Optical sensing apparatus
An optical sensing apparatus is provided. The optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal; an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers carriers; a buried-dopant region formed in the substrate and separated from the absorption region, wherein the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region; and a buffer layer formed between the buried-dopant region and the absorption region, wherein the buffer layer is intrinsic and has a thickness not less than 150 nm.
1 . An optical sensing apparatus comprising:
a substrate comprising a first material;
an absorption region comprising a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal;
an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers;
a buried-dopant region of a first conductivity type, formed in the substrate, wherein the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region, and wherein the amplification region is between the absorption region and the buried-dopant region;
an interface-dopant region formed between the absorption region and the buried-dopant region in the substrate; and
a buffer layer between the buried-dopant region and the absorption region, wherein the buffer layer is intrinsic and has a thickness no smaller than 150 nm;
wherein the buried-dopant region comprises one or more first buried-dopant regions and one or more second buried-dopant regions at least partially surrounding the one or more first buried-dopant regions,
wherein the one or more first buried-dopant regions and the one or more second buried-dopant regions are doped with a dopant having the first conductivity type,
wherein a property associated with the one or more first buried-dopant regions is different from the property associated with the second buried-dopant regions, and
wherein the property comprises a peak doping concentration or a depth;
a cladding layer formed over the absorption region;
one or more first contacts formed on the cladding layer and electrically coupled to the buried-dopant region, the one or more first contacts configured to provide at least a portion of amplified photo-carriers from the buried-dopant region as a readout signal; and
one or more first conductive regions formed in the substrate and coupled to the buried-dopant region, wherein the one or more first conductive regions are of the first conductivity type and doped with a dopant having a peak doping concentration not less than about 5×10 18 cm −3 .
2 . The optical sensing apparatus of claim 1 , wherein:
the one or more first buried-dopant regions have a first peak doping concentration and a first depth; and
the one or more second buried-dopant regions have a second peak doping concentration and a second depth,
wherein the buried-dopant region has at least one of (i) the second peak doping concentration being lower than the first peak doping concentration, or (ii) the second depth being shallower than the first depth.
3 . The optical sensing apparatus of claim 2 , wherein the buried-dopant region comprises: one or more doped guard-rings surrounding the one or more first buried-dopant regions.
4 . The optical sensing apparatus of claim 1 , wherein the interface-dopant region is of a second conductivity type different form the first conductivity type and further comprises:
one or more first interface-dopant regions having a third peak doping concentration and a third depth; and
one or more second interface-dopant regions surrounding the one or more first interface-dopant regions and having a fourth peak doping concentration and a fourth depth,
wherein the interface-dopant region has at least one of (i) the fourth peak doping concentration being higher than the third peak doping concentration, or (ii) the fourth depth being shallower than the third depth.
5 . The optical sensing apparatus of claim 1 , further comprising one or more sidewall regions formed between the absorption region and the one or more first conductive regions.
6 . The optical sensing apparatus of claim 5 , wherein the one or more sidewall regions prevent electrical contacts between the absorption region and the one or more first conductive regions.
7 . An optical sensing apparatus comprising:
a substrate comprising a first material;
an absorption region comprising a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal;
an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers;
a buried-dopant region of a first conductivity type, formed in the substrate and separated from the absorption region, wherein the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region, and wherein the buried-dopant region comprises:
one or more first buried-dopant regions having a first peak doping concentration;
one or more second buried-dopant regions surrounding the one or more first buried-dopant regions and having a second peak doping concentration; and
one or more first doped guard-rings having a third peak doping concentration and formed between the one or more first buried-dopant regions and the one or more second buried-dopant regions, wherein the third peak doping concentration is lower than the first peak doping concentration.
8 . The optical sensing apparatus of claim 7 , wherein the substrate comprises a first interface and a second interface opposite to the first interface, wherein the substrate is substantially devoid of metal material between the first interface and the second interface.
9 . The optical sensing apparatus of claim 7 , further comprising an interface-dopant region formed in the substrate, adjacent to the absorption region and between the absorption region and the buried-dopant region, wherein the interface-dopant region is of a second conductivity type different from the first conductivity type of the buried-dopant region, and wherein the interface-dopant region further comprises:
one or more first interface-dopant regions having a fourth peak doping concentration, wherein the one or more first interface-dopant regions are between respective one or more first buried-dopant regions and the absorption region; and
one or more second interface-dopant regions having a fifth peak doping concentration higher than the fourth peak doping concentration, wherein the one or more second interface-dopant regions are between respective one or more second buried-dopant regions and the absorption region.
10 . The optical sensing apparatus of claim 9 , wherein the interface-dopant region further comprises:
one or more second doped guard-rings having a sixth peak doping concentration, the one or more second doped guard-rings surrounding the one or more second interface-dopant regions, wherein the sixth peak doping concentration is lower than the fifth peak doping concentration of the second interface-dopant regions.
11 . The optical sensing apparatus of claim 7 , further comprising one or more first conductive regions formed in the substrate and coupled to the buried-dopant region.
12 . The optical sensing apparatus of claim 11 , further comprising one or more sidewall regions formed between the absorption region and the one or more first conductive regions.
13 . The optical sensing apparatus of claim 12 , wherein the one or more sidewall regions prevent electrical contacts between the absorption region and the one or more first conductive regions.
14 . An optical sensing apparatus comprising:
a substrate comprising a first material;
an absorption region comprising a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal;
an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers;
a buried-dopant region of a first conductivity type, formed in the substrate, wherein the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region, and wherein the amplification region is between the absorption region and the buried-dopant region;
an interface-dopant region formed between the absorption region and the buried-dopant region in the substrate,
wherein the buried-dopant region comprises one or more first buried-dopant regions and one or more second buried-dopant regions at least partially surrounding the one or more first buried-dopant regions,
wherein the one or more first buried-dopant regions and the one or more second buried-dopant regions are doped with a dopant having the first conductivity type,
wherein a property associated with the one or more first buried-dopant regions is different from the property associated with the second buried-dopant regions, and
wherein the property comprises a peak doping concentration or a depth;
a cladding layer formed over the absorption region;
one or more first contacts formed on the cladding layer and electrically coupled to the buried-dopant region, the one or more first contacts configured to provide at least a portion of amplified photo-carriers from the buried-dopant region as a readout signal; and
one or more first conductive regions formed in the substrate and coupled to the buried-dopant region, wherein the one or more first conductive regions are of the first conductivity type and doped with a dopant having a peak doping concentration not less than about 5×10 18 cm −3 ,
wherein:
the one or more first buried-dopant regions have a first peak doping concentration and a first depth; and
the one or more second buried-dopant regions have a second peak doping concentration and a second depth;
wherein the buried-dopant region comprises: one or more doped guard-rings surrounding the one or more first buried-dopant regions, and
wherein the buried-dopant region has at least one of (i) the second peak doping concentration being lower than the first peak doping concentration, or (ii) the second depth being shallower than the first depth.
15 . The optical sensing apparatus of claim 14 , wherein the interface-dopant region is of a second conductivity type different form the first conductivity type and further comprises:
one or more first interface-dopant regions having a third peak doping concentration and a third depth; and
one or more second interface-dopant regions surrounding the one or more first interface-dopant regions and having a fourth peak doping concentration and a fourth depth,
wherein the interface-dopant region has at least one of (i) the fourth peak doping concentration being higher than the third peak doping concentration, or (ii) the fourth depth being shallower than the third depth.
16 . The optical sensing apparatus of claim 14 , further comprising one or more sidewall regions formed between the absorption region and the one or more first conductive regions.
17 . The optical sensing apparatus of claim 16 , wherein the one or more sidewall regions prevent electrical contacts between the absorption region and the one or more first conductive regions.