Self-aligned hard masks with converted liners
In one embodiment, a trench may be formed in a dielectric surface, and the trenched may be lined with a liner. The trench may be filled with a metal, and the metal may be recessed below an opening of the trench. The liner may be converted into a dielectric, and a hard mask may be deposited into the trench.
1. An apparatus, comprising:
a plurality of interconnect layers, wherein the plurality of interconnect layers comprises a first interconnect layer and a second interconnect layer, wherein the first interconnect layer comprises a first interconnect, and wherein the second interconnect layer comprises a second interconnect; and
a via connecting the first interconnect and the second interconnect;
wherein the apparatus includes a trench in a first dielectric material, the trench includes a lower region including the first interconnect, the trench includes an upper region, the first interconnect includes a first line, the upper region includes a second liner, the first liner is in contact with the second liner, the first liner is a conductive material, the second liner is a second dielectric material, and the second dielectric material has a different material composition than the first dielectric material.
2. The apparatus of claim 1 , wherein the second dielectric material comprises a metal element or a semiconductor element.
3. The apparatus of claim 1 , wherein the second dielectric material further comprises nitrogen and oxygen.
4. The apparatus of claim 1 , wherein the via extends into the upper region of the trench.
5. The apparatus of claim 1 , wherein the upper region of the trench includes a hardmask material, and the hardmask material has a different material composition than the second liner.
6. The apparatus of claim 5 , wherein at least a portion of the hardmask material is spaced apart from side walls of the trench by the second liner.
7. The apparatus of claim 5 , wherein a portion of the via contacts the hardmask material.
8. The apparatus of claim 1 , wherein a lower portion of the via is spaced apart from side walls of the trench by the second liner.
9. The apparatus of claim 1 , wherein a central vertical axis of the via is not aligned with a central vertical axis of the trench.
10. A method, comprising:
forming a trench in a dielectric surface;
lining the trench with a liner;
filling the trench with a metal;
recessing the metal below an opening of the trench;
converting the liner into a dielectric; and
depositing a hard mask into the trench.
11. The method of claim 10 , further comprising forming a via using the hard mask to align the via.
12. The method of claim 10 , wherein converting the liner into the dielectric comprises exposing the liner to an oxidizing plasma.
13. The method of claim 10 , wherein the liner is converted into an oxide, a silicate, or an oxynitride.
14. A computing device, comprising:
a circuit board; and
an integrated circuit disposed on the circuit board, wherein the integrated circuit comprises:
a plurality of interconnect layers, wherein the plurality of interconnect layers comprises a first interconnect layer and a second interconnect layer, wherein the first interconnect layer comprises a first interconnect, and wherein the second interconnect layer comprises a second interconnect; and
a via connecting the first interconnect and the second interconnect;
wherein the via extends into an upper portion of a trench, the first interconnect is in a lower portion of the trench, the lower portion of the trench includes a conductive liner material, and the upper portion of the trench includes a dielectric liner material.
15. The computing device of claim 14 , wherein the dielectric liner material comprises a metal element.
16. The computing device of claim 14 , wherein the upper portion of the trench includes a hardmask material, and the hardmask material has a different material composition than the dielectric liner material.
17. The computing device of claim 16 , wherein at least a portion of the hardmask material is spaced apart from side walls of the trench by the dielectric liner material.
18. The computing device of claim 16 , wherein a portion of the via is adjacent to the hardmask material.
19. The computing device of claim 14 , wherein a lower portion of the via is spaced apart from side walls of the trench by the dielectric liner material.
20. The computing device of claim 14 , wherein the conductive liner material contacts the dielectric liner material.