Semiconductor device and method for fabricating the same

1. A semiconductor device, comprising:

a substrate having a first region and a second region;

a first fin-shaped structure extending along a first direction on the first region;

a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion; and

a first gate structure and a second gate structure extending along the second direction on the DDB structure.

2. The semiconductor device of claim 1 , wherein the first gate structure overlaps the first portion and the DDB structure.

3. The semiconductor device of claim 1 , wherein the second gate structure overlaps the second portion and the DDB structure.

4. The semiconductor device of claim 1 , further comprising:

a second fin-shaped structure on the second region;

a single diffusion break (SDB) structure in the second fin-shaped structure to divide the second fin-shaped structure into a third portion and a fourth portion; and

a third gate structure on the SDB structure.

5. The semiconductor device of claim 4 , wherein the third gate structure overlaps the third portion, the fourth portion, and the SDB structure.

6. The semiconductor device of claim 4 , wherein a width of the first gate structure is equal to a width of the third gate structure.

7. The semiconductor device of claim 4 , wherein a width of the first gate structure is equal to a width of the second gate structure.

8. The semiconductor device of claim 1 , wherein the first region comprises a NMOS region and the second region comprises a PMOS region.