Semiconductor device and method of forming the same
A semiconductor device includes a substrate, a pair of source/drain regions, a metal-containing layer, and a gate structure. The substrate includes a trench. The source/drain regions are disposed in the substrate on opposite sides of the trench. The metal-containing layer is disposed under the trench, wherein the metal-containing layer includes a metal silicide layer, and the metal-containing layer and the substrate on opposite sidewalls of the trench collectively form the channel region of the semiconductor device. The gate structure is disposed in the trench. The gate structure includes a gate dielectric layer disposed on opposite sidewalls of the trench, a buffer layer disposed on the metal-containing layer, and a gate conductive layer disposed on the buffer layer and filling in the trench.
1. A semiconductor device, comprising:
a substrate having a trench therein;
a pair of source/drain regions disposed in the substrate at opposite sides of the trench;
a metal-containing layer disposed below the trench, wherein the metal-containing layer comprises a metal silicide layer, the metal-containing layer and the substrate on opposite sidewalls of the trench collectively form a channel region of the semiconductor device; and
a gate structure disposed in the trench, the gate structure comprising:
a gate dielectric layer disposed on opposite sidewalls of the trench;
a buffer layer disposed on the metal-containing layer; and
a gate conductive layer disposed on the buffer layer and filling into the trench.
2. The semiconductor device as claimed in claim 1 , wherein the metal-containing layer laterally extends beyond the opposite sidewalls of the trench.
3. The semiconductor device as claimed in claim 1 , wherein the metal-containing layer is U-shaped and surrounds a portion of the gate conductive layer.
4. The semiconductor device as claimed in claim 1 , wherein the metal silicide layer comprises: a cobalt silicide layer (CoSi 2 ), a nickel silicide layer (NiSi), a titanium silicide layer (TiSi), or a combination thereof.
5. The semiconductor device as claimed in claim 1 , further comprising:
a first connecting feature and a second connecting feature respectively disposed on the pair of source/drain regions;
an isolation structure disposed between the first connecting feature and the second connecting feature;
a bit line disposed on the first connecting feature; and
a capacitor disposed on the second connecting feature.
6. The semiconductor device as claimed in claim 1 , further comprising:
an isolation layer disposed on the buffer layer and the gate conductive layer and between the pair of source/drain regions.
7. The semiconductor device as claimed in claim 1 , wherein a thickness of the gate dielectric layer is smaller than a thickness of the metal-containing layer.
8. The semiconductor device as claimed in claim 1 , further comprising:
a barrier layer disposed between the buffer layer and the gate conductive layer.
9. The semiconductor device as claimed in claim 3 , wherein a length of a vertical portion of the metal-containing layer is in a range from 5 nm to 10 nm.
10. The semiconductor device as claimed in claim 3 , wherein a length of a horizontal portion of the metal-containing layer is in a range from 20 nm to 30 nm.
11. The semiconductor device as claimed in claim 1 , wherein the substrate separates the metal-containing layer from the pair of source/drain regions.