Plasma processing apparatus and plasma processing method using the same
A plasma processing apparatus is provided. The plasma processing apparatus includes a chamber having a processing space defined therein in which plasma is generated; and a plasma generation unit configured to excite gas in the processing space into a plasma state, wherein the plasma generation unit includes: a first power supply to supply power for generation of the plasma; a coil connected to the first power supply; a first shunt capacitor disposed between and connected to a first node of the coil and a ground; and a second shunt capacitor disposed between and connected to a second node other than the first node of the coil and the ground.
1. A plasma processing apparatus comprising:
a chamber having a processing space defined therein in which plasma is generated; and
a plasma generation unit configured to excite gas in the processing space into a plasma state,
wherein the plasma generation unit includes:
a first power supply to supply power for generation of the plasma;
a coil connected to the first power supply;
a first shunt capacitor connected between a first node of the coil and a ground; and
a second shunt capacitor connected between a second node other than the first node of the coil and the ground,
wherein:
the coil comprises a first partial coil and a second partial coil connected in series to each other,
one end of the first partial coil is connected to the first power supply and another end of the first partial coil is connected to the first node of the coil connected to the first shunt capacitor, and
one end of the second partial coil is connected to the first node of the coil connected to the first shunt capacitor and another end of the second partial coil is connected to the second node of the coil connected to the second shunt capacitor.
2. The plasma processing apparatus of claim 1 , wherein the apparatus is configured to control a capacitance value of each of the first and second shunt capacitors to adjust a current of the coil.
3. The plasma processing apparatus of claim 1 , wherein the apparatus is configured to adjust a current of the coil to control a density of the plasma.
4. The plasma processing apparatus of claim 1 , wherein each of the first and second shunt capacitors includes a variable capacitor.
5. The plasma processing apparatus of claim 1 , wherein the first node is interposed between the first partial coil and the second partial coil,
wherein the apparatus is configured to control a capacitance value of the first shunt capacitor to adjust currents of the first and second partial coils.
6. The plasma processing apparatus of claim 5 , wherein the coil is further divided into a third partial coil connected in series with the second partial coil while the second node is interposed therebetween,
wherein the apparatus is configured to control a capacitance value of the second shunt capacitor to adjust currents of the second and third partial coils.
7. The plasma processing apparatus of claim 6 , wherein the plasma generation unit further includes a third shunt capacitor disposed between and connected to a third node other than the second node of the coil and the ground,
wherein the coil is further divided into a fourth partial coil connected in series with the third partial coil while the third node is interposed therebetween,
wherein the apparatus is configured to control a capacitance value of the third shunt capacitor to adjust currents of the third and fourth partial coils.
8. The plasma processing apparatus of claim 7 , wherein the plasma generation unit further includes a fourth capacitor disposed between and connected to a fourth node other than the third node of the coil and the ground,
wherein the apparatus is configured to control a capacitance value of the fourth capacitor to adjust a voltage of the coil.
9. The plasma processing apparatus of claim 1 , wherein the coil includes:
a first coil portion having one end connected to the first power supply, wherein the first coil portion is divided into first and second areas; and
a second coil portion disposed below the first coil portion and connected to the other end of the first coil portion, wherein the second coil portion is divided into third and fourth areas,
wherein each of the first area and the third area constitutes one side half of each of the first and second coil portions while the first area and the third area face vertically each other,
wherein each of the second area and the fourth area constitutes the other side half of each of the first and second coil portions while the second area and the fourth area face vertically each other,
wherein the apparatus is configured to control capacitance values of the first and third shunt capacitors to adjust currents of the first and fourth areas.
10. A plasma processing apparatus comprising:
a chamber having a processing space defined therein in which plasma is generated; and
a plasma generation unit configured to excite gas in the processing space into a plasma state,
wherein the plasma generation unit includes:
a first power supply to supply power for generation of the plasma;
a first coil portion having one end connected to the first power supply, wherein the first coil portion is divided into first and second areas;
a second coil portion disposed under the first coil portion, and connected to the other end of the first coil portion, wherein the second coil portion is divided into third and fourth areas; and
first to third shunt capacitors and a fourth capacitor connected between the first to fourth areas and a ground, respectively.
11. The plasma processing apparatus of claim 10 , wherein each of the first area and the third area constitutes one side half of each of the first and second coil portions while the first area and the third area face vertically each other,
wherein each of the second area and the fourth area constitutes the other side half of each of the first and second coil portions while the second area and the fourth area face vertically each other.
12. The plasma processing apparatus of claim 10 , wherein the apparatus is configured to control capacitance values of the first and third shunt capacitors to adjust currents of the first and fourth areas.
13. The plasma processing apparatus of claim 12 , wherein the apparatus is configured to adjust currents of the first and fourth areas to control a density of the plasma.