Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes
Acoustic resonators and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate. A back surface of the piezoelectric plate is attached to the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern including an interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on the diaphragm. A front-side dielectric layer is formed on the front surface of the piezoelectric plate between, but not over, the IDT fingers. A back-side dielectric layer is formed on a back surface of the diaphragm. Thicknesses of the IDT fingers and the front-side dielectric layer are substantially equal. An acoustic impedance Zm of the IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8Zm≤Zfd≤1.25Zm.
1. An acoustic resonator device comprising:
a substrate having a surface;
a piezoelectric layer having front and back surfaces, the back surface attached to the surface of the substrate either directly or via one or more intermediate layers, the piezoelectric layer having a portion that forms a diaphragm that is over a cavity of the acoustic resonator device;
a conductor pattern on the front surface of the piezoelectric layer, the conductor pattern including an interdigital transducer (IDT) having interleaved IDT fingers on the diaphragm; and
a front-side dielectric layer on the front surface of the piezoelectric layer and between the interleaved IDT fingers,
wherein:
a thickness of the interleaved IDT fingers and a thickness of the front-side dielectric layer are substantially equal, and
an acoustic impedance Zm of the interleaved IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8Zm≤Zfd≤1.25Zm.
2. The device of claim 1 , wherein the interleaved IDT fingers are substantially aluminum and the front-side dielectric layer is silicon oxide.
3. The device of claim 1 , wherein the interleaved IDT fingers are substantially copper and the front-side dielectric layer is Ta 2 O 5 .
4. The device of claim 1 , wherein the piezoelectric layer is lithium niobate with Euler angels of [0°, β, 0°], where 28°≤β≤32°.
5. The device of claim 4 , wherein a mark to pitch ratio of the interleaved IDT fingers is within a range from 0.24 to 0.28, and wherein the pitch is a center-to-center spacing between two adjacent interleaved IDT fingers extending from different busbars of the conductor pattern.
6. An acoustic resonator device comprising:
a substrate having a surface;
a piezoelectric layer having front and back surfaces, the back surface attached to the surface of the substrate either directly or via one or more intermediate layers, the piezoelectric layer having a diaphragm that is over a cavity;
a conductor pattern on the front surface of the piezoelectric layer, the conductor pattern including an interdigital transducer (IDT) having interleaved IDT fingers on the diaphragm;
a front-side dielectric layer on the front surface of the diaphragm and between the interleaved IDT fingers; and
a back-side dielectric layer on a back surface of the diaphragm,
wherein an acoustic thickness of the back-side dielectric layer is at least one-third and not more than two-thirds of a total acoustic thickness of the front-side dielectric layer and back-side dielectric layer combined.
7. The device of claim 1 , further comprising:
a back-side dielectric layer on a back surface of the diaphragm,
wherein:
the front-side dielectric layer and the back side dielectric layer are a same material, and
a thickness tfd of the front-side dielectric layer and a thickness tbd of the back-side dielectric layer satisfy the relationship 0.5 tfd≤tbd≤1.5 tfd.
8. The device of claim 1 , further comprising:
a back-side dielectric layer on a back surface of the diaphragm,
wherein:
the interleaved IDT fingers are substantially aluminum,
the front-side dielectric layer and the back-side dielectric layer are silicon oxide, and
a thickness of the interleaved IDT fingers, a thickness of the front-side dielectric layer, and a thickness of the back-side dielectric layer are substantially equal.
9. The device of claim 1 , further comprising a frequency setting dielectric layer over the interleaved IDT fingers and the front-side dielectric layer.
10. The device of claim 1 , further comprising a back-side dielectric layer on a back surface of the diaphragm, wherein the back-side dielectric layer covers the back surface of the piezoelectric layer and portions of the back-side dielectric layer are sandwiched between the piezoelectric layer and the substrate.
11. The device of claim 1 , wherein the diaphragm is contiguous with the piezoelectric layer around at least 50% of a perimeter of the cavity.
12. The device of claim 1 , wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic wave within the diaphragm.
13. An acoustic filter device comprising:
a plurality of bulk acoustic resonators, with at least one of the plurality of bulk acoustic resonators comprising:
a substrate having a surface;
a piezoelectric layer having front and back surfaces, the back surface attached to the surface of the substrate via one or more intermediate layers and having a portion that forms a diaphragm that is over a cavity;
a conductor pattern on the front surface of the piezoelectric layer, the conductor pattern including an interdigital transducer (IDT) that includes interleaved IDT fingers on the respective diaphragm; and
a front-side dielectric layer on the front surface of the piezoelectric layer and between the IDT finger,
wherein:
a thickness of the interleaved IDT fingers and a thickness of the front-side dielectric layer are substantially equal, and
an acoustic impedance Zm of the interleaved IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8Zm≤Zfd≤1.25Zm.
14. The filter device of claim 13 , wherein the interleaved IDT fingers are substantially aluminum and the front-side dielectric layer is silicon oxide.
15. The filter device of claim 13 , wherein the interleaved IDT fingers are substantially copper and the front-side dielectric layer is Ta 2 O 5 .
16. The filter device of claim 15 , wherein a mark to pitch ratios of the interleaved IDT fingers of the at least one bulk acoustic resonator is within a range from 0.24 to 0.28, and wherein the pitch is a center-to-center spacing between two adjacent interleaved IDT fingers extending from different busbars of the conductor pattern of the at least one bulk acoustic resonator.
17. The filter device of claim 13 , further comprising:
a back-side dielectric layer on a back surface of the diaphragm of the at least one bulk acoustic resonator,
wherein an acoustic thickness of the back-side dielectric layer is at least one-third and not more than two-thirds of a total acoustic thickness of the front-side and back-side dielectric layers of the at least one bulk acoustic resonator.
18. The filter device of claim 17 , wherein:
the front-side dielectric layer and the back side dielectric layer are the same material, and
a thickness tfd of the front-side dielectric layer and a thickness tbd of the back-side dielectric layer satisfy the relationship 0.5 tfd≤tbd≤1.5 tfd.
19. The filter device of claim 13 , further comprising a back-side dielectric layer formed on a back surface of the diaphragm of the at least one bulk acoustic resonator, wherein:
the interleaved IDT fingers are aluminum,
the front-side dielectric layer and the back-side dielectric layer are silicon oxide, and
a thickness of the interleaved IDT fingers, a thickness of the front-side dielectric layer, and a thickness of the back-side dielectric layer are substantially equal.
20. The filter device of claim 13 , further comprising a frequency setting dielectric layer over the interleaved IDT fingers and the front-side dielectric layer of at least some of the plurality of acoustic resonators.