Adhesive for semiconductor, production method therefor, and semiconductor device and production method therefor

1. An adhesive for semiconductors, the adhesive comprising:

a thermoplastic resin;

a thermosetting resin;

a curing agent having a reactive group; and

a flux compound having a carboxyl group,

wherein the adhesive has a calorific value of 20 J/g or less at 60° C. to 155° C. on a DSC curve when the DSC curve is obtained by differential scanning calorimetry involving heating the adhesive at a rate of temperature increase of 10° C./min.

2. The adhesive for semiconductors according to claim 1 , wherein the thermoplastic resin has a weight average molecular weight of 10000 or more.

3. The adhesive for semiconductors according to claim 1 , wherein a content of the thermoplastic resin is 1% to 30% by mass based on a total amount of solid contents of the adhesive.

4. The adhesive for semiconductors according to claim 1 , wherein the curing agent comprises an amine-based curing agent.

5. The adhesive for semiconductors according to claim 1 , wherein the curing agent comprises an imidazole-based curing agent.

6. The adhesive for semiconductors according to claim 1 ,

wherein a content of the curing agent is 2.3% by mass or less based on a total amount of solid contents of the adhesive.

7. The adhesive for semiconductors according to claim 1 , wherein the flux compound has a melting point of 25° C. to 230° C.

8. The adhesive for semiconductors according to claim 1 , wherein the thermosetting resin comprises an epoxy resin.

9. The adhesive for semiconductors according to claim 1 ,

wherein the thermosetting resin substantially does not comprise a liquid state epoxy resin at 35° C.

10. The adhesive for semiconductors according to claim 1 ,

wherein the adhesive is in a film form.

11. The adhesive for semiconductors according to claim 1 , wherein the adhesive has a minimum melt viscosity of 400 to 2500 Pa·s.

12. A method for producing a semiconductor device, the semiconductor device comprising a plurality of semiconductor chips and a wiring circuit board with respective connection parts thereof being electrically connected to each other,

the method comprising:

a step of disposing the wiring circuit board having a connection part on a stage;

a temporary fixing step of sequentially disposing the plurality of semiconductor chips, each having a connection part, on the wiring circuit board disposed on the stage, with the adhesive for semiconductors according to claim 1 interposed therebetween, while heating the stage at a temperature of from 60° C. to 155° C., and obtaining a laminated body having the adhesive for semiconductors laminated between the wiring circuit board and the plurality of the semiconductor chips; and

a sealing step of bonding the respective connection parts to electrically connect to each other and curing the adhesive for semiconductors by applying heat, to seal at least one of the connection parts with the cured adhesive.

13. A method for producing a semiconductor device, the semiconductor device comprising a plurality of semiconductor chips with respective connection parts thereof being electrically connected to each other, the method comprising:

a step of disposing the plurality of semiconductor chips on a stage;

a temporary fixing step of sequentially disposing another semiconductor chip on each of the semiconductor chips disposed on the stage, with the adhesive for semiconductors according to claim 1 interposed therebetween, while heating the stage at a temperature of from 60° C. to 155° C., and obtaining a plurality of laminated bodies each having the adhesive for semiconductors laminated between one of the semiconductor chips and the other semiconductor chip; and

a sealing step of bonding the respective connection parts to electrically connect to each other and curing the adhesive for semiconductors by applying heat, to seal at least one of the connection parts with the cured adhesive.

14. A method for producing a semiconductor device, the semiconductor device comprising a plurality of semiconductor chips and a semiconductor wafer with respective connection parts thereof being electrically connected to each other, the method comprising:

a step of disposing the semiconductor wafer having a connection part on a stage;

a temporary fixing step of sequentially disposing the plurality of semiconductor chips, each having a connection part, on the semiconductor wafer disposed on the stage, with the adhesive for semiconductors according to claim 1 interposed therebetween, while heating the stage at a temperature of from 60° C. to 155° C., and obtaining a laminated body having the adhesive for semiconductors laminated between the semiconductor wafer and the plurality of the semiconductor chips; and

a sealing step of bonding the respective connection parts to electrically connect to each other and curing the adhesive for semiconductors by applying heat, to seal at least one of the connection parts with the cured adhesive.

15. A semiconductor device comprising:

a semiconductor chip having a first connection part; and

a wiring circuit board having a second connection part,

the first connection part of the semiconductor chip and the second connection part of the wiring circuit board being electrically connected to each other,

wherein at least one of the first and second connection parts is sealed by a cured product of the adhesive for semiconductors according to claim 1 .

16. A semiconductor device comprising:

a plurality of semiconductor chips including a first semiconductor chip having a first connection part, and a second semiconductor chip having a second connection part, wherein the first connection part is electrically connected to the second connection part; and

a cured product of the adhesive for semiconductors according to claim 1 which seals at least one of the first and second connection parts.

17. The adhesive for semiconductors according to claim 1 , wherein the adhesive has an onset temperature of 158° C. or higher as determined by the differential scanning calorimetry.