Field effect transistor with multiple hybrid fin structure and method
View Patent ↗A device includes a substrate, first and second gate structures, first and second hybrid fins, and first and second sidewalls. The first gate structure is over and surrounds a first vertical stack of nanostructures. The second gate structure is over and surrounds a second vertical stack of nanostructures. The second gate structure and the first gate structure extend along a first direction, and are laterally separated from each other in a second direction, the second direction being substantially perpendicular to the first direction. The first hybrid fin extends through and under the first gate structure and the second gate structure, the extending being along the second direction. The second hybrid fin is between the first gate structure and the second gate structure. The second hybrid fin has: a first sidewall that abuts the first gate structure; and a second sidewall that abuts the second gate structure.
1 . A device, comprising:
a substrate;
a first gate structure over and surrounding a first vertical stack of nanostructures;
a second gate structure over and surrounding a second vertical stack of nanostructures, wherein the second gate structure and the first gate structure extend along a first direction, and are laterally separated from each other in a second direction, the second direction being substantially perpendicular to the first direction;
a first hybrid fin extending through and under the first gate structure and the second gate structure, the extending being along the second direction; and
a second hybrid fin between the first gate structure and the second gate structure, the second hybrid fin having:
a first sidewall that abuts the first gate structure; and
a second sidewall that abuts the second gate structure,
wherein the second hybrid fin is a separate layer from the first hybrid fin.
2 . The device of claim 1 , further comprising:
an isolation structure extending along the second direction;
wherein lateral sidewalls of the first hybrid fin abut the isolation structure.
3 . The device of claim 2 , wherein the first hybrid fin extends vertically to have an upper surface substantially level with an upper surface of uppermost nanostructures of the first and second vertical stacks of nanostructures.
4 . The device of claim 1 , wherein the second hybrid fin extends vertically to have an upper surface above an upper surface of uppermost nanostructures of the first and second vertical stacks of nanostructures.
5 . The device of claim 1 , wherein the second hybrid fin comprises:
a first liner layer;
a second liner layer on the first liner layer;
a core layer on the second liner layer; and
a capping layer on the core layer.
6 . The device of claim 5 , wherein the capping layer contacts the core layer, the first liner layer, and the second liner layer.
7 . A device comprising:
a substrate;
a first vertical stack of nanostructures over the substrate;
a second vertical stack of nanostructures offset from the first vertical stack in a first direction;
a gate structure over and wrapping around the first vertical stack of nanostructures;
a first source/drain region abutting the first vertical stack of nanostructures in a second direction, the second direction being substantially perpendicular to the first direction;
a second source/drain region abutting the second vertical stack of nanostructures in the second direction;
a first hybrid fin between the first vertical stack and the second vertical stack, the first hybrid fin extending in the second direction;
a first second hybrid fin between the first source/drain region and the first hybrid fin; and
a second second hybrid fin between the second source/drain region and the first hybrid fin, wherein a bottom of the first hybrid fin is vertically offset from bottoms of the second and second second hybrid fins.
8 . The device of claim 7 , further comprising:
an isolation structure between the first vertical stack and the second vertical stack, the isolation structure extending in the second direction;
wherein the isolation structure abuts lateral sidewalls of the first hybrid fin, and abuts bottoms of the first second and second second hybrid fins.
9 . The device of claim 7 , further comprising:
a source/drain contact in contact with the first source/drain region and the second source/drain region.
10 . The device of claim 9 , further comprising:
a source/drain contact isolation structure extending through the source/drain contact, the source/drain contact isolation structure being in contact with the first, first second and second second hybrid fins.
11 . The device of claim 7 , wherein:
the first second hybrid fin contacts the first source/drain region; and
the second second hybrid fin contacts the second source/drain region.
12 . The device of claim 7 , wherein the first hybrid fin is spaced from the first source/drain region by a distance in a range of about 20 nanometers to about 30 nanometers.
13 . A device, comprising:
a substrate;
a first vertical stack of nanostructures over the substrate;
a second vertical stack of nanostructures over the substrate and offset from the first vertical stack in a first direction;
an isolation structure between the first vertical stack of nanostructures and the second vertical stack of nanostructures;
a first gate structure over and wrapping around the first vertical stack of nanostructures;
a second gate structure over and wrapping around the second vertical stack of nanostructures;
a first hybrid fin extending along a second direction, the second direction being substantially perpendicular to the first direction, between the first and second vertical stacks, wherein the first hybrid fin extends under and through the first and second gate structures, the first hybrid fin at least partially in the isolation structure;
a first second hybrid fin disposed between the first vertical stack and the first hybrid fin, the first second hybrid fin extending along the first direction and not extending under the first gate structure, the first second hybrid fin over the isolation structure;
a second second hybrid fin disposed between the second vertical stack and the first hybrid fin, the second second hybrid fin extending along the first direction and not extending under the second gate structure, the second second hybrid fin over the isolation structure, the first second hybrid fin and the second second hybrid fin being a separate layer from the first hybrid fin.
14 . The device of claim 13 , wherein the first hybrid fin comprises:
a liner layer over an isolation structure;
a core layer over the liner layer;
a capping layer over the core layer.
15 . The device of claim 14 , wherein the capping layer contacts the liner layer and the core layer.
16 . The device of claim 13 , wherein each of the first second and second second hybrid fins comprises:
a first liner layer;
a second liner layer over the first liner layer;
a core layer over the second liner layer;
a capping layer over the core layer.
17 . The device of claim 16 , wherein the capping layer contacts the core layer, the first liner layer, and the second liner layer.
18 . The device of claim 13 , wherein the first hybrid fin extends vertically below the first second and second second hybrid fins.
19 . The device of claim 13 , further comprising:
source/drain regions adjacent to the first and second vertical stacks of nanostructures along the second direction;
wherein the first second and second second hybrid fins are disposed between the source/drain regions and the first hybrid fin.
20 . The device of claim 7 , wherein the first second hybrid fin and the second second hybrid fin are each a different layer from the first hybrid fin.