Hybrid terabytes written (TBW) storage systems
In one example, a flash storage device includes a flash memory and a controller. The flash memory includes non-volatile memory cells organized into blocks. The blocks are switchable between multi-bit mode and single-bit mode for storing data. The blocks in single-bit mode have a lower storage density and a higher write endurance than the blocks in multi-bit mode. The controller is configured to receive a write request from a host, and to determine whether a trigger event has occurred to switch one or more of the blocks from multi-bit mode to single-bit mode. Based on the controller determining that the trigger event has occurred, the controller is further configured to switch the one or more blocks from multi-bit mode to single bit mode, and to store, in single-bit mode, data for the write request in the one or more blocks at the lower data storage density.
1. A flash storage device, comprising:
a flash memory having non-volatile memory cells organized into blocks, wherein the blocks are switchable between a multi-bit mode for storing data in the non-volatile memory cells and a single-bit mode for storing the data in the non-volatile memory cells, wherein the blocks in the single-bit mode have a lower data storage density and a higher write endurance than the blocks in the multi-bit mode; and
a controller communicatively coupled to the flash memory, the controller configured to:
receive a write request from a host;
based, at least in part, on receiving the write request, determine whether a trigger event has occurred to switch one or more blocks from the multi-bit mode to the single-bit mode; and
based, at least in part, on the controller determining the trigger event has occurred:
switch the one or more blocks from the multi-bit mode to the single-bit mode;
store, in the single-bit mode, data associated with the write request in the one or more blocks at the lower data storage density;
calculate a new terabyte written (TBW) rating of the flash storage device based, at least in part, on the lower data storage density and the higher write endurance of the one or more blocks when in the single-bit mode; and
notify the host of the new TBW rating of the flash storage device.
2. The flash storage device of claim 1 , wherein the trigger event comprises receiving, by the controller, a command from the host to switch the one or more blocks from the multi-bit mode to the single-bit mode.
3. The flash storage device of claim 1 , wherein the trigger event comprises determining, by the controller, that a number of program/erase (P/E) cycles of the one or more blocks is greater than a threshold number of P/E cycles.
4. The flash storage device of claim 1 , wherein the trigger event comprises determining, by the controller, that an amount of data written to the flash storage device is greater than a threshold amount of data.
5. The flash storage device of claim 1 , wherein the controller is further configured to:
calculate a new storage capacity of the flash storage device based, at least in part, on the lower data storage density of the one or more blocks when in the single-bit mode; and
notify the host of the new storage capacity.
6. The flash storage device of claim 1 , wherein the trigger event comprises determining, by the controller, that an error rate of the flash storage device is greater than a threshold error rate.
7. The flash storage device of claim 1 , wherein switching the one or more blocks from the multi-bit mode to the single-bit mode comprises reducing an amount overprovisioned blocks of the flash storage device.
8. A method of dynamically switching memory blocks of a storage device from a multi-bit mode to a single-bit mode for storing data in non-volatile memory cells of the memory blocks, comprising:
receiving a write request from a host;
based, at least in part, on receiving the write request, determining whether a trigger event has occurred to switch one or more of the memory blocks from the multi-bit mode to the single-bit mode, wherein the one or more memory blocks in the single-bit mode have a lower data storage density and a higher write endurance than the one or more memory blocks in the multi-bit mode;
based, at least in part, on determining that the trigger event has occurred:
switching the one or more memory blocks from the multi-bit mode to the single-bit mode;
storing, in the single-bit mode, data associated with the write request in the one or more memory blocks at the lower data storage density;
calculating a new terabyte written (TBW) rating of the flash storage device based, at least in part, on the lower data storage density and the higher write endurance of the one or more memory blocks when in the single-bit mode; and
notifying the host of the new TBW rating of the flash storage device.
9. The method of claim 8 , further comprising receiving a command from the host to switch the one or more memory blocks from the multi-bit mode to the single-bit mode based, at least in part, on determining the trigger event has occurred.
10. The method of claim 8 , wherein determining the trigger event has occurred comprises determining that a number of program/erase (P/E) cycles of the one or more memory blocks is greater than a threshold number of P/E cycles.
11. The method of claim 8 , wherein determining the trigger event has occurred comprises determining that an amount of data written to the flash storage device is greater than a threshold amount of data.
12. The method of claim 8 , wherein switching the one or more memory blocks from the multi-bit mode to the single-bit mode comprises reducing an amount of overprovisioned memory blocks of the flash storage device.
13. The method of claim 8 , further comprising:
calculating a new storage capacity of the flash storage device based, at least in part, on the lower data storage density of the one or more memory blocks when in the single-bit mode; and
notifying the host of the new storage capacity.
14. The method of claim 8 , wherein determining that the trigger event has occurred comprises determining that an error rate of the flash storage device is greater than a threshold error rate.
15. A flash storage device, comprising:
a flash memory having non-volatile memory cells organized into blocks, wherein the blocks are switchable between a multi-bit mode for storing data in the non-volatile memory cells and a single-bit mode for storing the data in the non-volatile memory cells, wherein the blocks in the single-bit mode have a lower data storage density and a higher write endurance than the blocks in the multi-bit mode;
means for monitoring an amount of data written to the blocks of the flash memory;
means for receiving a command;
based, at least in part, on receiving the command, means for determining whether the amount of data written to the blocks is greater than a threshold amount of data;
based, at least in part, on determining that the amount of data written to the blocks is greater than the threshold amount of data, means for notifying a host of an option to switch one or more of the blocks from the multi-bit mode to the single-bit mode for storing data at the flash storage device;
means for calculating a new terabyte written (TBW) rating of the flash storage device based, at least in part, on the one or more blocks being switched from the multi-bit mode to the single-bit mode; and
means for notifying the host of the new TBW rating of the flash storage device.
16. The flash storage device of claim 15 , further comprising:
means for receiving a command from the host to switch the one or more blocks from the multi-bit mode to the single-bit mode; and
based, at least in part on receiving the command, means for switching the one or more blocks from the multi-bit mode to the single-bit mode for storing the data at the flash storage device.
17. The flash storage device of claim 16 , further comprising:
means for calculating a new storage capacity of the flash storage device based, at least in part, on the lower data storage density of the one or more blocks when in the single-bit mode; and
means for notifying the host of the new storage capacity.
18. The flash storage device of claim 15 , further comprising:
means for monitoring a number of program/erase (P/E) cycles for the blocks;
means for determining if the number of P/E cycles is greater than a threshold number of P/E cycles; and
based, at least in part, on determining that the number of P/E cycles is greater than the threshold number of P/E cycles, means for notifying the host of the option to switch the one or more blocks from the multi-bit mode to the single-bit mode for storing the data at the flash storage device.
19. The flash storage device of claim 15 , further comprising:
means for monitoring an error rate of the blocks;
means for determining if the error rate of the blocks is greater than a threshold error rate; and
based, at least in part, on determining that the error rate is greater than the threshold error rate, means for notifying the host of the option to switch the one or more blocks from the multi-bit mode to the single-bit mode for storing data at the flash storage device.
20. The flash storage device of claim 15 , further comprising means for reducing an amount of overprovisioned blocks of the flash storage device.