Semiconductor device, semiconductor memory device including the same, electronic system including the same, and method for fabricating the same
A semiconductor device includes a lower insulating film that includes a first and second trenches on a substrate, a first wiring in the first trench, a second wiring in the second trench, a capping insulating film including an insulating recess portion and an insulating liner portion, an upper insulating film on the capping insulating film, and an upper contact that penetrates the capping insulating film and connects to the first wiring, The insulating recess portion is in the second trench and the insulating liner portion extends along an upper surface of the lower insulating film. The upper contact includes a contact recess portion in the first trench, an extended portion connected to the contact recess portion, and a plug portion connected to the extended portion inside the upper insulating film. A width of the extended portion is greater than a width of the plug portion.
1 . A semiconductor device comprising:
a lower insulating film including a first trench and a second trench adjacent to each other on a substrate;
a first wiring that fills a part of the first trench;
a second wiring that fills a part of the second trench;
a capping insulating film including an insulating recess portion and an insulating liner portion,
the insulating recess portion filling an other part of the second trench on the second wiring, and
the insulating liner portion extending along an upper surface of the lower insulating film;
an upper insulating film that covers an upper surface of the capping insulating film; and
an upper contact that penetrates the capping insulating film and is connected to the first wiring, wherein
the upper contact includes a contact recess portion filling an other part of the first trench, an extended portion connected to the contact recess portion inside the insulating liner portion, and a plug portion connected to the extended portion inside the upper insulating film, and
a width of the extended portion is greater than a width of the plug portion.
2 . The semiconductor device of claim 1 , wherein the width of the extended portion is greater than a width of the contact recess portion.
3 . The semiconductor device of claim 1 , wherein a lower surface of the insulating recess portion and a lower surface of the contact recess portion are coplanar.
4 . The semiconductor device of claim 1 , wherein an upper surface of the insulating liner portion and an upper surface of the extended portion are coplanar.
5 . The semiconductor device of claim 1 , further comprising:
a lower contact in the lower insulating film and contacting a lower surface of the second wiring.
6 . The semiconductor device of claim 5 , wherein a width of the lower contact is greater than a width of the second wiring.
7 . The semiconductor device of claim 5 , wherein an upper surface of the lower contact is higher than a lower surface of the first wiring.
8 . The semiconductor device of claim 1 , wherein the width of the plug portion decreases toward the capping insulating film.
9 . The semiconductor device of claim 1 , further comprising:
a peripheral circuit element on the substrate, wherein
the peripheral circuit element is connected to at least one of the first wiring and the second wiring, and
the lower insulating film covers the peripheral circuit element.
10 . The semiconductor device of claim 1 , further comprising:
a mold structure including a plurality of gate electrodes spaced apart from each other and sequentially stacked on the capping insulating film; and
a channel structure that extends in a vertical direction that intersects an upper surface of the substrate and intersects the plurality of gate electrodes,
wherein the upper insulating film covers the mold structure.
11 . The semiconductor device of claim 1 , wherein the upper insulating film has an etching selectivity with respect to the capping insulating film.
12 . The semiconductor device of claim 11 , wherein
the capping insulating film includes silicon nitride, and
the upper insulating film includes silicon oxide.
13 . A semiconductor memory device comprising:
a peripheral circuit element on a substrate;
a lower insulating film that covers the peripheral circuit element on the substrate;
a wiring pattern connected to the peripheral circuit element inside the lower insulating film;
a capping insulating film that covers an upper surface of the lower insulating film and an upper surface of the wiring pattern;
a mold structure including a plurality of gate electrodes that are spaced apart from each other and sequentially stacked on the capping insulating film;
a channel structure that extends in a vertical direction that intersects an upper surface of the substrate and intersects the plurality of gate electrodes;
an upper insulating film that covers the mold structure on the capping insulating film; and
an upper contact that penetrates the capping insulating film and is connected to at least a part of the wiring pattern, wherein
the upper contact includes a contact recess portion that contacts at least the part of the wiring pattern inside the lower insulating film, an extended portion connected to the contact recess portion inside the capping insulating film, and a plug portion connected to the extended portion inside the upper insulating film, and
a width of the extended portion is greater than a width of the plug portion.
14 . The semiconductor memory device of claim 13 , wherein the width of the extended portion is greater than a width of the contact recess portion.
15 . The semiconductor memory device of claim 13 , wherein
the wiring pattern includes a first wiring and a second wiring adjacent to the first wiring,
the first wiring is connected to the upper contact, and
the second wiring is not connected to the upper contact.
16 . The semiconductor memory device of claim 15 , wherein
the capping insulating film includes an insulating recess portion and an insulating liner portion,
the insulating recess portion covers an upper surface of the second wiring inside the lower insulating film, and
the insulating liner portion extends along the upper surface of the lower insulating film.
17 . The semiconductor memory device of claim 15 , further comprising:
a lower contact in the lower insulating film and contacting a lower surface of the second wiring.
18 . The semiconductor memory device of claim 13 , further comprising:
a block separation region extending in a first direction that intersects the vertical direction, the block separation region cutting the mold structure; and
a bit line on the mold structure, the bit line extending in a second direction intersecting the vertical direction and the first direction, and the bit line being connected to the channel structure.
19 . The semiconductor memory device of claim 18 , wherein the upper contact connects at least one of the bit line and the plurality of gate electrodes to the wiring pattern.
20 . An electronic system comprising:
a main board;
a semiconductor memory device on the main board; and
a controller electrically connected to the semiconductor memory device on the main board,
wherein the semiconductor memory device includes an I/O pad, a peripheral circuit element connected to the I/O pad on a substrate, a lower insulating film that covers the peripheral circuit element on the substrate, a wiring pattern connected to the peripheral circuit element inside the lower insulating film, a capping insulating film that covers an upper surface of the lower insulating film and an upper surface of the wiring pattern, an upper insulating film that covers an upper surface of the capping insulating film, and an upper contact that penetrates the capping insulating film and is connected to at least a part of the wiring pattern,
wherein the upper contact includes a contact recess portion contacting with at least a part of the wiring pattern inside the lower insulating film, an extended portion connected to the contact recess portion inside the capping insulating film, and a plug portion connected to the extended portion inside the upper insulating film, and
wherein a width of the extended portion is greater than a width of the plug portion.