Clamped semiconductor wafers and semiconductor devices
Clamped semiconductor wafers and clamped semiconductor devices include reservoirs filled with a flowable metal which hardens to allow the wafers/devices to be shipped or stored. The hardened metal may also be reflowed to a liquid to allow clamping of the semiconductor wafers together and to allow clamping of the semiconductor packages together. The flowable metal may be filled into the reservoirs as a liquid or paste. Thereafter, the flowable metal may be cooled to harden the flowable metal into a clamping member.
1. A semiconductor wafer, comprising:
first and second opposed major surfaces, the first surface defining a first direction parallel to the first surface, and a second direction between the first and second opposed major surfaces;
a dielectric layer adjacent the first major surface;
integrated circuits formed in the dielectric layer;
bond pads in the first major surface, the bond pads electrically coupled to the integrated circuits; and
a set of one or more reservoirs formed in the dielectric layer and open at the first major surface, the set of one or more reservoirs configured to receive a flowable metal to clamp the semiconductor wafer to a second semiconductor wafer upon hardening of the flowable metal in the set of one or more reservoirs, a reservoir of the set of one or more reservoirs comprising:
a first section having a first sub-section extending in the first direction, and a second sub-section extending in the second direction, and
a second section having a third sub-section extending in the first direction and a fourth sub-section extending in the second direction,
wherein the first and second sections are connected to each other through one or more additional sections formed in the second semiconductor wafer.
2. The semiconductor wafer of claim 1 , wherein a reservoir from the set of one or more reservoirs comprises a base section distal from the first major surface and a neck section more proximal to the first major surface than the base section, and wherein the base section is wider than the neck section.
3. The semiconductor wafer of claim 1 , wherein the set of one or more reservoirs extend to a depth partially through a depth of the dielectric layer.
4. The semiconductor wafer of claim 1 , wherein the set of one or more reservoirs are positioned so as not to interfere with positions of the integrated circuits and bond pads.
5. The semiconductor wafer of claim 1 , further comprising a semiconductor die comprising the integrated circuits, wherein the set of one or more reservoirs comprise a plurality of reservoirs surrounding a footprint of the semiconductor die.
6. The semiconductor wafer of claim 1 , further comprising a semiconductor die comprising the integrated circuits, wherein the set of one or more reservoirs comprise one or more reservoirs within a footprint of the semiconductor die.
7. The semiconductor wafer of claim 1 , further comprising a metal within the set of one or more reservoirs, wherein the metal is configured to be a liquid or paste at a first temperature and a solid at a second temperature lower than the first temperature.
8. The semiconductor wafer of claim 7 , wherein the metal is configured to fill at least a portion of a first reservoir of the set of one or more reservoirs in the wafer, and to at least partially fill a second reservoir of the second wafer, the first and second reservoirs aligned with each other, to clamp the wafer to the second wafer when the metal is at the second temperature.
9. The semiconductor wafer of claim 7 , wherein the metal is configured to contract when moving from the first temperature to the second temperature to pull the wafer and the second wafer tightly together.
10. The semiconductor wafer of claim 1 , wherein the integrated circuits comprise one of memory arrays and CMOS logic circuits, and wherein the second wafer comprises the other of the memory arrays and CMOS logic circuits.
11. A semiconductor die, comprising:
first and second opposed major surfaces;
a dielectric layer adjacent the first major surface;
integrated circuits formed in the dielectric layer;
bond pads in the first major surface, the bond pads electrically coupled to the integrated circuits; and
a set of one or more reservoirs formed in the dielectric layer and open at the first major surface, the set of one or more reservoirs configured to receive a flowable metal to clamp the semiconductor die to a second semiconductor die upon hardening of the flowable metal in the set of one or more reservoirs, a reservoir of the set of one or more reservoirs comprising:
a first “T”-shaped section having a first sub-section extending in a first direction, and a second sub-section extending in a second direction orthogonal to the first direction, and
a second section having a third sub-section extending in the first direction and a fourth sub-section extending in the second direction,
wherein the first and second sections are connected to each other through one or more additional sections formed in the second semiconductor wafer.
12. The semiconductor die of claim 11 , wherein the integrated circuits are in an active area of the semiconductor die, and wherein the set of one or more reservoirs comprise a plurality of reservoirs in one or more borders around the active area.
13. The semiconductor die of claim 11 , wherein the integrated circuits are in an active area of the semiconductor die, and wherein the set of one or more reservoirs comprise a one or more reservoirs in the active area of the die.
14. The semiconductor die of claim 11 , wherein a reservoir from the set of one or more reservoirs comprises a base section distal from the first major surface and a neck section more proximal to the first major surface than the base section, and wherein the base section is wider than the neck section.
15. A semiconductor device, comprising:
a signal carrier medium comprising first and second opposed major surfaces, the first surface defining a first direction parallel to the first surface, and a second direction between the first and second opposed major surfaces; and
a set of one or more reservoirs formed in the signal carrier medium and open to at one of the first and second major surfaces, the set of one or more reservoirs configured to receive a flowable metal to clamp the semiconductor device to a second semiconductor device upon hardening of the flowable metal in the set of one or more reservoirs, a reservoir of the set of one or more reservoirs comprising:
a first section having a first sub-section extending in the first direction, and a second sub-section extending in the second direction, and
a second section having a third sub-section extending in the first direction and a fourth sub-section extending in the second direction,
wherein the first and second sections are connected to each other through one or more additional sections formed in the second semiconductor wafer.
16. The semiconductor device of claim 15 , wherein one of the semiconductor device and second semiconductor device is a printed circuit board, and the other of the semiconductor device and second semiconductor device is a semiconductor package comprising one or more semiconductor dies.
17. The semiconductor device of claim 15 , further comprising a metal within the set of one or more reservoirs, wherein the metal is configured to be a liquid or paste at a first temperature and a solid at a second temperature lower than the first temperature.
18. The semiconductor device of claim 17 , wherein the metal is configured to fill at least a portion of a first reservoir of the set of one or more reservoirs in the semiconductor device, and to at least partially fill a second reservoir of the second semiconductor device, the first and second reservoirs aligned with each other, to clamp the semiconductor device to the second semiconductor device when the metal is at the second temperature.
19. The semiconductor wafer of claim 18 , further comprising a third semiconductor device comprising a third set of one or more reservoirs, the metal flowing into a reservoir of the third set of one or more reservoirs to clamp the third semiconductor device to the semiconductor device and the second semiconductor device when the metal is at the second temperature.