Apparatus and method for processing substrate
An apparatus for processing a substrate includes a process chamber; a support which is placed inside the process chamber and supports the substrate; a fluid supplier which supplies fluid into the process chamber; and a controller configured to perform a compressing step to bring the fluid into a supercritical phase inside the process chamber, in which the compressing step includes a continuous first section and second section, the fluid supplier includes a first portion and a second portion, and the controller supplies the fluid into the process chamber at a first speed during the first section using the first portion, and supplies the fluid into the process chamber at a second speed higher than the first speed during the second section using the second portion.
1 . An apparatus for processing a substrate, the apparatus comprising:
a process chamber;
a support which is placed inside the process chamber and is configured to support the substrate;
a fluid supplier which is configured to supply a fluid into the process chamber; and
a controller configured to perform a compressing step of the processing of the substrate to bring the fluid into a supercritical phase inside the process chamber,
wherein the compressing step comprises a continuous first section and second section,
wherein the fluid supplier comprises a first portion and a second portion,
wherein the controller is further configured to control the fluid supplier to supply the fluid into the process chamber at a first rate during the first section using the first portion, and supply the fluid into the process chamber at a second rate higher than the first rate during the second section using the second portion, and
wherein a progress time of the first section is longer than a progress time of the second section.
2 . The apparatus for processing the substrate of claim 1 ,
wherein the first rate is equal to or greater than 0.1 g/s and equal to or smaller than 0.5 g/s.
3 . The apparatus for processing the substrate of claim 1 , wherein the progress time of the first section is equal to or greater than 1/15 and equal to or smaller than 1/10 of a progress time of the compressing step, and the progress time of the second section is equal to or greater than 1/20 and equal to or smaller than 1/15 of the progress time of the compressing step.
4 . The apparatus for processing the substrate of claim 1 , wherein the fluid supplier comprises:
a storage tank which stores the fluid;
a main supply line connected to the process chamber; and
a plurality of supply lines placed in parallel between the storage tank and the main supply line,
wherein the plurality of supply lines comprise a first supply line which is used during the first section, and a second supply line which is used during the second section and is different from the first supply line.
5 . The apparatus for processing the substrate of claim 4 , wherein a first diameter of the first supply line is different from a second diameter of the second supply line.
6 . The apparatus for processing the substrate of claim 4 , wherein a first valve is installed on the first supply line, and a second valve is installed on the second supply line, and
wherein a first aperture ratio of the first valve is different from a second aperture ratio of the second valve.
7 . The apparatus for processing the substrate of claim 4 , wherein the storage tank comprises a first storage tank in which the fluid is stored at a first pressure, and a second storage tank in which the fluid is stored at a second pressure greater than the first pressure,
wherein, during the first section, the controller is configured to deliver the fluid stored in the first storage tank to the main supply line through the first supply line, and
wherein, during the second section, the controller is configured to deliver the fluid stored in the second storage tank to the main supply line through the second supply line.
8 . The apparatus for processing the substrate of claim 1 , wherein the fluid supplier supplies the fluid toward an upper side of the substrate.
9 . The apparatus for processing the substrate of claim 1 , wherein the process chamber comprises an upper housing and a lower housing,
wherein the fluid is supplied through a supply hole formed in a central region of the upper housing, and
wherein the fluid is exhausted through an exhaust hole formed in a central region of the lower housing.
10 . The apparatus for processing the substrate of claim 9 , further comprising:
a baffle which is provided in the upper housing and connected to the supply hole.
11 . The apparatus for processing the substrate of claim 1 , wherein the compressing step further comprises a third section after the second section,
wherein the fluid supplier comprises a third portion, and
wherein the controller is configured to control the fluid supplier to supply the fluid into the process chamber at a third rate higher than the second rate during the third section.
12 . The apparatus for processing the substrate of claim 1 , wherein after the compressing step, the controller is configured to repeatedly exhaust a part of the fluid inside the process chamber, and increase an amount of the fluid inside the process chamber by the fluid supplier.
13 . The apparatus for processing the substrate of claim 1 , wherein after the compressing step, the controller is configured to exhaust the fluid from the process chamber at a first exhaust speed during a first exhaust section, and exhaust the fluid from the process chamber at a second exhaust speed higher than the first exhaust speed during a second exhaust section.
14 . The apparatus for processing the substrate of claim 13 , wherein the fluid is in a supercritical phase at a start time point of the second exhaust section.
15 . The apparatus for processing the substrate of claim 1 , wherein a negative tone develop is formed on the substrate, and the controller is configured to take the substrate into the process chamber in a state of being wetted by a developer, and
wherein the fluid comprises carbon dioxide.
16 . An apparatus for processing a substrate, the apparatus comprising:
a process chamber;
a support which is placed inside the process chamber and is configured to support the substrate;
a fluid supplier which is configured to supply a fluid toward an upper side of the substrate inside the process chamber; and
a controller configured to perform a compressing step of the processing of the substrate to bring the fluid into a supercritical phase inside the process chamber,
wherein the compressing step comprises a continuous first section, a second section and a third section,
wherein the fluid supplier comprises a first portion, a second portion, and a third portion,
wherein the controller is further configured to control the fluid supplier to supply the fluid into the process chamber at a first rate during the first section using the first portion, supply the fluid into the process chamber at a second rate higher than the first rate during the second section using the second portion, and supply the fluid into the process chamber at a third rate higher than the second rate during the third section using the third portion, and
wherein the first rate is equal to or greater than 0.1 g/s and equal to or smaller than 0.5 g/s.
17 . The apparatus for processing the substrate of claim 16 , wherein the fluid supplier comprises:
a storage tank which is configured to store the fluid;
a main supply line which is connected to the process chamber; and
a plurality of supply lines which are placed in parallel between the storage tank and the main supply line,
wherein the plurality of supply lines comprises a first supply line used during the first section, a second supply line which is used during the second section and is different from the first supply line, and a third supply line which is used during the third section and is different from the second supply line.
18 . The apparatus for processing the substrate of claim 17 , wherein a first valve to a third valve having different aperture ratios from each other are installed in the first supply line to the third supply line, respectively.
19 . A method for processing a substrate, the method comprising:
a compressing step of supplying a fluid into a process chamber to bring the fluid into a supercritical phase inside the process chamber;
a processing step of processing the substrate inside the process chamber, using the fluid of the supercritical phase; and
a decompressing step of exhausting the fluid inside the process chamber,
wherein the compressing step comprises a continuous first section and a second section, and comprises supplying the fluid into the process chamber at a first rate during the first section, and supplying the fluid into the process chamber at a second rate higher than the first rate during the second section, and
wherein the method further comprises, after the compressing step, repeatedly exhausting a part of the fluid inside the process chamber, and increasing an amount of the fluid inside the process chamber.