IP Library Granted Patent US 12,532,777
Granted Patent B2
US 12,532,777 · App. 17/737,618 · Granted Jan 20, 2026

Semiconductor device package with coupled substrates

Inventors: Rohith Kamath (Bangalore, IN); Amit Vijayvargiya (Bangalore, IN); Shankara Venkatraman Gopalan (Bangalore, IN); Shankar AB (Bengaluru, IN)
Assignee: SANDISK TECHNOLOGIES, INC.
H01L25/162H01L23/49811H01L23/49827H01L23/642H01L25/165H01L23/49838
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Quick Facts
Patent No.
US 12,532,777
App. No.
17/737,618
Granted
Jan 20, 2026
Kind
B2
Abstract

A semiconductor device package includes a first substrate extending along a first central plane, and a second substrate electrically connected to the first substrate and extending along a second central plane that is substantially parallel with and offset from the first central plane of the first substrate. One or more capacitors are electrically and mechanically connected to the second substrate via one or more leads. All of the one or more capacitors are positioned at the second substrate. All of the capacitors being positioned at the second substrate, reduces the complexity of and time required to manufacture the semiconductor device package.

Claims (44)

1 . A semiconductor device package comprising:

a first substrate having a top planar surface and a bottom planar surface substantially parallel to the top planar surface, the first substrate extending along a first central plane substantially parallel with the top and bottom planar surfaces and equidistant between the top and bottom planar surfaces;

a second substrate electrically connected to the first substrate, the second substrate having a top planar surface and a bottom planar surface substantially parallel to the top planar surface, the second substrate extending along a second central plane substantially parallel with the top and bottom planar surfaces of the second substrate and equidistant between the top and bottom planar surfaces, the second central plane being substantially parallel with and offset from the first central plane of the first substrate; and

one or more capacitors electrically and mechanically connected to the second substrate via one or more leads,

wherein all of the one or more capacitors are positioned at the second substrate,

wherein each of the one or more capacitors extends circumferentially around a respective capacitor central axis, and

wherein each capacitor central axis of each of the one or more capacitors is positioned between the first central plane of the first substrate and the second central plane of the second substrate.

2 . The semiconductor device package of claim 1 further comprising:

a housing substantially enclosing the first substrate, the second substrate, and the one or more capacitors, the semiconductor device package having a width, a length, and a thickness defined by an Enterprise and Data Center Standard Form Factor (EDSFF).

3 . The semiconductor device package of claim 2 , wherein the width of the semiconductor device package is about 38.4 millimeters, the length is about 318.75 millimeters, and the thickness defined by a top surface and bottom surface of the housing is about 9.55 millimeters.

4 . The semiconductor device package of claim 2 , wherein each of the one or more capacitors is at least 0.55 millimeters from the top surface and bottom surface of the housing.

5 . The semiconductor device package of claim 1 , wherein the first substrate does not include any capacitors directly coupled to the first substrate.

6 . The semiconductor package of claim 1 ,

wherein each capacitor central axis of each of the one or more capacitors is parallel with the first central plane of the first substrate.

7 . The semiconductor device package of claim 1 , wherein the second central plane intersects each of the one or more capacitors.

8 . The semiconductor device package of claim 1 , wherein the first substrate has a first length and the second substrate has a second length that is less than the first length.

9 . The semiconductor device package of claim 8 , wherein the first length of the first substrate is twice the second length of the second substrate.

10 . The semiconductor device package of claim 1 , wherein the first substrate has a first thickness and the second substrate has a second thickness that is less than the first thickness.

11 . The semiconductor device package of claim 1 , wherein the first substrate includes a number of layers that is between two to four times greater than a number of layers included in the second substrate.

12 . A semiconductor device package comprising:

one or more capacitors;

a controller and one or more NAND dies; and

a first PCB extending along a first central plane that is substantially parallel to and equidistant from a top surface and bottom surface of the first PCB and a second PCB extending along a second central plane that is substantially parallel to and equidistant from a top surface and bottom surface of the second PCB, the second PCB electrically connected to and offset from the first PCB, the second PCB being substantially parallel to the first PCB and extending outwardly therefrom,

wherein the controller and the one or more NAND dies are directly coupled to the first PCB,

wherein each of the one or more capacitors is directly coupled to the second PCB,

wherein each of the one or more capacitors extends circumferentially around a respective capacitor central axis, and

wherein each capacitor central axis of each of the one or more capacitors is positioned between the first central plane of the first PCB and the second central plane of the second PCB.

13 . The semiconductor device package of claim 12 , wherein there are no capacitors directly connected to the first PCB.

14 . The semiconductor device package of claim 12 , wherein the one or more capacitors are the only electrical components directly connected to the second substrate.

15 . The semiconductor device package of claim 12 further comprising:

a housing substantially enclosing the first PCB, second PCB, and the one or more capacitors, the semiconductor device package having a width, a length, and a thickness defined by an Enterprise and Data Center Standard Form Factor (EDSFF).

16 . The semiconductor device package of claim 15 , wherein the width of the semiconductor device package is about 38.4 millimeters, the length is about 318.75 millimeters, and the thickness defined by a top surface and bottom surface of the housing is about 9.55 millimeters.

17 . The semiconductor device package of claim 12 , wherein the first PCB has a length that is about twice the length of the second PCB.

18 . A semiconductor device package comprising:

a first substrate means for providing electrical communication to one or more electrical components coupled to the first substrate means, the first substrate means extending along a first central plane that is substantially parallel with a top planar surface and a bottom planar surface of the first substrate means and the first central plane is equidistant between the top and bottom planar surfaces of the first substrate means;

a second substrate means for providing electrical communication to one or more electrical components coupled to the second substrate means, the second substrate means electrically and mechanically coupled to the first substrate means, the second substrate means extending along a second central plane that is substantially parallel with a top planar surface and a bottom planar surface of the second substrate means and the second central plane is equidistant between the top and bottom planar surfaces of the second substrate means; and

one or more electrical storage means each for storing an amount of electrical charge, each of the one or more electrical storage means being electrically connected to the second substrate means by a respective electrical connection means,

wherein the first and second substrate means are substantially parallel to one another and offset from one another,

wherein all of the one or more electrical storage means are positioned at the second substrate,

wherein each of the one or more electrical storage means extend circumferentially around a respective central axis, and

wherein each central axis of each of the one or more electrical storage means is positioned between the first central plane of the first substrate means and the second central plane of the second substrate means.

19 . The semiconductor device package of claim 18 , wherein the one or more electrical storage means are the only electrical components directly connected to the second substrate means that are configured to store and electrical charge.

20 . The semiconductor device package of claim 18 further comprising:

a housing means for substantially enclosing the first substrate means, the second substrate means, and the one or more electrical storage means, the semiconductor device package having a length, width, and thickness as defined by an Enterprise and Data Center Standard Form Factor (EDSFF).

Assignments (8)
PARTIAL RELEASE OF SECURITY INTERESTS Recorded Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →
SECURITY AGREEMENT Recorded Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →
PATENT COLLATERAL AGREEMENT Recorded Aug 23, 2024
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS THE AGENT
Reel/Frame 068762/0494 →
CHANGE OF NAME Recorded Jun 27, 2024
From: SANDISK TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067982/0032 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2024
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067567/0682 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 18, 2022
From: VIJAYVARGIYA, AMIT; KAMATH, ROHITH; GOPALAN, SHANKARA VENKATRAMAN; AB, SHANKAR
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 059942/0083 →
Continuity (1)
Related Publication 20230361093A1 · Nov 9, 2023
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