing environment after conducting a plurality of ALD cycles.
10. The method of claim 1 , wherein the pulsing of the flow of the aminosilane precursor is for a duration of greater than or equal to 100 milliseconds to less than or equal to 1 second.
11. A processing method comprising:
conducting an atomic layer deposition (ALD) cycle on a substrate at a temperature in a range of from 75° C. to 350° C., the substrate having a substrate surface having at least one feature thereon, the ALD cycle comprising:
exposing the substrate surface to an aminodisilane precursor in the processing chamber by pulsing a flow of the aminodisilane precursor;
purging the processing chamber of the aminodisilane precursor;
conducting a nitrogen treatment including a nitrogen-containing plasma or a hydrazine-containing base on the substrate;
exposing the substrate surface to an oxidizing agent by pulsing a flow of the oxidizing agent; and
purging the processing chamber of the oxidizing agent; and
repeating the ALD cycle to form a conformal silicon oxide (SiO 2 ) film in the feature.
12. The method of claim 11 , wherein the feature has an aspect ratio of greater than or equal to 5:1.
13. The method of claim 11 , wherein the aminodisilane precursor comprises 1,2-bis(diisopropylamino)aminodisilane (BDIPADS).
14. The method of claim 11 , wherein the pulsing of the flow of the aminodisilane precursor is for a duration of greater than or equal to 100 milliseconds to less than or equal to 1 second.
15. The method of claim 11 , wherein the oxidizing agent comprises ozone (O 3 ), hydrogen peroxide (H 2 O 2 ), or oxygen-containing plasma.
16. The method of claim 11 , further comprising conducting an oxygen plasma treatment after conducting a plurality of ALD cycles.
17. The method of claim 11 , further comprising after conducting a plurality of ALD cycles, conducting a thermal annealing treatment of the silicon dioxide film in an oxygen-containing environment, or comprising conducting a microwave plasma treatment of the silicon dioxide film in an oxygen-containing environment.
18. A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:
conducting an atomic layer deposition (ALD) cycle on a substrate at a temperature in a range of from 50° C. to 500° C., the ALD cycle comprising:
exposing the substrate to an aminosilane precursor in the processing chamber by pulsing a flow of the aminosilane precursor;
purging the processing chamber of the aminosilane precursor;
conducting a nitrogen treatment including a nitrogen-containing plasma or a hydrazine-containing base on the substrate;
exposing the substrate to an oxidizing agent by pulsing a flow of the oxidizing agent; and
purging the processing chamber of the oxidizing agent; and
repeating the ALD cycle to form a silicon oxide (SiO 2 ) film.